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Use of Data Analysis and TCAD
Simulations to Understand the
Characteristics and Reliability of
High Voltage MOS Transistors
Jone F. Chen
Department of Electrical Engineering and
Institute of Microelectronics,
National Cheng Kung University, Tainan, Taiwan
Purpose
• High voltage metal-oxide-semiconductor (MOS)
transistors are widely used in smart power
management integrated circuits (IC), liquid-crystal
display (LCD) drivers, and NAND flash memory
periphery circuitry because of the compatibility to be
integrated into standard complementary metal-oxidesemiconductor (CMOS) process.
• Since high voltage MOS transistors are operated
under high voltage, breakdown voltage (VBD) is a
critical device parameter and hot-carrier induced
device degradation is an important reliability concern.
• This work reports analysis of VBD and hot-carrier
induced device degradation in high voltage MOS
transistors with varied process in drift region.
2
Outline
• Off-state Breakdown
• Hot-carrier Induced Degradation
• TCAD Simulations
• Device Description
• Results and Discussions
• Conclusions
3
Off-state Breakdown
• High E-field in the junction causes electron/hole pair
generation. This avalanche multiplication results in
breakdown.
4
Hot-carrier Induced Degradation
• Carriers accelerate in high E-field region and gain
sufficient energy to create damage in gate oxide or
oxide/Si interface, degrading device characteristics.
6
5
Fresh
Stressed
Id (mA)
4
3
2
1
0
0.0
0.4
0.8
1.2
Vd (V)
1.6
2.0
5
Hot-carrier Stress Procedure
• Stressing were carried out at high drain voltage and
interrupted periodically to measure ID degradation.
6
Technology Computer-Aided
Design (TCAD) Simulations
About TCAD
TCAD combines two kinds of tools:
Core tools in charge of running different parts of simulations.
Interactive tools are which users manage their settings.

ATHENA
DeckBuild
Structure
File
Command
File
ATLAS
Device
Simulator
Runtime
Output
Log Files
Solution
Files
TonyPlot
Visualization
Tool
7
Device Description
• High voltage MOS transistors were fabricated by an
advanced CMOS compatible process. The length of
gate and N- drift region are 2 mm and 1.2 mm,
respectively.
• Four devices (A, B, C, D) were fabricated. A is the
control device. B, C, D are implanted with BF2 with
low, medium, and high doping levels in N- drift region.
8
Net Doping
• Device D has less net doping due to BF2 implant in
drift region.
A
D
9
VBD Results
• Device D has the highest VBD. Higher BF2 implant
dosage results in higher VBD .
10
VBD Analysis
• TCAD simulations suggest that higher VBD in device D
is due to the absence of high E-field in drift region.
A
D
11
Hot-carrier Stress Results
• Device D has the greatest ID degradation. Higher BF2
implant dosage results in higher ID degradation.
12
Hot-carrier Stress Analysis
• TCAD simulations show that the current-flow path in
device D is closer to Si-SiO2 interface. The effect of hotcarrier induced damage on ID degradation is greater,
leading to enhanced ID degradation in device D.
A
D
13
Conclusions
• BF2 implant in drift region of high voltage
MOS transistors results in higher VBD.
• BF2 implant in drift region of high voltage
MOS transistors enhances hot-carrier
induced device degradation.
• Care should be taken in determining drift
region process because a trade-off between
VBD and hot-carrier induced device
degradation is observed.
14
Thank you for
your Attention