Download NZT902 NPN Low Saturation Transistor NZT 902 NPN Low Saturation

NZT902
tm
NPN Low Saturation Transistor
4
• These devices are designed with high current gain and
low saturation voltage with collector currents up to 3A continuous.
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Value
Units
VCEO
Symbol
Collector-Emitter Voltage
Parameter
90
V
VCBO
Collector-Base Voltage
120
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
TJ
Junction Temperature
TSTG
Storage Temperature Range
- Continuous
3
A
150
°C
- 55 ~ +150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
PD
Total Device Dissipation
RθJA
Thermal Resistance, Junction to Ambient
Units
Value
1
W
125
°C/W
* Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm.
Electrical Characteristics*
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
90
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
120
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
5
V
ICBO
Collector-Base Cutoff Current
VCB = 100V
VCB = 100V, Ta = 100 °C
100
10
nA
uA
IEBO
Emitter-Base Cutoff Current
VEB = 4V
100
nA
hFE
DC Current Gain
IC = 0.1A, VCE = 2V
IC = 1A, VCE = 2V
IC = 2A, VCE = 2V
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 0.1A, IB = 5.0mA
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
50
250
600
mV
mV
mV
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 100mA
1.25
V
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
35
pF
fT
Transition Frequency
IC = 100mA, VCE = 5V, f = 100MHz
80
80
25
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
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©2006 Fairchild Semiconductor Corporation
NZT902 Rev. B
1
www.fairchildsemi.com
NZT902 NPN Low Saturation Transistor
September 2006
NZT902 NPN Low Saturation Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC current Gain
350
0.40
o
150 C
1.6mA
0.35
300
75 C
250
1.2mA
hfe, Current Gain
Collector Current, Ic [A]
1.4mA
0.30
0.25
1.0mA
0.20
0.8mA
0.15
0.6mA
0.10
0.4mA
0.05
Ib=0.2mA
0.00
0.0
0.5
1.0
o
25 C
200
o
-25 C
150
o
-50 C
100
50
1.5
0
1E-3
2.0
0.01
0.1
1
Collector Current, [A]
Collector-Emitter Voltage, Vce[V]
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
0.5
1.2
B=10
B=10
o
0.4
150 C
Vbe(sat), Saturation Voltage,[V]
Vce(sat), Saturation Voltage,[V]
Vce=2V
o
o
75 C
0.3
o
25 C
0.2
o
-25 C
o
-50 C
0.1
0.0
0.1
o
1.0
0.8
0.6
o
25 C
o
75 C
o
150 C
0.4
0.2
0.01
1
-50 C
o
-25 C
0.1
Collector Current, [A]
1
Collector Current, [A]
Figure 5. Output Capacitance
Figure 6. Power Dissipation vs
Ambient Temperature
80
1.5
f=1mhz
Pd, Power Dissipation,[W]
Output Capacitance, Cobo[pF]
70
60
50
40
30
20
10
1.0
0.5
0.0
0
20
40
60
80
0
100
Reverse Voltage, VR[V]
25
50
75
100
125
150
o
Case Temperature, TC[ C]
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2
NZT902 Rev. B
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NZT902 NPN Low Saturation Transistor
Typical Performance Characteristics
Figure 9. SOA
10
Collector Current. Ic[A]
Icmax
1
0.1
0.01
Vceo(Max)
1E-3
0.1
1
10
100
Collector-Emmiter Voltage, Vce[V]
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3
NZT902 Rev. B
www.fairchildsemi.com
NZT902 NPN Low Saturation Transistor
Mechanical Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
7.00 ±0.30
(0.60)
0.70 ±0.10
(0.95)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
Dimensions in Millimeters
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NZT902 Rev. B
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
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5
NZT902 Rev. B
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NZT902 NPN Low Saturation Transistor
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