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Introduction of Auxiliary Emitter Resistors •The introduction of REx (≈ 10 % of RGx) leadsC to – Limitation of equalising currents i ≤ 10 A – Damping of oscillations G RE1 RE2 REn AE i ≤ 10 A V1 V2 Vn E Introduction of Auxiliary Emitter • The introductionResistors of REx leads also to a negative feedback: – The equalising current i leads to a voltage drop VREx at the Emitter resistors REx fast IGBT slow IGBT C G AE VRE2 VRE1 i E Introduction of Auxiliary Emitter Resistors The introduction of REx leads also to a negative feedback: The voltage drop VRE1 reduces the gate IGBT and decreases slow IGBT voltage of the fastfastIGBT C switching speed. therewith its The voltage drop VRE2 increases the gate voltage of the G slow IGBT and makes it faster. VRE1 VRE2 During switch off: vice versa. AE i E Additional proposals •The introduction of Z-Diodes – prevents over voltages at the gate contacts. C – Therefore these clamping diodes must be placed very close to the module connectors G AE E Additional proposals • The introduction of Shottky-Diodes parallel to REx – helps to balance the emitter voltage during short circuit case. – Dimensioning ≈ 100V, 1A. Multi-levelinverter application Topology of a multi level inverter (Three step) Cells in series Robicon princip Rectifier Circuit : Simple diode rectifier with various three-phase windings 2Q Drive capability Patent rights: Robicon Semiconductors in use: standard IGBT + Diode arrangement Transformer in use: Different secondary windings, STAR, DELTA, Z, Number of Cells: number of cell in series 100% (as by Robicon) Multi cell system like Robicon Vienna rectifier with H-brigde Rectifier Circuit :Vienna rectifier 2Q Drive only Patent rights: Zener and Prof Kolar ETH Zürich Semiconductors in use: Not standard IGBT + Diode arrangement Transformer in use: All secondary windings are equal Number of Cells: Same number of cell as by Robicon Double booster with Multi level inverter Rectifier Circuit : Three-phase PFC with doable booster 2Q Drive only Patent rights: SEMIKRON International Semiconductors in use: standard IGBT + Diode arrangement Transformer in use: All secondary windings are equal; Number of Cells: 1/2 number of cell as by Robicon New SEMiX Flexibility Multilevel switch New SEMiX Module with Semikron Patent Halfbridges 2 x Choppers = Multi-Level-Modul Multi-Level-leg with standard SEMiX module - Terminal GB module DC bus capacitor + Terminal Multi Level Inverter • Why multi level inverter – All Semiconductors must have the half blocking voltage – With Multi Level Topologies are high output frequency achievable • Small output filter • 3 potentials available (+/-/centre point) • Minimization of rotor losses caused by current ripple • Through asynchronous clocking higher output frequencies achievable – EMC behavior • Potential difference only 50% of EMC consideration during development of inverter EMC Standards - Generic Previou s no. Present no. Explanations and Remarks EN 50081-1 EN 50081-1 Generic emission standard – Residential, commercial and light industry EN 50081-2 EN 50081-2 Generic emission standard – Industrial environment EN 50082-1 IEC/EN 610006-1 Generic immunity standard - Residential, commercial and light industry EN 50082-2 IEC/EN 61000-6-2 Generic immunity standard – Industrial environment - CISPR/IEC 61000-6-3 Generic standards – Emission standard for residential, commercial and light industrial environments - IEC 61000-6-4 Generic standards – Emission standard for industrial environments EMC Standards - Immunity Previous Present Explanations and remarks Tests no. no. IEC 801-2 IEC/EN 61000-4-2 Electrostatic discharge immunity test IEC 801-3 ENV 50140 IEC/EN 61000-4-3 Radiated, radio-frequency, electromagnetic field immunity test ENV 50204 IEC/EN 61000-4-3 Radiated electromagnetic field from digital radio telephones – Immunity test IEC 801-4 (1988) IEC/EN 61000-4-4 Electrical fast transient/burst immunity test IEC 801-5 (draft) ENV 50142 IEC/EN 61000-4-5 Surge immunity test IEC 801-6 (draft) ENV 50141 IEC/EN 61000-4-6 Immunity to conducted disturbances, induced by radio-frequency fields IEC/EN 61000-4-8 IEC/EN 61000-4-8 Power frequency magnetic field immunity test IEC/EN 61000-4-9 IEC/EN 61000-4-9 Pulse magnetic field immunity test EMC Standards - Emission Previous PresentMeasurements no. Explanations and remarks no. IEC 555-2 EN 60555-2 IEC/EN 61000-3-2 Limits for harmonic current emissions (equipment input current ≤ 16 A per phase) IEC 