Download R6012ANJ

10V Drive Nch MOSFET
R6012ANJ
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
LPTS
10.1
4.5
1.24
2.54
0.4
0.78
2.7
5.08
(1) Gate
(2) Drain
(3) Source
1.2
3.0
1.0
13.1
9.0
7.25
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
1.3
(1) (2) (3)
Each lead has same dimensions
LPTL
zApplications
Switching
8.9
4.8
zPackaging specifications
Taping
Package
Type
Code
LPTS
TL
LPTL
TLL
Basic ordering unit (pieces)
(1) Gate
(2) Drain
(3) Source
zInner circuit
Symbol
Limits
Unit
Drain-source voltage
VDSS
600
V
Gate-source voltage
VGSS
±30
V
∗3
±12
A
∗1
±48
A
Drain current
Source current
(Body Diode)
Each lead has same dimensions
1000
zAbsolute maximum ratings (Ta=25°C)
Parameter
(1) (2) (3)
Continuous
ID
Pulsed
IDP
Continuous
IS
Pulsed
ISP
∗3
12
A
∗1
48
A
6
A
9.6
mJ
Avalanche Current
IAS
∗2
Avalanche Energy
EAS
∗2
Total power dissipation (Tc=25°C)
PD
100
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
∗1
(1)
(1) Gate
(2) Drain
(3) Source
(2)
(3)
∗1 Body Diode
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
zThermal resistance
Parameter
Channel to case
Symbol
Limits
Unit
Rth(ch-c)
1.25
°C/W
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1/5
2009.04 - Rev.A
Data Sheet
R6012ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
VGS=±30V, VDS=0V
V(BR)DSS
600
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
µA
VDS=600V, VGS=0V
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
−
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
RDS(on)
Forward transfer admittance
| Yfs |
∗
∗
Conditions
0.32
0.42
Ω
ID=6A, VGS=10V
3.5
−
−
S
ID=6A, VDS=10V
Input capacitance
Ciss
−
1300
−
pF
VDS=25V
Output capacitance
Coss
−
890
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
45
−
pF
f=1MHz
∗
−
30
−
ns
ID=6A, VDD 300V
∗
−
30
−
ns
VGS=10V
∗
−
90
−
ns
RL=50Ω
∗
−
35
−
ns
RG=10Ω
∗
−
35
−
nC
∗
−
7
−
nC
∗
−
15
−
nC
VDD 300V
ID=12A
VGS=10V
RL=25Ω / RG=10Ω
Turn-on delay time
td(on)
tr
Rise time
Turn-off delay time
td(off)
tf
Fall time
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.5
Unit
V
Conditions
IS=12A, VGS=0V
∗ Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
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2/5
2009.04 - Rev.A
Data Sheet
R6012ANJ
zElectrical characteristics curves
40
20
DRAIN CURRENT: ID (A)
10
1
Operation in this
area is limited
by RDS(ON)
7.0V
6.5V
20
6.0V
10
1
10
100
0
1000
GATE THRESHOLD VOLTAGE: VGS(th) (V)
DRAIN CURRENT : ID (A)
6
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
2
3
4
5
6
7
0.6
ID =12A
0.4
ID =6A
0
10
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
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○
40
50
0
1
10
2
1
0
50
100
15
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.4
ID = 6A
0.2
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
3/5
0.1
1
10
100
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
ID = 12A
100
0.01
DRAIN CURRENT : ID (A)
0.6
50
5
1
100
0
4
VGS= 10V
Pulsed
0.01
0.001
150
VGS= 10V
Pulsed
0
-50
3
Fig.3: Typical Output Characteristics(Ⅱ)
3
0
-50
2
DRAIN-SOURCE VOLTAGE: VDS (V)
4
0.8
5
30
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
5.0V
5
CHANNEL TEMPERATURE: Tc h (°C)
Ta=25°C
Pulsed
0
20
5
Fig.4 Typical Transfer Characteristics
0.2
10
VDS= 10V
ID = 1mA
GATE-SOURCE VOLTAGE : VGS (V)
0.8
6.0V
Fig.2: Typical Output Characteristics(Ⅰ)
10
1
5.5V
6.5V
10
DRAIN-SOURCE VOLTAGE: VDS (V)
VDS= 10V
Pulsed
0
7.0V
0
Fig.1 Maximum Safe Operating Aera
1
8.0V
15
VGS= 4.5V
0
DRAIN-SOURCE VOLTAGE : VDS ( V )
100
VGS= 4.5V
5.0V
10V
DC operation
Tc = 25°C
Single Pulse
0.01
0.1
PW=1ms
30
Ta= 25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
0.1
PW =100us
Ta= 25°C
Pulsed
8.0V
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
DRAIN CURRENT : ID (A)
10V
9.0V
DRAIN CURRENT: ID (A)
100
150
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
0.01
0.001
0.001
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
2009.04 - Rev.A
Data Sheet
R6012ANJ
10000
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
0.1
15
1000
0
0.5
1
100
Crs s
10
Ta= 25°C
f= 1MHz
VGS= 0V
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
1
SWITCHING TIME : t (ns)
REVERSE RECOVERY TIME: trr (ns)
Ta= 25°C
di / dt= 100A / µs
VGS= 0V
Pulsed
0.1
1
10
0
10
20
30
40
50
Ta= 25°C
VDD = 300V
VGS= 10V
R G= 10Ω
Pulsed
1000
td(off)
100
10
td(on)
tr
1
0.01
100
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
1
0
Fig.12 Dynamic Input Characteristics
REVERSE DRAIN CURRENT : IDR (A)
10
1000
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
tf
100
100
5
TOTAL GATE CHARGE : Qg (nC)
10000
10
Fig.14 Switching　Characteristics
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 53.0 °C/W
RESISTANCE : r (t)
NORMARIZED TRANSIENT THERMAL
10
Ta= 25°C
VDD = 300V
ID = 12A
RG= 10Ω
10 Pulsed
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
1000
Cis s
Cos s
1
0.01
GATE-SOURCE VOLTAGE : VGS (V)
VGS= 0V
Pulsed
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
100
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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c 2009 ROHM Co., Ltd. All rights reserved.
○
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2009.04 - Rev.A
Data Sheet
R6012ANJ
zMeasurement circuits
Fig.1 Switching time measurement circuit
Fig.2 Switching waveforms
IG(Const.)
Fig.3 Gate charge measurement circuit
Fig.5
Fig.4 Gate charge waveform
Avalanche measurement circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Fig.6
5/5
Avalanche waveform
2009.04 - Rev.A
Notice
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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