Download FDP054N10 N MOSFET FDP054N10 — N

FDP054N10
N 沟道 PowerTrench®MOSFET
100 V， 144 A， 5.5 m
特性
说明
• RDS(on) = 4.6 m (Typ.)@VGS = 10 V, ID = 75 A
此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低通态电阻并保持卓越
开关性能而定制的。
• 快速开关速度
• 低栅极电荷
应用
• 高性能沟道技术可实现极低的 RDS(on)
• 用于 ATX/Server/Telecom PSU 的同步整流
• 高功率和高电流处理能力
• 电池保护电路
• 符合 RoHS 标准
• 电机驱动和不间断电源
• 微型太阳能逆变器
D
G
D
S
G
TO-220
S
MOSFET 最大额定值 TC = 25oC 除非另有说明。
符号
VDSS
漏极－源极电压
参数
VGSS
栅极－源极电压
o
漏极电流
EAS
dv/dt
V
102
－连续 （TC = 25 C，封装限制）
120
A
（注 1）
576
A
单脉冲雪崩能量
（注 2）
1153
mJ
峰值二极管雪崩能量
（注 3）
6
V/ns
漏极电流
PD
功耗
TJ, TSTG
工作和存储温度范围
TL
±20
－连续 （TC = 100oC，硅限制）
o
IDM
单位
V
144
－连续 （TC = 25 C，硅限制）
ID
FDP054N10
100
－脉冲
(TC = 25oC)
o
－超过 25 C 时降额
用于焊接的最大引脚温度，距离外壳 1/8”，持续 5 秒
263
W
1.75
W/oC
-55 至 +175
o
C
300
o
C
热性能
符号
参数
RθJC
结至外壳热阻最大值
FDP054N10
0.57
RθJA
结至环境热阻最大值
62.5
©2009 飞兆半导体公司
FDP054N10 Rev. C3
1
单位
o
C/W
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
2013 年 12 月
器件编号
FDP054N10
顶标
FDP054N10
封装
TO-220
包装方法
塑料管
卷尺寸
不适用
带宽
不适用
数量
50 单元
电气特性 TC = 25oC 除非另有说明。
符号
参数
测试条件
最小值
典型值
最大值
单位
100
-
-
V
-
0.01
-
V/oC
关断特性
BVDSS
BVDSS
/ TJ
漏极－源极击穿电压
ID = 250 μA, VGS = 0 V, TC = 25oC
击穿电压温度系数
ID = 250 μA，参考 25oC
IDSS
零栅极电压漏极电流
-
-
1
VDS = 100 V, VGS = 0 V, TC = 150oC
-
-
500
IGSS
栅极－体漏电流
VGS = ±20 V, VDS = 0 V
-
-
±100
VGS(th)
RDS(on)
栅极阈值电压
VGS = VDS, ID = 250 A
2.5
3.5
4.5
V
漏极至源极静态导通电阻
VGS = 10 V, ID = 75 A
-
4.6
5.5
m
gFS
正向跨导
VGS = 10 V, ID = 75 A
-
192
-
S
VDS = 25 V, VGS = 0 V,
f = 1 MHz
-
9985
13280
pF
-
935
1245
pF
-
390
585
pF
-
156
203
nC
-
53
-
nC
-
48
-
nC
-
44
98
ns
-
92
194
ns
-
80
170
ns
-
39
88
ns
VDS = 100 V, VGS = 0 V
A
nA
导通特性
动态特性
Ciss
Coss
Crss
输入电容
输出电容
反向传输电容
Qg(tot)
10V 的栅极电荷总量
Qgs
栅极－源极栅极电荷
Qgd
VDS = 80 V, ID = 75 A,
VGS = 10 V
栅极－漏极 “ 密勒 ” 电荷
（说明 4）
开关特性
td(on)
导通延迟时间
tr
开通上升时间
td(off)
关断延迟时间
tf
关断下降时间
VDD = 50 V, ID = 75 A,
VGS = 10 V, RG = 4.7 
（说明 4）
漏极－源极二极管特性
IS
漏极－源极二极管最大正向连续电流
-
-
144
A
ISM
漏极－源极二极管最大正向脉冲电流
-
-
576
A
VSD
漏极－源极二极管正向电压
VGS = 0 V, ISD = 75 A
-
-
1.3
V
trr
反向恢复时间
-
57
-
ns
Qrr
反向恢复电荷
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/s
-
121
-
nC
注意：
1: 重复额定值：脉冲宽度受限于最大结温。
2: L = 0.41 mH， IAS = 75 A， VDD = 50 V， RG = 25 ，启动 TJ = 25°C。
3: ISD  75 A， di/dt  200 A/ms， VDD  BVDSS，启动 TJ = 25°C。
4: 本质上独立于工作温度的典型特性。
©2009 飞兆半导体公司
FDP054N10 Rev. C3
2
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
封装标识与定购信息
图 1. 导通区域特性
图 2. 传输特性
1000
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
* Notes :
1. VDS = 20V
2. 250s Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
1000
100
*Notes:
1. 250s Pulse Test
100
o
150 C
o
25 C
10
o
-55 C
o
2. TC = 25 C
1
10
0.1
3
6
1