555-3 EN 60555-3 IEC/EN 61000-3-3 Limitation of voltage fluctuations and flicker in low-voltage supply systems for equipment with rated current ≤ 16A CISPR 11/EN 55011 CISPR 11/EN 55011 Industrial, scientific and medical (ISM) radiofrequency equipment – Electromagnetic disturbance characteristics – Limits and methods of measurement CISPR 14/EN 55014 CISPR 14/EN 55014 Limits and methods of measurement of radio disturbance characteristics of electrical motoroperated and thermal appliances for household and similar purposes, electric tools and similar electrical apparatus CISPR 22/EN 55022 CISPR 22/EN 55022 Limits and methods of measurement of radio disturbance characteristics of information technology (IT) equipment Motor cable - correct EMI rules I • Never put input and output together – Input on top of the inverter – Output on bottom of the inverter • Don’t use painted housings – bad connection • Connect the isolation of transformers to ground EMI rules II • Use snubber capacitors to avoid voltage drop in the DC-Bus voltage. Voltage drop will generate a very high dv/dt • Use only freewheeling diodes with a soft recovery behavior • Multi layer technology is avoiding stray inductance Fast switching IGBTs • IGBTs generates a very high dv/dt – Long motor cable • Isolation problems of the motor wire • Over voltage on the motor terminal through reflections • Installation of special motor filter – Capacitors generate leakage current • Sensitive short circuit monitoring • Higher switching losses • Installation of output reactor EMC - Checklist • Did you connect all heatsinks with ground (PE)? – use a big surface for the connection (HF-current) – star connection – No painted surface - clean • Did you install cores in the flatcables between controllerboard and power stage • Did you design a filter board between power stage and controller board? • Did you use snubber capacitors SEMiX and Skyper The platform idea Sixpack Sixpack Modula r IPM Springs for snap-on driver Pins for soldered driver The platform family (600 V, 1200 V, 1700 V) All switch topologies available Half bridge Sixpack Chopper • Reduced to basic functions • 30% less components • => less costs • 2 IGBT-Driver versions: SKYPER™ + SKYPER New driver concept ™ PRO “SKYPER” How to handle a IGBT Information How can we protect the gate? Information Gate Emitter Resistor Gate clamping IGBT Gate protection How should we calculate the driver? Proposal • Which gate driver is suitable for the module SKM 200 GB 128D ? Design parameters: fsw = 10 kHz Rg = 7 Example for design parameters • The suitable gate driver must provide the required Gate charge (QG) Average Gate current (IoutAV) pulse current (Ig.pulse) Demands for the gate driver • Gate charge (QG) can be determined from fig. 6 of the SEMITRANS data sheet The typical turn-on and turn-off voltage of the gate driver is 15 VGG+ = +15V VGG- = -8V QG = 1390nC -8 139 0 Determination of Gate Charge • Calculation of average current: • IoutAV = P / U • with P = E * fsw = QG * U * fsw • U = +Ug – (-Ug) IoutAV = QG * fsw = 1390nC * 10kHz = 13.9mA Calculation of the average current • Examination of the peak gate current with minimum gate resistance E.g. RG.on = RG.off = 7 Ig.puls 2.3A ≈ U / RG = 23V / 7 = Calculation of the peak gate current Power explication of the Gate Resistor • P tot – Gate resistor – Ptot Gate The problem occurs when the user forgets about the peak power rating of the gate resistor. peak power rating of many "ordinary" SMD resistors is quite small. resistorThe outresistors AV available with higher peak power There are SMD ratings. For example, if you take an SKD driver apart, you will see that the gate resistors are in a different SMD package to all the other resistors (except one or two other places that also need high peak power). The problem was less obvious with through hole components simply because the resistors were physically bigger. =I x U – More information: The Philips resistor data book has a good section on peak power ratings. • The absolute maximum ratings of the suitable gate driver must be equal or higher than the applied and calculated values Gate charge QG = 1390nC Average current IoutAV = 13,9mA Peak gate current Ig.pulse = Choice of the suitable gate 2.3A driver • According to the applied and calculated values, the driver e. g. SKHI 22A is able to drive SKM200GB128D Calculated and applied values: • Ig.pulse = 2.3A @ Rg = 7 • IoutAV = 13.9mA • fsw = Comparison with the 10kHz • VCE = parameters in the driver1200V data