Download www.BDTIC.com/FAIRCHILD 2N7002MTF N-Channel Small Signal MOSFET

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2N7002MTF
N-Channel Small Signal MOSFET
FEATURES
BVDSS = 60 V
! Lower RDS(on)
RDS(on) = 5.0 Ω
! Improved Inductive Ruggedness
! Fast Switching Times
ID = 200 mA
! Lower Input Capacitance
! Extended Safe Operating Area
SOT-23
! Improved High Temperature Reliability
Product Summary
Part Number
1.Gate 2. Source 3. Drain
BVDSS
RDS(on)
60V
5.0Ω
ID
BDTIC
2N7002
115mA
Absolute Maximum Ratings
Symbol
VDSS
ID
Characteristic
Value
60
Drain-to-Source Voltage
Continuous Drain Current (TC=25℃)
115
Continuous Drain Current (TC=100℃)
73
Units
V
mA
IDM
Drain Current-Pulsed
800
mA
VGS
Gate-to-Source Voltage
±20
V
Total Power Dissipation (TC=25℃)
0.2
W
Linear Derating Factor
1.6
mW/℃
- 55 to +150
℃
PD
TJ , TSTG
①
Operating Junction and
Storage Temperature Range
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
Units
RθJA
Junction-to-Ambient
--
625
℃/W
Rev. C1
www.BDTIC.com/FAIRCHILD
N-Channel
Small Signal MOSFET
2N7002MTF
Electrical Characteristics (TC=25℃ unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max. Units
Test Condition
BVDSS
Drain-Source Breakdown Voltage
60
-
-
V
VGS = 0V, ID = 250µA
VGS(th)
Gate Threshold Voltage
1.2
-
2.5
V
VDS = VGS, ID = 250µA
-
-
100
Gate-Source Leakage, Forward
IGSS
Gate-Source Leakage, Reverse
IDSS
Drain-to-Source Leakage Current
ID(ON)
On-State Drain-Source Current
Static Drain-Source
nA
VGS = 20V
VGS = -20V
-
-
-100
-
-
1.0
-
-
500
0.5
-
-
A
VDS = 10V, VGS = 10V
-
-
5.0
Ω
VGS = 10V, ID = 0.5A
0.08
-
-
S
VDS = 15V, ID = 0.2A
µA
VGS = 40V
VGS = 40V, TC = 125℃
BDTIC
RDS(on)
On-State Resistance
②
gfs
Forward Transconductance ②
Ciss
Input Capacitance
-
-
50
Coss
Output Capacitance
-
-
25
Crss
Reverse Transfer Capacitance
-
-
5
td(on)
Turn-On Delay Time
-
-
20
Rise Time
-
-
-
Turn-Off Delay Time
-
-
20
Fall Time
-
-
-
tr
td(off)
tf
pF
VDS = 25V, VGS = 0V,
f = 1.0MHz
VDD = 30V, ID = 0.2A
ns
RG = 25Ω
②③
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min.
Typ.
Max. Units
-
-
115
mA
IS
Continuous Source Current
ISD
Pulse Source Current
①
-
-
800
mA
VSD
Diode Forward Voltage
②
-
-
1.5
V
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
③ Essentially Independent of Operating Temperature
Test Condition
Integral reverse pn-diode
In the MOSFET
TA = 25 ℃, IS = 115mA
VGS = 0V
www.BDTIC.com/FAIRCHILD
N-Channel
Small Signal MOSFET
2N7002MTF
BDTIC
www.BDTIC.com/FAIRCHILD
2N7002MTF
N-Channel
Small Signal MOSFET
BDTIC
www.BDTIC.com/FAIRCHILD
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As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11