Download 2SD1781K

2SD1781K
Transistors
Medium Power Transistor (32V, 0.8A)
2SD1781K
zExternal dimensions (Unit : mm)
zFeatures
1) Very Low VCE(sat).
VCE(sat) = 0.1V(Typ.)
̈́IC / IB= 500УA / 50mAͅ
2) High current capacity in compact package.
3) Complements the 2SB1197K.
2.9±0.2
1.1+0.2
−0.1
1.9±0.2
0.8±0.1
0.95 0.95
(2)
0~0.1
2.8±0.2
1.6+0.2
−0.1
(1)
0.4 +0.1
−0.05
zStructure
Epitaxial planar type
NPN silicon transistor
+0.1
0.15 −0.06
0.3~0.6
(3)
All terminals have
same dimensions
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : AF∗
(1) Emitter
(2) Base
(3) Collector
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25qC)
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
IC
0.8
A (DC)
ICP
1.5
A (Pulse)
PC
200
mW
Parameter
Collector current
Collector power dissipation
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗
∗ Single pulse Pw=100ms
Rev.A
1/3
2SD1781K
Transistors
zElectrical characteristics (Ta=25qC)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
40
−
−
V
Collector-emitter breakdown voltage
BVCEO
32
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50μA
ICBO
−
−
0.5
μA
VCB=20V
Collector cutoff current
Conditions
IC=50μA
IEBO
−
−
0.5
μA
VEB=4V
VCE(sat)
−
0.1
0.4
V
IC/IB=500mA/50mA
hFE
120
−
390
−
Transition frequency
fT
−
150
−
MHz
Output capacitance
Cob
−
15
−
pF
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
zPackaging specifications and hFE
hFE
2SD1781K
QR
VCB=10V, IE=0A, f=1MHz
hFE values are classified as follows :
Taping
Item
Q
R
Code
T146
hFE
120 to 270
180 to 390
Basic ordering
unit (pieces)
3000
Package
Type
VCE=3V, IC=100mA
VCE=5V, IE= −50mA, f=100MHz
zElectrical characteristic curves
COLLECTOR CURRENT : IC (mA)
200
100
50
20
10
5
2
1
0.5
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1
Grounded emitter propagation
characteristics
1000
400
1mA
900μA
300
800μA
700μA
600μA
200
500μA
400μA
300μA
100
200μA
100μA
0
VCE=5V
Tc=25°C
0
2
4
6
IB=0μA
8
10
500
DC CURRENT GAIN : hFE
Ta=25°C
VCE=6V
500
COLLECTOR CURRENT : IC (mA)
1000
Ta=100°C
200
100
50
20
10
1
Grounded emitter output
characteristics
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2
25°C
−55°C
Fig.3
DC current gain vs. collector
current
Rev.A
2/3
2SD1781K
Ta=25°C
500
200
100
IC/IB=50
50
20
20
10
10
5
1
2
5
10 20
50 100 200
500 1000
1000
500
200
Ta=100°C
25°C
−55°C
100
50
20
10
5
1
Ta=25°C
f=1MHz
IE=0A
20
10
5
0.1 0.2
0.5 1.0 2.0
5.0 10
20
5
10 20
50 100 200
500 1000
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Fig.5 Collector-emitter saturation
voltage vs. collector current (
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.4 Collector-emitter saturation
voltage vs. collector current ( )
50
2
Ta=25°C
VCE=5V
500
200
100
50
20
10
−1
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
100
1000
lC/lB=10
TRANSITION FREQUENCY : fT (MHz)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Transistors
−2
−5
−10 −20
−50 −100 −200
EMITTER CURRENT : IE (mA)
Fig.6
)
Gain bandwidth product vs.
emitter current
Ta=25°C
f=1MHz
IC=0A
200
100
50
20
10
5
0.1
0.2
0.5
1.0
2.0
5.0
10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.8
Emitter input capacitance vs.
emitter-base voltage
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1