Download 2SB852K

2SB852K
Transistors
High-gain Amplifier Transistor (−32V, −0.3A)
2SB852K
zExternal dimensions (Unit : mm)
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in 4kΩ resistor between base and emitter.
3) Complements the 2SD1383K.
2SB852K
2.9
1.1
0.4
2SB852K
SMT3
B
(2)
(1)
0.95 0.95
0.15
1.9
U∗
T146
3000
0.3Min.
Type
Package
hFE
Marking
1.6
2.8
zPackaging specifications
Code
Basic ordering unit (pieces)
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
∗ Denotes hFE
Each lead has same dimensions
zCircuit diagram
C
B
RBE
E : Emitter
B : Base
C : Collector
4kΩ
E
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
−40
−32
−6
−0.3
0.2
150
−55 to +150
Unit
V
V
V
A
W
°C
°C
∗
∗ RBE=0Ω
zElectrical characteristics (Ta=25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
Collector-emitter saturation voltage
Transition frequency
Output capacitance
VCE(sat)
fT
Cob
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Min.
−40
−32
−6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
200
3
Max.
−
−
−
−1
−1
−
−1.5
−
−
Unit
V
V
V
µA
µA
−
V
MHz
pF
Conditions
IC= −100µA
IC= −1mA
IE= −100µA
VCB= −24V
VEB= −4.5V
VCE= −5V, IC= −0.1A
IC= −200mA, IB= −0.4mA
∗1
VCE= −5V, IE=10mA, f=100MHz ∗2
VCB= −10V, IE=0A, f=1MHz
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Rev.B
1/2
2SB852K
Transistors
zElectrical characteristic curves
−500 VCE= −6V
25
COLLECTOR CURRENT : IC (mA)
50
−50
−20
Ta= −55°C
−100
Ta=25°
C
75
−200
0°C
100
−100
Ta=10
COLLECTOR CURRENT : IC (mA)
POWER DISSIPATION : PC/PCMax (%)
125
−10
−5
Ta=25°C
−9µA
−80
−8µA
−7µA
−60
−6µA
−5µA
−40
−4µA
−3µA
−20
−2µA
−2
0
0
25
50
75
100
125
0
−0.4
150
−1.2
−1.6
−2.0
−2.4
−20
−5V
10000
5000
VCE= −3V
2000
1000
500
−3
−4
−5
IC/IB=500
−10
50000
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
50000
20000
−2
Fig.3 Ground emitter output characteristics
VCE= −5V
Ta=25°C
IB=0
−1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter propagation characteristisc
Fig.1 Power dissipation curves
100000
−0.8
0
0
BASE TO EMITTER VOLTAGE : VBE (V)
AMBIENT TEMPERATURE : Ta (°C)
DC CURRENT GAIN : hFE
−10µA
°C
100
Ta=
20000
5°C
2
10000
°C
5
−5
5000
2000
−5
−2
Ta= −55°C
−1
−0.5
25°C
100°C
1000
200
−20
−50 −100 −200
−5 −10
−500 −1000 −2000
5000
2000
1000
500
200
100
50
1
2
5
10 20
50
100 200
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
−0.1
−5
−500 −1000 −2000
100
Ta=25°C
f=1MHz
IE=0A
50
20
10
5
2
1
−1
−2
−5
−10
−20
−50
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
−10
−20
−50
−100 −200
−500
−1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector current ( ΙΙ )
OUTPUT CAPACITANCE : Cob (pF)
Ta=25°C
VCE= −5V
−50 −100 −200
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( Ι )
10000
−20
EMITTER INPUT CAPACITANCE : Cib (pF)
−5 −10
COLLECTOR CURRENT : IC (mA)
TRANSISION FREQUWNCY : fT (MHz)
−0.2
500
100
−2
Fig.6 Collector-emitter saturation voltage
vs. collector current
20
Ta=25°C
f=1MHz
IE=0A
10
5
2
1
−1
−2
−5
−10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.9 Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1