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STY100NM60N N-channel 600 V, 0.025 Ω, 98 A, MDmesh™ II Power MOSFET in Max247 Preliminary data Features Order code VDSS @TjMAX RDS(on) max ID STY100NM60N 650 V < 0.029 Ω 98 A ■ Max247 worldwide best RDS(on) ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 1 2 3 Max247 Applications ■ Switching applications Figure 1. Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STY100NM60N 100NM60N Max247 Tube September 2011 Doc ID 022225 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www.bdtic.com/ST 1/10 www.st.com 10 Contents STY100NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 .............................................. 6 Doc ID 022225 Rev 1 www.bdtic.com/ST STY100NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage 25 V ID Drain current (continuous) at TC = 25 °C 98 A ID Drain current (continuous) at TC = 100 °C 74 A IDM (1) Drain current (pulsed) 392 A PTOT Total dissipation at TC = 25 °C 625 W Peak diode recovery voltage slope 15 V/ns VGS dv/dt (2) Tstg Parameter Storage temperature °C - 55 to 150 Max. operating junction temperature Tj °C 1. Pulse width limited by safe operating area. 2. ISD ≤98 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS. Table 3. Symbol Thermal data Value Unit Rthj-case Thermal resistance junction-case max 0.2 °C/W Rthj-amb Thermal resistance junction-ambient max 30 °C/W 300 °C Value Unit Tj Parameter Maximum lead temperature for soldering purpose Table 4. Symbol Avalanche characteriscics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax) TBD A EAS Single pulse avalanche energy (starting Tj=25 °C, ID=Iar, VDD=50) TBD mJ Doc ID 022225 Rev 1 www.bdtic.com/ST 3/10 Electrical characteristics 2 STY100NM60N Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage (VGS = 0) ID = 1 mA Min. Typ. Max. Unit 600 V IDSS VDS = 600 V Zero gate voltage drain current (VGS = 0) VDS = 600 V, TC=125 °C 10 100 µA µA IGSS Gate-body leakage current (VDS = 0) 100 nA 3 4 V 0.025 0.029 Ω Min. Typ. Max. Unit - pF pF pF VGS = ± 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Table 6. Symbol 2 VGS = 10 V, ID = 47 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - TBD TBD TBD Equivalent output capacitance VDS = 0 to 480 V VGS = 0 - TBD - pF RG Intrinsic gate resistance f = 1 MHz open drain - 2 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 98 A, VGS = 10 V (see Figure 3) - TBD TBD TBD - nC nC nC Ciss Coss Crss Coss(eq)(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS Table 7. Symbol td(on) tr td(off) tf 4/10 Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 300 V, ID = 49 A, RG = 2 Ω, VGS = 10 V (see Figure 4) (see Figure 7) Min. Typ. - TBD TBD TBD TBD Doc ID 022225 Rev 1 www.bdtic.com/ST Max. Unit - ns ns ns ns STY100NM60N Electrical characteristics Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Test conditions Min. Typ. Max. Unit - 98 392 A A ISD = 98 A, VGS = 0 - 1.6 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 48 A, di/dt = 100 A/µs VDD = 100 V (see Figure 4) - TBD TBD TBD ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 48 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 4) - TBD TBD TBD ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022225 Rev 1 www.bdtic.com/ST 5/10 Test circuits STY100NM60N 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 4. AM01469v1 Test circuit for inductive load Figure 5. switching and diode recovery times A A D.U.T. FAST DIODE B B Unclamped inductive load test circuit L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 6. Unclamped inductive waveform AM01471v1 Figure 7. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDS VDD 90% VGS AM01472v1 6/10 0 10% Doc ID 022225 Rev 1 www.bdtic.com/ST AM01473v1 STY100NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 022225 Rev 1 www.bdtic.com/ST 7/10 Package mechanical data Table 9. STY100NM60N Max247 mechanical data mm Dim. Min. Typ. A 4.70 5.30 A1 2.20 2.60 b 1.00 1.40 b1 2.00 2.40 b2 3.00 3.40 c 0.40 D 19.70 20.30 e 5.35 5.55 E 15.30 15.90 L 14.20 15.20 L1 3.70 4.30 Figure 8. - Max247 drawing 0094330_Rev_D 8/10 Max. Doc ID 022225 Rev 1 www.bdtic.com/ST 0.80 STY100NM60N 5 Revision history Revision history Table 10. Document revision history Date Revision 14-Sep-2011 1 Changes First release. Doc ID 022225 Rev 1 www.bdtic.com/ST 9/10 STY100NM60N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 Doc ID 022225 Rev 1 www.bdtic.com/ST