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Types of Chalcogenide Resistive Memory ï® Ion-Conducting ï® Ions (e.g. Ag+ and Cu+) are added to a chalcogenide glass ï® Application of electric field causes formation of a conductive channel through glass (Kozicki, M.N. et al., Microelectronic Engineering 63, 485 (2002)) ï® Thermally Induced Phase Change ï® Crystalline to amorphous phase change; low R to high R shift ï® High current heats material to cause phase change (S.R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968))