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An infrared probe of charge injection in polymer field effect transistors D.N. Basov, UCSD ACS PRF# 42258-AC10 IR imaging of charge injection in organic FETs based on poly(3-hexylthiophene) (P3HT). A: top left panel: a schematic of the cross-section of organic FETs; bottom panel: a photograph of a FET device. B: the variation of carrier density away from the injection contacts in the area shown by the square in A in a TiO2 based FET. C: the gate-voltage-induced infrared absorption spectra of the device. Adapted from Z. Q. Li, G. M. Wang, N. Sai, D. Moses, M. C. Martin, M. Di Ventra, A. J. Heeger, and D. N. Basov, “Infrared Imaging of the Nanometer-Thick Accumulation Layer in Organic Field-Effect Transistors”, Nano Letters 6, 224 (2006). Theoretical analysis allows one to infer the voltage dependence of the electronic mobility directly from these images: A. D. Meyertholen, Z. Q. Li, D. N. Basov, and M. M. Fogler, M. C. Martin , G. M. Wang, A. S. Dhoot, D. Moses, and A. J. Heeger “Concentration-dependent mobility in organic field-effect transistors probed by infrared spectromicroscopy of the charge density profile” Appl. Phys. Lett. 90, 222108 (2007).