Download 2SD2670

2SD2670
Transistors
Low frequency amplifier
2SD2670
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
TSMT3
1.0MAX
zFeatures
1) A collector current is large.
2) VCE(sat) : max.250mV
At lc=1.5A / lB=30mA
2.9
0.85
0.4
0.7
1.6
2.8
(3)
0.3~0.6
0~0.1
(2)
(1)
0.95 0.95
1.9
0.16
(1) Base
(2) Emitter
Each lead has same dimensions
(3) Collector
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Power siddipation
Junction temperature
Range of storage temperature
Tj
Tstg
Limits
15
12
6
3
6
500
1 ∗2
150
−55 to +150
Unit
V
V
V
A
A∗1
mW
W
°C
°C
∗1 Single pulse, Pw=1ms
∗2 Mounted on a 25×25× t 0.8mm Ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
12
6
−
−
−
270
−
−
Typ.
−
−
−
−
−
120
−
360
30
Max.
−
−
−
100
100
250
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=10µA
IC=1mA
IE=10µA
VCB=15V
VEB=6V
IC=1.5A, IB=30mA
VCE=2V, IC=500mA ∗
VCE=2V, IE=−500mA, f=100MHz ∗
VCB=10V, IE=0A, f=1MHz
∗ Pulse
Rev.C
1/2
2SD2670
Transistors
zPackaging specifications
package
Type
Taping
TL
Code
3000
Basic ordering unit (pieces)
2SD2670
1000
10
COLLECTOR TO EMITTER
SATURATION VOLTAGE : VCE(sat) (V)
VCE=−2V
Pulsed
Ta=25 C
Ta=40 C
100
10
0.001
0.01
0.1
1
Ta=−45 C
Ta=100 C
0.1
0.01
0.001
10
Ta=25 C
1
0.01
0.1
1
Ta=100 C
Ta=25 C
1
Ta=−45 C
0.1
0.01
0.001
10
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagation
characteristics
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20/1
Pulsed
100
0.1
1
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
IC/IB=50/1
IC/IB=10/1
IC/IB=20/1
0.1
0.001
0.01
0.1
1
10
Fig.3 Base-emitter saturation voltage
vs.collector current
1000
Ta=25 C
VCE=−2V
f= 100MHz
10
0.01
Ta=25 C
Pulsed
COLLECTOR CURRENT : IC (A)
1000
10
1
1
10
Fig.2 Collector-emitter saturation voltage
vs. collector current
Fig.1 DC current gain
vs. collector current
0.1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT :IC (A)
IC/IB=20/1
VCE=2V
Pulsed
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
DC CURRENT GAIN : hFE
Ta=100 C
BASE SATURATION VOLTAGE : VBE(sat) (V)
zElectrical characteristic curves
10
IC=0A
f=1MHz
Ta=25 C
Cib
100
Cob
10
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
COLLECTOR TO BASE VOLTAGE : VCB(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.C
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1