Download STY100NM60N

STY100NM60N
N-channel 600 V, 0.025 Ω, 98 A, MDmesh™ II Power MOSFET
in Max247
Preliminary data
Features
Order code
VDSS
@TjMAX
RDS(on) max
ID
STY100NM60N
650 V
< 0.029 Ω
98 A
■
Max247 worldwide best RDS(on)
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
1
2
3
Max247
Applications
■
Switching applications
Figure 1.
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
Internal schematic diagram
$
'
3
!-V
Table 1.
Device summary
Order code
Marking
Package
Packaging
STY100NM60N
100NM60N
Max247
Tube
September 2011
Doc ID 022225 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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1/10
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10
Contents
STY100NM60N
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
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.............................................. 6
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STY100NM60N
1
Electrical ratings
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
Gate- source voltage
25
V
ID
Drain current (continuous) at TC = 25 °C
98
A
ID
Drain current (continuous) at TC = 100 °C
74
A
IDM (1)
Drain current (pulsed)
392
A
PTOT
Total dissipation at TC = 25 °C
625
W
Peak diode recovery voltage slope
15
V/ns
VGS
dv/dt
(2)
Tstg
Parameter
Storage temperature
°C
- 55 to 150
Max. operating junction temperature
Tj
°C
1. Pulse width limited by safe operating area.
2. ISD ≤98 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS.
Table 3.
Symbol
Thermal data
Value
Unit
Rthj-case Thermal resistance junction-case max
0.2
°C/W
Rthj-amb Thermal resistance junction-ambient max
30
°C/W
300
°C
Value
Unit
Tj
Parameter
Maximum lead temperature for soldering purpose
Table 4.
Symbol
Avalanche characteriscics
Parameter
IAR
Avalanche current, repetetive or not repetetive (pulse
width limited by Tjmax)
TBD
A
EAS
Single pulse avalanche energy (starting Tj=25 °C,
ID=Iar, VDD=50)
TBD
mJ
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Electrical characteristics
2
STY100NM60N
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5.
Symbol
V(BR)DSS
On /off states
Parameter
Test conditions
Drain-source
breakdown voltage
(VGS = 0)
ID = 1 mA
Min.
Typ.
Max.
Unit
600
V
IDSS
VDS = 600 V
Zero gate voltage
drain current (VGS = 0) VDS = 600 V, TC=125 °C
10
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
100
nA
3
4
V
0.025
0.029
Ω
Min.
Typ.
Max.
Unit
-
pF
pF
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on
resistance
Table 6.
Symbol
2
VGS = 10 V, ID = 47 A
Dynamic
Parameter
Test conditions
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
TBD
TBD
TBD
Equivalent output
capacitance
VDS = 0 to 480 V VGS = 0
-
TBD
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
2
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 98 A,
VGS = 10 V
(see Figure 3)
-
TBD
TBD
TBD
-
nC
nC
nC
Ciss
Coss
Crss
Coss(eq)(1)
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS
Table 7.
Symbol
td(on)
tr
td(off)
tf
4/10
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 49 A,
RG = 2 Ω, VGS = 10 V
(see Figure 4)
(see Figure 7)
Min.
Typ.
-
TBD
TBD
TBD
TBD
Doc ID 022225 Rev 1
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Max. Unit
-
ns
ns
ns
ns
STY100NM60N
Electrical characteristics
Table 8.
Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Qrr
IRRM
trr
Qrr
IRRM
Test conditions
Min.
Typ.
Max. Unit
-
98
392
A
A
ISD = 98 A, VGS = 0
-
1.6
V
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 48 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 4)
-
TBD
TBD
TBD
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 48 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 4)
-
TBD
TBD
TBD
ns
µC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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Test circuits
STY100NM60N
3
Test circuits
Figure 2.
Switching times test circuit for
resistive load
Figure 3.
Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
µF
2200
RL
µF
VGS
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
VD
RG
2200
µF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 4.
AM01469v1
Test circuit for inductive load
Figure 5.
switching and diode recovery times
A
A
D.U.T.
FAST
DIODE
B
B
Unclamped inductive load test
circuit
L
A
D
G
VD
L=100µH
S
3.3
µF
B
25 Ω
1000
µF
D
VDD
2200
µF
3.3
µF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
Figure 6.
Unclamped inductive waveform
AM01471v1
Figure 7.
Switching time waveform
ton
V(BR)DSS
tdon
VD
toff
tr
tdoff
tf
90%
90%
IDM
10%
ID
VDD
10%
0
VDS
VDD
90%
VGS
AM01472v1
6/10
0
10%
Doc ID 022225 Rev 1
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AM01473v1
STY100NM60N
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Package mechanical data
Table 9.
STY100NM60N
Max247 mechanical data
mm
Dim.
Min.
Typ.
A
4.70
5.30
A1
2.20
2.60
b
1.00
1.40
b1
2.00
2.40
b2
3.00
3.40
c
0.40
D
19.70
20.30
e
5.35
5.55
E
15.30
15.90
L
14.20
15.20
L1
3.70
4.30
Figure 8.
-
Max247 drawing
0094330_Rev_D
8/10
Max.
Doc ID 022225 Rev 1
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0.80
STY100NM60N
5
Revision history
Revision history
Table 10.
Document revision history
Date
Revision
14-Sep-2011
1
Changes
First release.
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STY100NM60N
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