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FDD4141_F085 P-Channel PowerTrench® MOSFET -40V, -50A, 12.3mΩ Features General Description Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized Bvdss capability to offer superior performance benefit in the applications. and optimized switching performance capability reducing power dissipation losses in converter/inverter applications. Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A High performance trench technology for extremely low rDS(on) Qualified to AEC Q101 RoHS Compliant Applications Inverter Power Supplies S D G G S D -P-2A52 K TO (T O -252) D MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limited) ID TC = 25°C -Continuous (Silicon limited) TC = 25°C -Continuous TA = 25°C PD TJ, TSTG Units V ±20 V -50 -58 (Note 1a) -Pulsed -10.8 A -100 Single Pulse Avalanche Energy EAS Ratings -40 (Note 3) Power Dissipation TC = 25°C Power Dissipation TA = 25°C 337 69 (Note 1a) Operating and Storage Junction Temperature Range 2.4 -55 to +175 mJ W °C Thermal Characteristics RθJC Maximum Thermal Resistance, Junction to Case RθJA Maximum Thermal Resistance, Junction to Ambient 1.8 (Note 1a) 52 °C/W Package Marking and Ordering Information Device Marking FDD4141 Device FDD4141_F085 ©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1 Package D-PAK (TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET November 2013 Symbol Parameter Test Conditions Min Typ Max Units -40 - - V - mV/°C Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250μA, referenced to 25°C - -29 IDSS Zero Gate Voltage Drain Current VDS = -32V, VGS = 0V - - -1 μA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250μA -1 -1.8 -3 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250μA, referenced to 25°C - 5.8 - mV/°C VGS = -10V, ID = -12.7A - 10.1 12.3 VGS = -4.5V, ID = -10.4A - 14.5 18.0 VGS = -10V, ID = -12.7A, TJ = 175°C - 17.3 19.4 VDS = -5V, ID = -12.7A - 38 - S - 2085 2775 pF - 360 480 pF - 210 310 pF f = 1MHz - 4.6 - Ω - 10 19 ns VDD = -20V, ID = -12.7A, VGS = -10V, RGEN = 6Ω - 7 13 ns - 38 60 ns - 15 27 ns - 36 50 nC - 19 27 nC - 7 - nC - 8 - nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to -10V Qg Total Gate Charge VGS = 0V to -5V Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -20V, ID = -12.7A Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = -12.7A (Note 2) IF = -12.7A, di/dt = 100A/μs - -0.8 -1.2 V - 29 44 ns - 26 40 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. a) 52°C/W when mounted on a 1 in2 pad of 2 oz copper b) 100°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. 3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V. ©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1 2 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 -ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 80 VGS = -4.5V VGS = -4V 60 VGS = -10V 40 VGS = -3.5V 20 VGS = -3V 0 0 1 2 3 4 3.5 3.0 VGS = -3.5V 2.5 VGS = -4V 2.0 1.5 VGS = -4.5V 1.0 VGS = -10V 0.5 0 5 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) 100 PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1.8 1.6 1.4 1.2 1.0 0.8 ID = -12.7A VGS = -10V 0.6 0.4 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX ID =-12.7A 80 60 40 TJ = 175oC 20 200 2 VDD = -5V 60 40 TJ = 175oC 20 o TJ = -55oC 0 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 10 TJ = 175 oC 1 TJ = -55 oC 0.1 TJ = 25 oC 0.01 1E-3 0.0 5 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1 10 100 80 TJ = 25 C 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 TJ = 25oC PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 1 80 0 Figure 3. Normalized On- Resistance vs Junction Temperature 100 40 60 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On-Region Characteristics 2.0 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = -3V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 10000 -VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = -12.7A CAPACITANCE (pF) 8 VDD = -15V 6 VDD = -20V VDD = -10V 4 Ciss 1000 Coss 2 f = 1MHz VGS = 0V 100 0.1 0 0 8 16 24 32 Crss 40 1 40 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 -ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 200 STARTING TJ = 25oC 10 STARTING TJ = 150oC 50 40 VGS = -4.5V 30 Limited by Package 20 10 o RθJC = 1.8 C/W 1 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 10000 P(PK), PEAK TRANSIENT POWER (W) 1000 ID, DRAIN CURRENT (A) VGS = -10V 100 100us 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED TC = 25oC 10ms 100ms 0.1 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 FOR TEMPERATURES o ABOVE 25SINGLE C DERATE PEAK PULSE o CURRENTRAS FOLLOWS: = 1.8 C/W θ JC 150 – T C -----------------------I = I25 125 1000 TC = 25oC 100 50 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 2 10 10 3 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1 VGS = -10V 4 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 1.8 C/W -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDD4141_F085 Rev.C1 5 www.fairchildsemi.com FDD4141_F085 P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 FDD4141_F085 Rev. C1 6 www.fairchildsemi.com FDD4141_F085 P-Channel Power Trench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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