Download OptiMOS™2 Small-Signal-Transistor BSL306N

BSL306N
OptiMOS™2 Small-Signal-Transistor
Product Summary
Features
VDS
• Dual N-channel
RDS(on),max
• Enhancement mode
• Logic level (4.5V rated)
30
V
VGS=10 V
57
mW
VGS=4.5 V
93
ID
2.3
A
• Avalanche rated
PG-TSOP-6
• Qualified according to AEC Q101
6
• 100% lead-free; RoHS compliant
5
4
BDTIC
• Halogen free according to IEC61249-2-21
1
Type
Package
Tape and Reel Information
BSL306N
TSOP-6
H6327: 3000 pcs/ reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol Conditions
Continuous drain current
ID
Marking
Lead Free
Packing
sPN
Yes
Non dry
Value
T A=25 °C
2.3
T A=70 °C
1.8
9
Pulsed drain current
I D,pulse
T A=25 °C
Avalanche energy, single pulse
E AS
I D=2.3 A, R GS=25 W
10.8
Reverse diode dv /dt
dv /dt
I D=2.3 A, V DS=16 V,
di /dt =200 A/µs,
T j,max=150 °C
6
Gate source voltage
V GS
Power dissipation1)
P tot
Operating and storage temperature
T j, T stg
T A=25 °C
JESD22-A114 -HBM
Soldering Temperature
Unit
A
mJ
kV/µs
±20
V
0.5
W
-55 ... 150
°C
0 (<250V)
260 °C
IEC climatic category; DIN IEC 68-1
1)
3
1)
Parameter
ESD Class
2
55/150/56
Remark: one of both transistors active
Rev 2.4
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page 1
2013-11-06
BSL306N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
-
250
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
BDTIC
Drain-source breakdown voltage
V (BR)DSS V GS= 0 V, I D= 250 µA
30
-
-
Gate threshold voltage
V GS(th)
V DS=VGS, I D=11 µA
1.2
1.60
2.0
Drain-source leakage current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=30 V, V GS=0 V,
T j=150 °C
-
-
100
V
mA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=1.85 A
-
66
93
mW
V GS=10 V, I D=2.3 A
-
43
57
5
-
Transconductance
g fs
|V DS|>2|I D|R DS(on)max,
I D=1.8 A
S
2)
Performed on 40mm2 FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
Rev 2.4
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page 2
2013-11-06
BSL306N
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
207
275
-
75
100
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
12
17
Turn-on delay time
t d(on)
-
4.4
-
Rise time
tr
-
2.3
-
Turn-off delay time
t d(off)
-
8.3
-
Fall time
tf
-
1.4
-
Gate to source charge
Q gs
-
0.65
-
Gate to drain charge
Q gd
-
0.45
-
Gate charge total
Qg
-
1.6
-
Gate plateau voltage
V plateau
-
3.1
-
V
-
-
0.5
A
-
-
9
-
0.83
1.1
V
-
14.4
-
ns
-
2.9
-
nC
V GS=0 V, V DS=15 V,
f =1 MHz
V DD=15 V, V GS=10 V,
I D=2.3 A, R G,ext=6 W
pF
ns
BDTIC
Gate Charge Characteristics
V DD=15 V, I D=2.3 A,
V GS=0 to 5 V
nC
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Rev 2.4
T A=25 °C
V GS=0 V, I F=2.3 A,
T j=25 °C
V R=10 V, I F=2.3 A,
di F/dt =100 A/µs
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page 3
2013-11-06
BSL306N
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
2.5
0.5
2
0.375
Ptot [W]
1.5
ID [A]
BDTIC
0.25
1
0.125
0.5
0
0
0
40
80
120
0
20
40
60
TA [°C]
80
100
140
160
TA [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0
Z thJA=f(t p)
parameter: t p
parameter: D =t p/T
101
1 ms
120
100 µs 10 µs
103
1 µs
10 ms
100
0.5
102
0.2
DC
0.1
ID [A]
ZthJA [K/W]
10-1
10-2
0.05
0.02
101
0.01
single pulse
100
10-3
10-4
10-1
10-1
100
101
102
VDS [V]
Rev 2.4
10-4
10-3
10-2
10-1
100
101
102
tp [s]
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page 4
2013-11-06
BSL306N
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
6
200
4.5 V
3.5 V
10 V
3.3 V
4V
160
3.5 V
RDS(on) [mW]
4
120
ID [A]
BDTIC
3.3 V
80
4V
4.5 V
2
5V
3V
40
10 V
2.8 V
0
0
0
1
2
3
0
2
4
6
8
6
8
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
8
8
6
6
gfs [S]
10
ID [A]
10
25 °C
4
4
150 °C
2
2
0
0
0
1
2
3
4
5
VGS [V]
Rev 2.4
0
2
4
ID [A]
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page 5
2013-11-06
BSL306N
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=2.3 A; V GS=10 V
V GS(th)=f(T j); V DS=VGS; I D=11 µA
parameter: I D
100
2.8
2.4
80
2
98 %
60
VGS(th) [V]
RDS(on) [mW]
98 %
1.6
BDTIC
typ
40
typ
1.2
2%
0.8
20
0.4
0
0
-60
-20
20
60
100
140
-60
-20
20
Tj [°C]
60
100
140
Tj [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
I F=f(V SD)
parameter: T j
103
101
100
IF [A]
C [pF]
Ciss
Coss
102
25 °C
10-1
150 °C, 98%
150 °C
10-2
25 °C, 98%
Crss
101
10-3
0
5
10
15
20
VDS [V]
Rev 2.4
0
0.4
0.8
1.2
VSD [V]
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page 6
2013-11-06
BSL306N
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 W
V GS=f(Q gate); I D=2.3 A pulsed
parameter: T j(start)
parameter: V DD
101
8
7
6
15 V
5
6V
VGS [V]
IAV [A]
100 °C
25 °C
24 V
BDTIC
125 °C
100
4
3
2
1
10-1
0
100
101
102
0
103
1
tAV [µs]
2
3
Qgate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=250 µA
36
V GS
35
Qg
34
33
VBR(DSS) [V]
32
31
30
V gs(th)
29
28
27
Q g(th)
Q sw
Q gate
26
Q gs
25
-60
-20
20
60
100
Q gd
140
Tj [°C]
Rev 2.4
www.BDTIC.com/infineon
page 7
2013-11-06
BSL306N
TSOP-6
Package Outline:
BDTIC
Footprint:
Packaging:
Dimensions in mm
Rev 2.4
www.BDTIC.com/infineon
page 8
2013-11-06
BSL306N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
BDTIC
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.4
www.BDTIC.com/infineon
page 9
2013-11-06