Download R5011ANJ

10V Drive Nch MOSFET
R5011ANJ
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
LPTS
10.1
4.5
1.24
2.54
0.4
0.78
2.7
5.08
(1) Gate
(2) Drain
(3) Source
1.2
3.0
1.0
13.1
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
4) Drive circuits can be simple.
5) Parallel use is easy.
9.0
7.25
1.3
(1) (2) (3)
Each lead has same dimensions
LPTL
8.9
4.8
zApplications
Switching
(1) Gate
(2) Drain
(3) Source
zPackaging specifications
Each lead has same dimensions
zInner circuit
Taping
Package
Type
(1) (2) (3)
Code
LPTS
TL
LPTL
TLL
Basic ordering unit (pieces)
∗1
1000
(1)
∗1 Body Diode
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
VDSS
500
V
Drain-source voltage
Gate-source voltage
Drain current
Pulsed
Source current
(Body Diode)
±30
V
∗3
±11
A
∗1
±44
A
11
A
∗1
44
A
5.5
A
8.1
mJ
VGSS
Continuous
ID
IDP
∗3
Continuous
IS
Pulsed
ISP
Avalanche current
IAS
∗2
Avalanche energy
EAS
∗2
Total power dissipation (Tc=25°C)
PD
75
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
(2)
(3)
(1) Gate
(2) Drain
(3) Source
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C
∗3 Limited only by maximum temperature allowed
zThermal resistance
Symbol
Limits
Unit
Rth(ch-c)
1.67
°C/W
Parameter
Channel to case
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c 2009 ROHM Co., Ltd. All rights reserved.
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1/5
2009.04 - Rev.A
Data Sheet
R5011ANJ
zElectrical characteristics (Ta=25°C)
Parameter
Min.
Typ.
Max.
Unit
IGSS
−
−
±100
nA
VGS=±30V, VDS=0V
V(BR)DSS
500
−
−
V
ID=1mA, VGS=0V
IDSS
−
−
100
µA
VDS=500V, VGS=0V
VGS(th)
2.5
−
4.5
V
VDS=10V, ID=1mA
−
Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
RDS(on)
Forward transfer admittance
| Yfs |
∗
∗
Conditions
0.38
0.5
Ω
ID=5.5A, VGS=10V
3.5
−
−
S
VDS=10V, ID=5.5A
Input capacitance
Ciss
−
1000
−
pF
VDS=25V
Output capacitance
Coss
−
400
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
35
−
pF
f=1MHz
∗
−
26
−
ns
VDD 250V, ID=5.5A
∗
−
28
−
ns
VGS=10V
td(off)
∗
−
75
−
ns
RL=45.5Ω
tf
∗
−
30
−
ns
RG=10Ω
Total gate charge
Qg
∗
−
30
−
nC
Gate-source charge
Qgs
∗
−
7
−
nC
Gate-drain charge
Qgd
∗
−
12
−
nC
VDD 250V
ID=11A
VGS=10V
RL=22.7Ω / RG=10Ω
Turn-on delay time
td(on)
Rise time
Turn-off delay time
tr
Fall time
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.5
Unit
V
Conditions
IS= 11A, VGS=0V
∗ Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/5
2009.04 - Rev.A
Data Sheet
R5011ANJ
zElectrical characteristic curves
20
10
10
PW=1ms
PW=100ms
1
DC operation
0.1
Tc = 25°C
Single Pulse
8.0V
15
7.0V
10
5.5V
5.0V
5
100
1000
VDS= 10V
Pulsed
10
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.001
3
4.5
6
0.8
0.7
0.6
0.5
ID= 11.0A
0.4
ID= 5.5A
0.3
0.2
0.1
30
40
5
5.0V
2
50
10
15
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3 Typical Output Characteristics(Ⅱ)
10
5
4
3
2
1
0
-50
0
50
100
VGS= 10V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
150
0.1
1
100
VGS= 10V
Pulsed
ID= 11.0A
0.6
0.4
ID= 5.5A
0.2
-50
100
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
1
0.8
10
DRAIN CURRENT : ID (A)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
