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STL70N4LLF5 N-channel 40 V, 0.0061 Ω, 18 A, PowerFLAT™ 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS(on) max ID STL70N4LLF5 40 V 0.0067 Ω 18 A (1) 1. The value is rated according to Rthj-pcb 1 ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses 2 3 4 PowerFLAT™ 5x6 Applications ■ Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. $ $ $ $ ' 3 3 3 "OTTOM6IEW 4OP6IEW !-6 Table 1. Device summary Order code Marking Package Packaging STL70N4LLF5 70N4LLF5 PowerFLAT™ 5x6 Tape and reel December 2011 Doc ID 15229 Rev 3 1/13 www.st.com www.bdtic.com/ST 13 Contents STL70N4LLF5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 Doc ID 15229 Rev 3 www.bdtic.com/ST STL70N4LLF5 1 Electrical ratings Electrical ratings . Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 22 V ID(1) Drain current (continuous) at TC = 25 °C 70 A ID (1) Drain current (continuous) at TC = 100 °C 44 A ID(2) Drain current (continuous) at Tpcb = 25 °C 18 A (2) Drain current (continuous) at Tpcb=100 °C 11.5 A ID IDM(2),(3) Drain current (pulsed) 72 A PTOT (1) Total dissipation at TC = 25 °C 60 W Total dissipation at Tpcb = 25 °C 4 W 0.03 W/°C -55 to 150 °C Value Unit PTOT (2) Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according to Rthj-c . 2. The value is rated according to Rthj-pcb. 3. Pulse width limited by safe operating area. Table 3. Thermal resistance Symbol Parameter Rthj-case Thermal resistance junction-case 2.08 °C/W Thermal resistance junction-pcb 31.3 °C/W Value Unit 9 A 1090 mJ Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec. Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) Doc ID 15229 Rev 3 www.bdtic.com/ST 3/13 Electrical characteristics 2 STL70N4LLF5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) ID = 250 µA Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 9 A Symbol Ciss Coss Crss Qg Qgs Qgd RG Min. Typ. Max. 40 Unit V VDS = 40 V, IDSS Table 6. 4/13 On/off states VDS = 40 V,TC = 125 °C 1 10 µA µA ±100 nA 1 V Ω Ω 0.0061 0.0076 0.0067 0.009 Min. Typ. Max. Unit - 1570 257 32 - pF pF pF - 12.9 3.9 5.3 - nC nC nC - 1.5 - Ω VGS= 4.5 V, ID= 9 A Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions VDS = 25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 18 A VGS = 4.5 V (see Figure 14) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Doc ID 15229 Rev 3 www.bdtic.com/ST STL70N4LLF5 Electrical characteristics Table 7. Symbol td(on) Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time tr td(off) tf Table 8. Symbol ISD Test conditions Min. Typ. Max. Unit - 14 42 37 5.2 - ns ns ns ns Min. Typ. Max. Unit VDD=15 V, ID= 9A, RG=4.7 Ω, VGS=10 V (see Figure 13) Source drain diode Parameter Test conditions Source-drain current - 18 A ISDM(1) Source-drain current (pulsed) - 72 A VSD(2) Forward on voltage ISD = 18A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A, trr Qrr IRRM di/dt = 100 A/µs, VDD= 25 V, TJ=150 °C - 27.2 24.5 1.8 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 15229 Rev 3 www.bdtic.com/ST 5/13 Electrical characteristics STL70N4LLF5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics !-V )$ ! S AI E AR ON 3 HIS NT X2$ I N TIO YMA A R E B /P ITED ,IM MS MS S 4J # 4C # 3INGLE PULSE Figure 4. )$ ! 6$36 Output characteristics !-V 6'36 !-V )$ ! 6$36 6 6 6 Figure 6. 6$36 Normalized BVDSS vs temperature !-V "6$33 NORM Figure 7. 6'36 Static drain-source on resistance !-V 2$3ON /HM )$! 6/13 4* # 6'36 Doc ID 15229 Rev 3 www.bdtic.com/ST )$! STL70N4LLF5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. !-V 6'3 6 6$$6 )$! Capacitance variations !-V # P& #ISS #OSS 1GN# Figure 10. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM #RSS 6$36 Figure 11. Normalized on resistance vs temperature !-V 2$3ON NORM 4* # 4* # Figure 12. Source-drain diode forward characteristics !-V 63$ 6 4* # 4* # 4* # )3$! Doc ID 15229 Rev 3 www.bdtic.com/ST 7/13 Test circuits 3 STL70N4LLF5 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDS VDD 90% VGS AM01472v1 8/13 0 10% Doc ID 15229 Rev 3 www.bdtic.com/ST AM01473v1 STL70N4LLF5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 15229 Rev 3 www.bdtic.com/ST 9/13 Package mechanical data Table 9. STL70N4LLF5 PowerFLAT 5x6 type S-C mechanical data mm Dim. Min. Typ. Max. A 0.80 1.00 A1 0.02 0.05 A2 b 0.25 0.30 0.50 D 5.20 E 6.15 D2 4.11 4.31 E2 3.50 3.70 e 1.27 e1 0.65 L 0.715 1.015 K 1.05 1.35 Figure 19. PowerFLAT 5x6 type S-C drawing 4OPVIEW "OTTOMVIEW 3IDEVIEW ?$?TYPE# 10/13 Doc ID 15229 Rev 3 www.bdtic.com/ST STL70N4LLF5 Package mechanical data Figure 20. PowerFLAT™ 5x6 recommended footprint (dimensions are in mm) 5.35 0.95 0.98 6.26 3.86 4.33 4.41 1.27 0.62 Footprint Doc ID 15229 Rev 3 www.bdtic.com/ST 11/13 Revision history 5 STL70N4LLF5 Revision history Table 10. 12/13 Document revision history Date Revision Changes 01-Dec-2008 1 First release 18-Jul-2011 2 Section 4: Package mechanical data has been modified: – Added Table 9: PowerFLAT 5x6 type S-C mechanical data – Added Figure 19: PowerFLAT 5x6 type S-C drawing – Added PowerFLAT™ 5x6 type C-B mechanical data – Added PowerFLAT™ 5x6 type C-B drawing – Added Figure 20: PowerFLAT™ 5x6 recommended footprint (dimensions are in mm). Minor text changes. 21-Dec-2011 3 Section 4: Package mechanical data has been modified. Doc ID 15229 Rev 3 www.bdtic.com/ST STL70N4LLF5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2011 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 15229 Rev 3 www.bdtic.com/ST 13/13