Download FJV3114R NPN Epitaxial Silicon Transistor

FJV3114R
tm
NPN Epitaxial Silicon Transistor
Features
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=4.7KΩ, R2=47KΩ)
• Complement to FJV4114R
Eqivalent Circuit
C
3
R34
2
1
B
E
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
10
V
100
mA
-55~150
°C
IC
Collector Current
TSTG
Storage Temperature Range
TJ
Junction Temperature
150
°C
PC
Collector Power Dissipation, by RθJA
200
mW
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Electrical Characteristics*
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Condition
MIN
Typ
MAX
Units
V(BR)CBO
Collector-Emitter Breakdown Voltage
IC = 10 uA, IE = 0
50
V
V(BR)CEO
Collector-Base Breakdown Voltage
IC = 100 uA, IB = 0
50
ICBO
Collector-Cutoff Current
VCB = 40 V, IE = 0
hFE
DC Current Gain
VCE = 5 V, IC = 5 mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
fT
Current Gain - Bandwidth Product
VCE = 10V, IC = 5 mA
250
MHz
Ccb
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
3.7
pF
VI(off)
Input Off Voltage
VCE = 5 V, IC = 100uA
VI(on)
Input On Voltage
VCE = 0.2V, IC = 5mA
R1
Input Resistor
3.2
R1/R2
Resistor Ratio
0.09
V
0.1
uA
0.3
V
68
0.5
V
1.3
V
4.7
6.2
KΩ
0.1
0.11
* Pulse Test: PW≤300µs, Duty Cycle≤2%
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©2006 Fairchild Semiconductor Corporation
FJV3114R Rev. B
1
www.fairchildsemi.com
FJV3114R NPN Epitaxial Silicon Transistor
November 2006
Figure 1. DC current Gain
Figure 2. Input On Voltage
10
1000
VCE =0.3V
R1 = 4.7K
R2 = 47K
VI(on)[V], INPUT VOLTAGE
hFE, DC CURRENT GAIN
VCE = 5V
R1 = 4.7K
R2 = 47K
100
0.1
0.1
10
1
10
100
1
1000
1
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
100
Figure 4. Power Derating
1000
280
IC = 10IB
R1 = 4.7K
R2 = 47K
240
PC[mW], POWER DISSIPATION
VCE(sat)[mV], SATURATION VOLTAGE
10
IC[mA], COLLECTOR CURRENT
100
10
200
160
120
80
40
0
1
1
10
0
100
25
50
75
100
125
150
175
o
IC[mA], COLLECTOR CURRENT
Ta[ C], AMBIENT TEMPERATURE
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2
FJV3114R Rev. B
www.fairchildsemi.com
FJV3114R NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
FJV3114R NPN Epitaxial Silicon Transistor
Package Dimensions
0.45~0.60
0.20 MIN
SOT-23
2.40 ±0.10
1.30 ±0.10
0.40 ±0.03
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
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FJV3114R Rev. B
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intended for surgical implant into the body, or (b) support or sustain life, or
(c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably expected
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whose failure to perform can be reasonably expected to cause the failure
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I21
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FJV3114R Rev. B
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FJV3114R NPN Epitaxial Silicon Transistor
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