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Slide 1 Chip level EMC measurements and simulations “Impact of Communications Technology to EMC“, COST 286 Workshop Vladimir Čeperić Hrvoje Marković Adrijan Barić Faculty of Electrical Engineering and Computing, University of Zagreb Split, 12 December 2005 University of Zagreb Chip level EMC measurements and simulations Slide 2 • European research program ROBUSPIC (ROBUst mixed signal design methodologies for Smart Power ICs). • UZAG’s focus points: – Development of parasitic extraction procedures suitable for EMC (electro-magnetic compatibility) analysis – Identification and modelling of EME (electro-magnetic emission) sources and analysis of EMI (electro-magnetic immunity) – Methodology for full-chip smart-power EMC simulation Split, 12 December 2005 University of Zagreb Outline Slide 3 • Integrating EMC simulations in design flow • Extraction and influence of PWR/GND parasitics • EMC measurements system (IEC 62132-4 and IEC 61967-4) • EMC test chip • EMC optimizations • Conclusion Split, 12 December 2005 University of Zagreb Design flow System level architecture design & component spec. PWR/GND lines/core of the circuit separation Electrical circuit design RC extraction of the core (Assura, ...) RC (RLC) extraction of PWR/GND lines Physical pattern layout MOR RC/RLC parasitic extraction & EMC simulations Measurement & verification Spice netlist EMC simulations Split, 12 December 2005 University of Zagreb The influence of the PWR/GND parasitics on the the emission levels Slide 5 Comparison of invertor module and invertor module with HFSS extracted PWR/GND structure Split, 12 December 2005 University of Zagreb Influence of the package SOIC8 package NEED TO CONSIDER PACKAGING PARASITICS! Split, 12 December 2005 University of Zagreb Slide 6 Cadence Interface in Skill language For conducted EME (IEC 61967-4) - automatic generation of the Spectre netlist(s) with implementation of the 1 Ohm method - transient simulations in Spectre - manipulation of the results to determine the spectrum - display of the results and automatic determination of the emission levels For EM immunity (IEC 62132-4) - Spectre analyses for defined input power range - determination of the input power which causes malfunction - display of the results Split, 12 December 2005 University of Zagreb Slide 7 IEC 62132-4 for the measurement of EM immunity with direct RF power injection method - HTVD LIN RC load of the BUS, R=1 kOhm (to VBAT) and C=1 nF to GND Operating at 20.0 kbit/sec, VBAT = 13.7 V, Input frequency f=1 MHz Split, 12 December 2005 University of Zagreb EMC measurement system Slide 9 EME and EMI HTVD LIN interface measurement system Split, 12 December 2005 University of Zagreb HTVD – LIN interface EMC measurements Slide 10 EME measurements- Voltage over 1 Ohm (IEC 61947-4) – Matlab measuring automatization: – EME_EMI_measure_GPIB.m script BUS TxD RxD Split, 12 December 2005 EMI measurements - DPI method (IEC 62132-4) University of Zagreb HTVD – LIN interface 1 Ohm method measurement Split, 12 December 2005 simulation University of Zagreb EMC test chip Slide 12 Chip for EMC testing: high voltage and low voltage parts - ams C35/H35 digital conducted EME testing structure (to evaluate the influence of backannotation) LIN interface (conducted EME and EMI) analog LC oscillator (conducted EME, package parasitics model evaluation) Split, 12 December 2005 University of Zagreb EMC test chip Slide 13 Chip for EMC testing: two different packages used to evaluate package influence on EME and EMI CLCC84 (Ceramic Leadless Chip Carrier) JLCC84 (J-Leaded Ceramic Chip Carrier) Split, 12 December 2005 University of Zagreb EMC test chip Slide 14 Chip for EMC testing: conducted EME testing structure LIN1, LIN2 LC oscillator1, LC oscillator2 Split, 12 December 2005 University of Zagreb Conducted EME testing structure Conducted EME test structure enables: 1. Independent switching of 96 blocks 2. Input of each block can either be common input signal or output of previous block 3. Different widths of PWR/GND rails 4. Different number of PWR/GND refreshes 5. Output buffers with different output currents can be enabled Split, 12 December 2005 University of Zagreb Slide 15 QUAD LC oscillator and VCO • • • • • High voltage (AMS H35 CMOS technology) Cross-coupling increases significantly the precision of the oscillation frequency Bond wires provide a resonant tank with high Q conducted EME simulation and measurement Bond wires used as inductance – package parasitics model evaluation VCO Split, 12 December 2005 University of Zagreb Slide 16 LIN interface Slide 17 • LIN interface is design in high voltage technology (50V) • Design is tested for EM emission and EM immunity LIN interface from LIN2.0 standard ( Figure 3.1 ) Split, 12 December 2005 University of Zagreb LIN interface EME optimization – Matlab script: EmissionLeveloptimization.m Before optimization: C-10-o After optimization: C-12-m Optimization parameters: voltage levels on BUS, emission level of LIN interface, width, length and number of fingers of the high voltage transistor at TxD input Split, 12 December 2005 University of Zagreb LIN interface EMS optimization Matlab script: ImmunityOptimization.m • Psin source connected to BUS pin via 4.7nF capacitor f1=150kHz, f2=1MHz, dBm=20 Without optimization: With optimization: max: td1=6.0755e-06, td2=5.691e-06 max: td1=5.2535e-06, td2=5.691e-06 duty cycle min=0.4098 duty cycle min=0.4278 0.42793 Optimization parameters: duty cycle and time delay (LIN 2.0 standard), duty cycle max=0.4254 duty cycle max= width, of the 10 transistors in Schmitt trigger Split, 12 December 2005 University of Zagreb Conclusion Slide 20 • EMC simulations can be incorporated into design flow • Package and PCB parasitics have to be considered • EMC measurement system according to IEC 62132-4 and IEC 61967-4 standards is being built • EMC test chip enables easy validation of EMC simulations vs. measurements – package model validation – comparison of 3D EM simulations vs. RC extraction simulations • Circuit optimizations wrt. EMC behavior are performed Split, 12 December 2005 University of Zagreb