0
0
0
6.0V
CHANNEL TEMPERATURE: Tch (°C)
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
Ta=25°C
Pulsed
20
VDS= 10V
ID= 1mA
GATE-SOURCE VOLTAGE : VGS (V)
1
10
6
Fig.4 Typical Transfer Characteristics
0.9
4
Fig.2 Typical Output Characteristics(Ⅰ)
GATE THRESHOLD VOLTAGE: VGS(th) (V)
100
1.5
6.5V
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.1 Maximum Safe Operating Aera
0
5.5V
7.0V
6
0
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
10
0
50
100
150
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
3/5
FORWARD TRANSFER ADMITTANCE :
|Yfs| (S)
1
DRAIN-SOURCE VOLTAGE : VDS ( V )
1
10V
8.0V
VGS= 4.5V
0
0.1
DRAIN CURRENT : ID (A)
6.0V
6.5V
Ta= 25°C
Pulsed
8
VGS= 4.5V
0.01
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on) (Ω)
10V
Ta= 25°C
Pulsed
PW=100us
DRAIN CURRENT: ID (A)
Operation in this
area is limited
by RDS(ON)
DRAIN CURRENT: ID (A)
DRAIN CURRENT : ID (A)
100
VDS= 10V
Pulsed
10
1
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
0.1
0.01
0.01
0.1
1
10
100
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
2009.04 - Rev.A
Data Sheet
VGS= 0V
Pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
1000
Ciss
Coss
100
Crss
Ta= 25°C
f= 1MHz
VGS= 0V
10
1
0.01
0
0.5
1
1
10
100
1000
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs.
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
10
5
0
10
20
30
40
50
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
10000
1000
SWITCHING TIME : t (ns)
REVERSE RECOVERY TIME: trr (ns)
Ta= 25°C
VDD= 250V
ID= 11A
RG= 10Ω
Pulsed
0
0.1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
100
Ta= 25°C
di / dt= 100V / µs
VGS= 0V
Pulsed
Ta= 25°C
VDD= 250V
VGS= 10V
RG= 10Ω
Pulsed
tf
1000
td(off)
100
10
td(on)
tr
1
10
0.1
1
10
0.01
100
0.1
REVERSE DRAIN CURRENT : IDR (A)
1
10
100
DRAIN CURRENT : ID (A)
Fig.13 Reverse Recovery Time
vs.Reverse Drain Current
NORMARIZED TRANSIENT THERMAL
RESISTANCE : r (t)
GATE-SOURCE VOLTAGE : VGS (V)
10
15
10000
100
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
R5011ANJ
Fig.14 Switching Characteristics
1
0.1
Ta = 25°C
Single Pulse : 1Unit
Rth（ch-a）（t） = ｒ（t）×Rth（ch-a）
Rth（ch-a） = 45.8°C/W
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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c 2009 ROHM Co., Ltd. All rights reserved.
○
4/5
2009.04 - Rev.A
Data Sheet
R5011ANJ
zSwitching characteristics measurement circuit
Pulse width
VGS
ID
VDS
90%
50%
10%
VGS
VDS
RL
50%
10%
D.U.T.
VDD
RG
10%
90%
td(on)
90%
td(off)
tr
ton
tf
toff
Fig.1-2 Switching waveforms
Fig.1-1 Switching time measurement circuit
VG
VGS
ID
VDS
RL
Qg
VGS
D.U.T.
IG(Const.)
Qgs
Qgd
VDD
RG
Charge
Fig.2-1 Gate charge measurement circuit
VGS
IAS
Fig.2-2 Gate charge waveform
VDS
VD(BR)DSS
D.U.T.
L
IAS
RG
VDD
EAS =
2
L IAS
VD(BR)DSS
VD(BR)DSS - VDD
Fig.3-2 Avalanche waveform
Fig.3-1 Avalanche Measurement circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
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1
2
5/5
2009.04 - Rev.A
Notice
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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R0039A