Download FDD4141_F085 P-Channel PowerTrench MOSFET

FDD4141_F085
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features
General Description
„ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
„ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
„ High performance trench technology for extremely low rDS(on)
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Inverter
„ Power Supplies
S
D
G
G
S
D
-P-2A52
K
TO
(T O -252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
-50
-58
(Note 1a)
-Pulsed
-10.8
A
-100
Single Pulse Avalanche Energy
EAS
Ratings
-40
(Note 3)
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
337
69
(Note 1a)
Operating and Storage Junction Temperature Range
2.4
-55 to +175
mJ
W
°C
Thermal Characteristics
RθJC
Maximum Thermal Resistance, Junction to Case
RθJA
Maximum Thermal Resistance, Junction to Ambient
1.8
(Note 1a)
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD4141
Device
FDD4141_F085
©2013 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C1
Package
D-PAK (TO-252)
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDD4141_F085 P-Channel PowerTrench® MOSFET
November 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
-40
-
-
V
-
mV/°C
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250μA, referenced to 25°C
-
-29
IDSS
Zero Gate Voltage Drain Current
VDS = -32V, VGS = 0V
-
-
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250μA
-1
-1.8
-3
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250μA, referenced to 25°C
-
5.8
-
mV/°C
VGS = -10V, ID = -12.7A
-
10.1
12.3
VGS = -4.5V, ID = -10.4A
-
14.5
18.0
VGS = -10V, ID = -12.7A,
TJ = 175°C
-
17.3
19.4
VDS = -5V, ID = -12.7A
-
38
-
S
-
2085
2775
pF
-
360
480
pF
-
210
310
pF
f = 1MHz
-
4.6
-
Ω
-
10
19
ns
VDD = -20V, ID = -12.7A,
VGS = -10V, RGEN = 6Ω
-
7
13
ns
-
38
60
ns
-
15
27
ns
-
36
50
nC
-
19
27
nC
-
7
-
nC
-
8
-
nC
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -20V,
ID = -12.7A
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -12.7A
(Note 2)
IF = -12.7A, di/dt = 100A/μs
-
-0.8
-1.2
V
-
29
44
ns
-
26
40
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 52°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.
©2013 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C1
2
www.fairchildsemi.com
FDD4141_F085 P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
80
VGS = -4.5V
VGS = -4V
60
VGS = -10V
40
VGS = -3.5V
20
VGS = -3V
0
0
1
2
3
4
3.5
3.0
VGS = -3.5V
2.5
VGS = -4V
2.0
1.5
VGS = -4.5V
1.0
VGS = -10V
0.5
0
5
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
100
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.8
1.6
1.4
1.2
1.0
0.8
ID = -12.7A
VGS = -10V
0.6
0.4
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE(oC)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
ID =-12.7A
80
60
40
TJ = 175oC
20
200
2
VDD = -5V
60
40
TJ = 175oC
20
o
TJ = -55oC
0
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0 V
10
TJ = 175 oC
1
TJ = -55 oC
0.1
TJ = 25 oC
0.01
1E-3
0.0
5
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2013 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C1
10
100
80
TJ = 25 C
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
100
TJ = 25oC
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1
80
0
Figure 3. Normalized On- Resistance
vs Junction Temperature
100
40
60
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
rDS(on), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On-Region Characteristics
2.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = -3V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDD4141_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10000
-VGS, GATE TO SOURCE VOLTAGE(V)
10
ID = -12.7A
CAPACITANCE (pF)
8
VDD = -15V
6
VDD = -20V
VDD = -10V
4
Ciss
1000
Coss
2
f = 1MHz
VGS = 0V
100
0.1
0
0
8
16
24
32
Crss
40
1
40
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
60
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
100
-ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
200
STARTING TJ = 25oC
10
STARTING TJ = 150oC
50
40
VGS = -4.5V
30
Limited by Package
20
10
o
RθJC = 1.8 C/W
1
0.01
0.1
1
10
100
0
25
1000
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
1000
ID, DRAIN CURRENT (A)
VGS = -10V
100
100us
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10ms
100ms
0.1
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
FOR TEMPERATURES
o
ABOVE 25SINGLE
C DERATE
PEAK
PULSE
o
CURRENTRAS FOLLOWS:
= 1.8 C/W
θ JC
150 – T
C
-----------------------I = I25
125
1000
TC = 25oC
100
50
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
10
10
3
10
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2013 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C1
VGS = -10V
4
www.fairchildsemi.com
FDD4141_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.005
-5
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
o
RθJC = 1.8 C/W
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDD4141_F085 Rev.C1
5
www.fairchildsemi.com
FDD4141_F085 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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Definition of Terms
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
FDD4141_F085 Rev. C1
6
www.fairchildsemi.com
FDD4141_F085 P-Channel Power Trench® MOSFET
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