Download OptiMOS Small-Signal-Transistor 2N7002DW

2N7002DW
OptiMOS™ Small-Signal-Transistor
Product Summary
Features
VDS
• Dual N-channel
RDS(on),max
• Enhancement mode
• Logic level
• Avalanche rated
60
V
VGS=10 V
3
W
VGS=4.5 V
4
ID
0.3
A
• Fast switching
• Qualified according to AEC Q101
BDTIC
PG-SOT363
• 100% lead-free; RoHS compliant
6
5
4
• Halogen-free according to IEC61249-2-21
1
2
Type
Package
Tape and Reel Information
2N7002DW
PG-SOT363 H6327: 3000 pcs/reel
Parameter 1)
Symbol Conditions
Continuous drain current
ID
Marking
HalogenFree
Packing
X8s
Yes
Non Dry
Value
T A=25 °C
0.30
T A=70 °C
0.24
Pulsed drain current
I D,pulse
T A=25 °C
1.2
Avalanche energy, single pulse
E AS
I D=0.3 A, R GS=25 W
1.3
Reverse diode dv /dt
dv /dt
I D=0.3 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
ESD class
±20
JESD22-A114 (HBM)
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
IEC climatic category; DIN IEC 68-1
1)
3
Unit
A
mJ
kV/µs
V
class 0 (<250V)
0.5
W
-55 ... 150
°C
55/150/56
Remark: one of both transistors in operation.
Rev.2.3
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page 1
2014-09-19
2N7002DW
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - minimal footprint2)
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
BDTIC
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D=250 µA
60
-
-
Gate threshold voltage
V GS(th)
V DS=VGS, I D=250 µA
1.5
2.1
2.5
Drain-source leakage current
I D (off)
V DS=60 V, V GS=-10 V,
T j=25 °C
-
-
0.1
V DS=60 V,
V GS=0 V, T j=150 °C
-
-
5
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
10
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=0.25 A
-
2.0
4
W
V GS=10 V, I D=0.5 A
-
1.6
3
|V DS|>2|I D|R DS(on)max,
I D=0.24 A
0.2
0.36
-
Transconductance
g fs
S
2)
Perfomed on a 40x40mm2 FR4 PCB with both sided Cu sense-force traces, each 1mm wide, 70μm thick and 20mm
long.
Rev.2.3
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page 2
2014-09-19
2N7002DW
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
13
20
-
4.1
6
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
2.0
3
Turn-on delay time
t d(on)
-
3.0
4.5
Rise time
tr
-
3.3
5
Turn-off delay time
t d(off)
-
5.5
9
Fall time
tf
-
3.1
5
Gate to source charge
Q gs
-
0.05
0.1
Gate to drain charge
Q gd
-
0.2
0.4
Gate charge total
Qg
-
0.4
0.6
Gate plateau voltage
V plateau
-
4.0
-
V
-
-
0.3
A
-
-
1.2
-
0.96
1.2
V
-
8.5
13
ns
-
2.4
4
nC
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=0.5 A, R G,ext=6 W
pF
ns
BDTIC
Gate Charge Characteristics
V DD=48 V, I D=0.5 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev.2.3
T A=25 °C
V GS=0 V, I F=0.5 A,
T j=25 °C
V R=30 V, I F=0.5 A,
di F/dt =100 A/µs
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2014-09-19
2N7002DW
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.35
0.5
0.3
Ptot [W]
0.4
0.25
0.2
0.3
ID [A]
BDTIC
0.15
0.2
0.1
0.1
0.05
0
0
0
40
80
120
160
0
40
80
TA [°C]
120
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
103
limited by on-state
resistance
1 µs
100
0.5
10 µs
102
0.2
ZthJA [K/W]
ID [A]
100 µs
1 ms
10-1
10 ms
0.1
0.05
0.02
single pulse
0.01
101
DC
10-2
10-3
100
1
10
100
VDS [V]
Rev.2.3
10-5
10-4
10-3
10-2
10-1
100
101
102
103
tp [s]
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2014-09-19
2N7002DW
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
6
0.6
5V
7V
10 V
0.5
5
4.5 V
2.9 V
4V
3.2 V
3.5 V
4V
4
RDS(on) [W]
0.4
ID [A]
BDTIC
0.3
3.5 V
3
4.5 V
5V
2
0.2
7V
10 V
3.2 V
1
0.1
2.9 V
0
0
0
1
2
3
4
0
5
0.1
VDS [V]
0.2
0.3
0.4
0.5
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
0.6
0.5
0.45
0.5
0.4
0.35
0.4
gfs [S]
ID [A]
0.3
0.3
0.25
0.2
0.2
0.15
0.1
0.1
0.05
0
0
1
2
3
4
5
VGS [V]
Rev.2.3
0
0.00
0.10
0.20
0.30
0.40
ID [A]
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page 5
2014-09-19
2N7002DW
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.3 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=250 µA
parameter: I D
6.0
3.2
2.8
5.0
98 %
2.4
4.0
VGS(th) [V]
RDS(on) [W]
2
98 %
typ
BDTIC
3.0
1.6
2%
1.2
2.0
typ
0.8
1.0
0.4
0.0
0
-60
-20
20
60
100
140
-60
-20
20
Tj [°C]
60
100
140
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
102
150 °C, 98%
100
150 °C
Ciss
IF [A]
C [pF]
25 °C
101
Coss
25 °C, 98%
10-1
10-2
Crss
100
10-3
0
10
20
30
VDS [V]
Rev.2.3
0
0.4
0.8
1.2
1.6
VSD [V]
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2014-09-19
2N7002DW
13Avalanche characteristics
14 Typ. gate charge
I AS =f(t AV ); R GS =25 Ω
V GS=f(Q gate); I D=0.5 A pulsed
parameter: TJ(start)
parameter: V DD
100
10
9
8
10-1
30 V
25 °C
7
100 °C
12 V
125 °C
VGS [V]
IAV [A]
6
48 V
BDTIC
10-2
5
4
3
10-3
100
101
102
103
2
1
0
0
tAV [µs]
0.1
0.2
0.3
0.4
0.5
Qgate [nC]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=250 µA
70
VBR(DSS) [V]
65
60
55
50
-40
0
40
80
120
160
Tj [°C]
Rev.2.3
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page 7
2014-09-19
2N7002DW
SOT363
Package Outline:
BDTIC
Footprint:
Packing:
Note: For symmetric types there is no defined Pin 1 orientation in the reel.
Dimensions in mm
Rev.2.3
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page 8
2014-09-19
2N7002DW
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
BDTIC
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.3
www.BDTIC.com/infineon
page 9
2014-09-19