Download OptiMOS 2 Small-Signal-Transistor BSD235N

BSD235N
OptiMOS™2 Small-Signal-Transistor
Product Summary
Features
VDS
• Dual N-channel
RDS(on),max
• Enhancement mode
• Super Logic level (2.5V rated)
20
V
VGS=4.5 V
350
mW
VGS=2.5 V
600
ID
0.95
A
• Avalanche rated
• Qualified according to AEC Q101
PG-SOT-363
• 100% lead-free; RoHS compliant
BDTIC
6
5
• Halogen-free according to IEC61249-2-21
1
Type
Package
Tape and Reel Information
BSD235N
PG-SOT-363 H6327: 3000 pcs/ reel
2
4
3
Marking
Lead Free
Packing
X6s
Yes
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter 1)
Symbol Conditions
Continuous drain current
ID
Value
T A=25 °C
0.95
T A=70 °C
0.76
Pulsed drain current
I D,pulse
T A=25 °C
3.8
Avalanche energy, single pulse
E AS
I D=0.95 A, R GS=16 W
1.6
Reverse diode dv /dt
dv /dt
I D=0.95 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
ESD Class
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
A
mJ
kV/µs
±12
V
0.5
W
-55 ... 150
°C
0 (<250V)
260 °C
IEC climatic category; DIN IEC 68-1
(1)
Unit
55/150/56
Remark: only one of both transistors in operation.
Rev 2.5
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page 1
2014-07-29
BSD235N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint(2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
BDTIC
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
20
-
-
Gate threshold voltage
V GS(th)
V DS=VGS, I D=1.6 µA
0.7
0.95
1.2
Drain-source leakage current
I DSS
V DS=20 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=20 V, V GS=0 V,
T j=150 °C
-
-
100
V
mA
Gate-source leakage current
I GSS
V GS=12 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=2.5 V, I D=0.29 A
-
415
600
mW
V GS=4.5 V, I D=0.95 A
-
266
350
2
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=0.76 A
S
2)
Performed on 40 mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB
Rev 2.5
www.BDTIC.com/infineon
page 2
2014-07-29
BSD235N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
49
63
-
23
32
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
3.2
-
Turn-on delay time
t d(on)
-
3.8
-
Rise time
tr
-
3.6
-
Turn-off delay time
t d(off)
-
4.5
-
Fall time
tf
-
1.2
-
Gate to source charge
Q gs
-
0.11
-
Gate to drain charge
Q gd
-
0.07
-
Gate charge total
Qg
-
0.32
-
Gate plateau voltage
V plateau
-
2.4
-
V
-
-
0.5
A
-
-
3.8
-
0.9
1.2
V
-
5.2
-
ns
-
0.97
-
nC
V GS=0 V, V DS=10 V,
f =1 MHz
V DD=10 V, V GS=4.5 V,
I D=0.95 A, R G,ext=6 W
pF
ns
BDTIC
Gate Charge Characteristics
V DD=10 V, I D=0.95 A,
V GS=0 to 4.5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.5
T A=25 °C
V GS=0 V, I F=0.95 A,
T j=25 °C
V R=10 V, I F=0.95 A,
di F/dt =100 A/µs
www.BDTIC.com/infineon
page 3
2014-07-29
BSD235N
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥4.5 V
1
0.5
0.75
Ptot [W]
0.375
ID [A]
BDTIC
0.25
0.5
0.25
0.125
0
0
0
40
80
120
0
40
TA [°C]
80
120
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
103
100
100 µs
0.5
1 ms
102
0.2
ZthJA [K/W]
10 ms
ID [A]
160
DC
10-1
0.1
0.05
0.01
101
10 µs
single pulse
10-2
10-3
100
10-2
10-1
100
101
102
VDS [V]
Rev 2.5
10-5
10-4
10-3
10-2
10-1
100
101
102
tp [s]
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page 4
2014-07-29
BSD235N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
4
600
3.5 V
4.5 V
500
3
2.2 V
2.5 V
3V
RDS(on) [mW]
3V
400
ID [A]
BDTIC
2
3.5 V
300
4.5 V
6V
200
2.5 V
1
2.3 V
100
2V
0
0
0
1
2
3
0
1
2
VDS [V]
3
4
ID [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
4
gfs [S]
ID [A]
0.5
25 °C
2
0.25
150 °C
0
0
0
1
2
3
VGS [V]
Rev 2.5
0
2
4
6
ID [A]
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page 5
2014-07-29
BSD235N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=0.95 A; V GS=4.5 V
V GS(th)=f(T j); V DS=VGS; I D=1.6 µA
parameter: I D
1.6
600
500
1.2
400
98 %
typ
VGS(th) [V]
RDS(on) [mW]
98 %
BDTIC
300
typ
0.8
2%
200
0.4
100
0
0
-60
-20
20
60
100
140
-60
-20
20
Tj [°C]
60
100
140
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
102
101
Ciss
100
IF [A]
C [pF]
Coss
101
10-1
150 °C, 98%
Crss
25 °C
10-2
150 °C
100
10-3
0
5
10
15
20
VDS [V]
Rev 2.5
25 °C, 98%
0
0.4
0.8
1.2
1.6
VSD [V]
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page 6
2014-07-29
BSD235N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=16 W
V GS=f(Q gate); I D=0.95 A pulsed
parameter: T j(start)
parameter: V DD
101
7
6
5
10 V
4V
100
16 V
VGS [V]
IAV [A]
25 °C
4
BDTIC
100 °C
125 °C
3
10-1
2
1
10-2
0
100
101
102
103
104
0
0.1
tAV [µs]
0.2
0.3
0.4
0.5
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
25
V GS
24
Qg
23
VBR(DSS) [V]
22
21
20
V gs(th)
19
18
Q g(th)
17
Q sw
Q gs
16
-60
-20
20
60
100
Q gate
Q gd
140
Tj [°C]
Rev 2.5
www.BDTIC.com/infineon
page 7
2014-07-29
BSD235N
SOT-363
Package Outline:
BDTIC
Footprint:
Packing:
Reflow soldering:
Note: For symmetric types there is no defined Pin 1 orientation in the reel.
Dimensions in mm
Rev 2.5
www.BDTIC.com/infineon
page 8
2014-07-29
BSD235N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.5
www.BDTIC.com/infineon
page 9
2014-07-29