Download SIPMOS Small-Signal-Transistor BSS169

BSS169
SIPMOS® Small-Signal-Transistor
Product Summary
Features
• N-channel
• Depletion mode
VDS
100
V
RDS(on),max
12
Ω
0.09
A
IDSS,min
• dv /dt rated
• Available with V GS(th) indicator on reel
• Pb-free lead-plating; RoHS compliant
PG-SOT-23
• Halogen-free according to AEC61249-2-21
BDTIC
• Qualified according to AEC Q101
Type
Package
Pb-free
Tape and Reel Information
Marking
BSS169
PG-SOT-23
Yes
H6327: 3000 pcs/reel
SFs
BSS169
PG-SOT-23
Yes
1)
H6906: 3000 pcs/reel sorted in VGS(th) bands1)
SFs
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T A=25 °C
0.17
T A=70 °C
0.14
0.68
Pulsed drain current
I D,pulse
T A=25 °C
Reverse diode dv /dt
dv /dt
I D=0.17 A, V DS=80 V,
di /dt =200 A/µs,
T j,max=150 °C
Gate source voltage
V GS
ESD Class
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
IEC climatic category; DIN IEC 68-1
1)
6
±20
JESD22-A114-HBM
Power dissipation
Value
Unit
A
kV/µs
V
Class 0
0.36
W
-55 ... 150
°C
55/150/56
see table on next page and diagram 11
Rev. 1.8
page 1
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BSS169
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
350
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
BDTIC
Drain-source breakdown voltage
V (BR)DSS V GS=-10 V, I D=250 µA
Gate threshold voltage
V GS(th)
V DS=3 V, I D=50 µA
Drain-source cutoff current
I D(off)
100
-
-
-2.9
-2.2
-1.8
V DS=100 V,
V GS=-10 V, T j=25 °C
-
-
0.1
V DS=100 V,
V GS=-10 V, T j=125 °C
-
-
10
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
10
nA
On-state drain current
I DSS
V GS=0 V, V DS=10 V
90
-
-
mA
Drain-source on-state resistance
R DS(on)
V GS=0 V, I D=0.05 A
-
5.3
12
V GS=10 V, I D=0.17 A
-
2.9
6
|V DS|>2|I D|R DS(on)max,
I D=0.14 A
0.10
0.19
-
S
-2
-
-1.8
V
K
-2.15
-
-1.95
L
-2.3
-
-2.1
M
-2.45
-
-2.25
N
-2.6
-
-2.4
Transconductance
g fs
Ω
Threshold voltage V GS(th) sorted in bands2)
J
2)
V GS(th)
V DS=3 V, I D=50 µA
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.8
page 2
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BSS169
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
51
68
-
9
13
Dynamic characteristics
pF
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
4
7
Turn-on delay time
t d(on)
-
2.9
4.2
Rise time
tr
-
2.7
4.0
Turn-off delay time
t d(off)
-
11
17
Fall time
tf
-
27
40
Gate to source charge
Q gs
-
0.12
0.16
Gate to drain charge
Q gd
-
0.9
1.4
Gate charge total
Qg
-
2.1
2.8
Gate plateau voltage
V plateau
-
-0.43
-
V
-
-
0.17
A
-
-
0.68
-
0.79
1.2
V
-
20.5
25.6
ns
-
9.7
12.1
nC
V GS=-10 V, V DS=25 V,
f =1 MHz
V DD=50 V,
V GS=-3…7 V,
I D=0.12 A, R G=6 Ω
ns
BDTIC
Gate Charge Characteristics
V DD=80 V, I D=0.12 A,
V GS=-3 to 7 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev. 1.8
T A=25 °C
V GS=-10 V, I F=0.17 A,
T j=25 °C
V R=50 V, I F=0.12 A,
di F/dt =100 A/µs
page 3
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BSS169
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.4
0.2
0.16
0.3
Ptot [W]
0.12
ID [A]
BDTIC
0.2
0.08
0.1
0.04
0
0
0
40
80
120
160
0
40
80
TA [°C]
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
103
limited by on-state
resistance
0.5
100
10 µs
100 µs
102
10 ms
10-1
0.2
ZthJA [K/W]
ID [A]
1 ms
0.1
0.05
0.02
101
10-2
single pulse
DC
10-3
100
100
101
102
103
VDS [V]
Rev. 1.8
0.01
10-4
10-3
10-2
10-1
100
101
102
tp [s]
page 4
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BSS169
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
0.5
-0.2 V
14
0V
0.2 V
-0.1 V 0.1 V
1V
0.5 V
10 V
12
0.4
0.5 V
10
RDS(on) [Ω]
0.3
0.2 V
ID [A]
BDTIC
0.1 V
0V
-0.1 V
0.2
8
1V
6
-0.2 V
4
10 V
0.1
2
0
0
0
2
4
6
8
0
10
0.1
0.2
0.3
VDS [V]
0.4
0.5
0.40
0.50
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.4
0.5
0.35
0.4
0.3
0.25
ID [A]
gfs [S]
0.3
0.2
0.2
0.15
0.1
0.1
0.05
0
-2
-1
0
1
2
VGS [V]
Rev. 1.8
0
0.00
0.10
0.20
0.30
ID [A]
page 5
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BSS169
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.05 A; V GS=0 V
V GS(th)=f(T j); V DS=3 V; I D=50 µA
24
-1.1
20
-1.5
16
-1.9
VGS(th) [V]
RDS(on) [Ω]
parameter: I D
98 %
98 %
typ
BDTIC
12
8
-2.3
-2.7
typ
2%
4
-3.1
0
-3.5
-60
-20
20
60
100
140
180
-60
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
11 Threshold voltage bands
12 Typ. capacitances
I D=f(V GS); V DS=3 V; T j=25 °C
C =f(V DS); V GS=-10 V; f =1 MHz
10
103
1
102
ID [mA]
Ciss
M
L
K
J
C [pF]
N
0.1
Coss
101
50 µA
100
0.01
-3
-2.5
-2
-1.5
-1
VGS [V]
Rev. 1.8
Crss
0
10
20
30
VDS [V]
page 6
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BSS169
13 Forward characteristics of reverse diode
15 Typ. gate charge
I F=f(V SD)
V GS=f(Q gate); I D=0.12 A pulsed
parameter: T j
parameter: V DD
100
8
0.5 VDS(max)
25 °C
150 °C
6
150 °C, 98%
0.2 VDS(max)
25 °C, 98%
10-1
0.8 VDS(max)
VGS [V]
4
BDTIC
IF [A]
10-2
2
0
10-3
-2
10-4
-4
0
0.5
1
1.5
VSD [V]
0
0.5
1
1.5
2
2.5
Qgate [nC]
16 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
VBR(DSS) [V]
120
100
80
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.8
page 7
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BSS169
Package Outline:
BDTIC
Footprint:
Packaging:
Dimensions in mm
Rev. 1.8
page 8
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BSS169
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.8
page 9
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