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magnetic flux
magnetic flux

... Therefore, this motion of the loop is to be opposed. So, the current is setting itself such that by Fleming’s Left Hand Rule, the conductor arm PS experiences force to the right whereas the loop is trying to move to the left. Against this force, mechanical work is done which is converted into electr ...
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... e.g., y1 for Dy glasses in Table 3) can, in some cases, be a consequence of a small number of the clusters. When T-0; but condition (6) is still fulfilled, even a small amount of the single ions can make a substantial contribution to the magnetization (see Eq. (4)). Therefore, the total reciprocal ma ...
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... recognizes since 1920’s that magneto caloric materials can be used for cooling purposes. In the laboratory magnetic refrigeration using paramagnetic salts is a standard technique for obtaining ultra-low temperatures .However, for the purpose of using magnetic refrigeration near room temperature seve ...
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... the trap and the absorption of blackbody radiation. The microwave transitions we propose will tend to decrease the negative effect of collisions. For example, every time the H goes through the positron plasma the most likely process is ᐉ , m changing collisions or charge exchange. If the H is in a l ...
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Giant magnetoresistance



Giant magnetoresistance (GMR) is a quantum mechanical magnetoresistance effect observed in thin-film structures composed of alternating ferromagnetic and non-magnetic conductive layers. The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg for the discovery of GMR.The effect is observed as a significant change in the electrical resistance depending on whether the magnetization of adjacent ferromagnetic layers are in a parallel or an antiparallel alignment. The overall resistance is relatively low for parallel alignment and relatively high for antiparallel alignment. The magnetization direction can be controlled, for example, by applying an external magnetic field. The effect is based on the dependence of electron scattering on the spin orientation.The main application of GMR is magnetic field sensors, which are used to read data in hard disk drives, biosensors, microelectromechanical systems (MEMS) and other devices. GMR multilayer structures are also used in magnetoresistive random-access memory (MRAM) as cells that store one bit of information.In literature, the term giant magnetoresistance is sometimes confused with colossal magnetoresistance of ferromagnetic and antiferromagnetic semiconductors, which is not related to the multilayer structure.
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