VDS, Drain-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压
IS, Reverse Drain Current [A]
1000
6
VGS = 10V
5
VGS = 20V
4
o
150 C
100
o
25 C
10
Notes:
1. VGS = 0V
o
* Note : TC = 25 C
2. 250s Pulse Test
3
0
100
200
ID, Drain Current [A]
300
1
0.2
400
图 5. 电容特性
Ciss
10000
Coss
Crss
* Note:
1. VGS = 0V
2. f = 1MHz
100
0.1
©2009 飞兆半导体公司
FDP054N10 Rev. C3
1.2
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
0.4
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
图 6. 栅极电荷
VGS, Gate-Source Voltage [V]
100000
Capacitances [pF]
7
图 4. 体二极管正向电压变化与源电流和温度
7
RDS(on) [m],
Drain-Source On-Resistance
4
5
6
VGS, Gate-Source Voltage[V]
1
10
VDS, Drain-Source Voltage [V]
VDS = 20V
VDS = 50V
VDS = 80V
8
6
4
2
* Note : ID = 75A
0
0
30
3
30
60
90
120
Qg, Total Gate Charge [nC]
150
180
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
典型性能特征
图 7. 击穿电压变化与温度
图 8. 导通电阻变化与温度
2.4
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
* Notes :
1. VGS = 0V
2. ID = 10mA
0.8
-80
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
1.2
0.8
* Notes :
1. VGS = 10V
2. ID = 75A
-40
0
40
80
120 160
o
TJ, Junction Temperature [ C]
200
图 10. 最大漏极电流与壳体温度
150
ID, Drain Current [A]
1000
ID, DRAIN CURRENT (A)
1.6
0.4
-80
200
图 9. 最大安全工作区
100
100 s
10
THIS AREA IS
LIMITED BY rDS(on)
1
2.0
DC
SINGLE PULSE
TJ = MAX RATED
Limitted by package
50
1 ms
RJc = 0.57 oC/W
10 ms
100 ms
TC = 25 oC
0.1
0.1
100
1
10
100
0
25
400
VDS, DRAIN to SOURCE VOLTAGE (V)
50
75
100
125
o
TC, Case Temperature [ C]
150
175
图 11. 瞬态热响应曲线
]
1
ZJC
(t)，热响应
[oC/W] [Z
Thermal
Response
 JC
0.5
0.1
0.2
0.1
0.01
t1
* Notes :
t2
o
1. ZJC(t) = 0.57 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
Single pulse
0.001
-5
10
©2009 飞兆半导体公司
FDP054N10 Rev. C3
PDM
0.05
0.02
0.01
-4
10
-3
-2
-1
10
10
10
Rectangular
Pulse Duration
[sec]
t1，矩形脉冲持续时间
[秒]
4
1
10
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
典型性能特征 （接上页）
FDP054N10 — N 沟道 PowerTrench® MOSFET
IG = 常量
图 12. 栅极电荷测试电路与波形
VDS
RG
V
10V
GS
RL
VDS
90%
VDD
VGS
VGS
DUT
10%
td(on)
tr
t on
td(off)
tf
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
©2009 飞兆半导体公司
FDP054N10 Rev. C3
5
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
图 15. 二极管恢复 dv/dt 峰值测试电路与波形
©2009 飞兆半导体公司
FDP054N10 Rev. C3
6
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
机械尺寸
图 16. TO220，模塑， 3 引脚，非 Jedec Variation AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-0R3
©2009 飞兆半导体公司
FDP054N10 Rev. C3
7
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2009 飞兆半导体公司
FDP054N10 Rev. C3
8
www.fairchildsemi.com
FDP054N10 — N 沟道 PowerTrench® MOSFET
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