Download CISSOID Product Selector Guide.

High-Temperature
& High-Reliability Semiconductors
Product Selector Guide // April 2013
CISSOID // PRODUCT SELECTION GUIDE
1
Table of Contents
POWER SUPPLY STAR: Voltage Regulators and Voltage References
2
VOLCANO: DC-DC Converters
2
POWER CONVERSION TITAN: Power Drivers
8
TITAN: Isolated Transceiver
12
TITAN: HADES® Half-Bridge 1200V Isolated Gate Driver 14
DISCRETE PLANET: Transistors, Diodes & Switches
18
SIGNAL CONDITIONING GEMSTONE: Amplifiers
22
RIVER: Mixed Signal ICs
24
GALAXY: 74xx Logic Family
25
PULSAR: Clock Generator & Timer
26
CISSOID
is the leader in high temperature semiconductor
Whether the ambient temperature is low but the power dissipation
solutions, delivering standard products and
heats up the chips, or in high temperature environments, CISSOID
custom solutions for power management, power conversion and signal
products enable energy, weight and cost savings in lighter, cooling-
conditioning in extreme temperature and harsh environments. CISSOID
free and more compact electronic systems. They are used in mission-
provides high reliability products guaranteed from -55°C to +225°C
critical systems as well as in applications requiring long term reliability.
and commonly used outside that range, from cryogenic lows to upper
CISSOID supplies leaders in the Oil&Gas, Aeronautics, Industrial and
extremes. Automotive markets.
Extended Range of Temperature
°C
°F
400
752
225
437
Extreme tests by NASA on CISSOID products
CISSOID products
125
257
85
70
185
158
0
32
-40
-55
-40
-67
-200 -328
Military standards
Industrial standards
Commercial standards
Cissoid products have guaranteed
specification from -55°C to +225°C
and from -55°C to +175°C.
Extreme tests by NASA
demonstrated reliable operation
from -195°C to +400°C.
CISSOID ICs, the Industry’s Most
Reliable Semiconductors
Expected Lifetime:
15 Years at 175°C
5 Years at 225°C
CISSOID // PRODUCT SELECTION GUIDE
1
POWER SUPPLY
STAR Voltage Regulators and Voltage References
STAR family includes a range of linear voltage regulators that can be used in a variety of applications
that present either a high ambient temperature, and / or that see their lifetime impacted by the elevation
of the junction temperature due to the self dissipation within the component. Both fixed voltage and
adjustable voltage regulators are available.
It also includes includes two voltage reference ICs with fixed voltages of 2.5V to 12V, with 3mA and
25mA throughputs.
 -55°C to 225°C junction temperature (operation beyond this range)
 Best accuracy in the industry on the temperature range
 Highest reliability & lifetime: > 1 order of magnitude gain compared to standard silicon products
VOLCANO DC Converter ICs & Reference Designs
VOLCANO family includes a range of turnkey DC-DC converter designs that can be used for immediate
evaluation and possible adaptation of the electrical features. It is a quick path for the design of hightemperature switched-mode power supplies and seamless integration on a PCB or in a Multi-Chip
Module.
Each DC-DC converter technology (VESUVIO®; EREBUS® or STROMBOLI®) is based on the chipset
MAGMA-HYPERION (PWM controller and half-bridge driver), and includes a demonstration board, a datasheet with
detailed electrical schematic, Bill-of-Material, Application Note, 1 User’s License and 5 hours of engineering support.
Common Features
 Evaluation boards validated from -55°C to +175°C (ambient temperature)
 Active components qualified from -55 to +225°C (junction temperature)
 Evaluation boards based on 200°C polyimide PCB and 175°C passive components
2
STAR: Linear Voltage Regulators -55°C to +225°C
Product Name
VOUT
VIN Max
IOUT Max
Static current
consumption
Total
Accuracy
Min Dropout
Positive Regulators
CHT-LDOS-xxx [1]
2.5V, 3.3V, 5V, 5.5V, 9V, 10V, 12V,
13V & 15V (Fixed)
20V
1A
3.15mA
1V
30V
1A
3.3mA
1V
1.2V to 3.3V (adjustable)
5.5V
500mA
1mA
0.9V
±5%
1.2V to 24V (adjustable)
30V
100mA
1.1mA
1.7V
±5%
CHT-LDN-025
-2.5V (Fixed)
-25V
100mA
CHT-LDN-xxx
-3.3V, -5V, -5.5V, -9V, -10V,
-12V, -13V & -15V (Fixed)
-30V
1A
2.63mA
-1.5V
±2%
CHT-LDNS-xxx
-2.5V, -3.3V, -5V, -5.5V, -9V,
-10V, -12V, -13V & -15V (Fixed)
1A
3.5mA
-2V
-2% / +3%
CHT-LDOP-xxx
NEW CHT-VEGA
COMING soon CHT-RIGEL
±4%
Negative Regulators
-1.5V
CHT-BG03M: The Industry
Standard for High-Temperature
Voltage Reference
[1] The “xxx” code ending the P/N represents the nominal voltage in tenths of volt. e.g. CHT-LDO-033 = 3.3V positive regulator. [2] 5V mode, typical.
STAR: Voltage References -55°C to +225°C
Product Name
VOUT
VIN Max
Static current
consumption
IOUT Max
Min Dropout
Total Accuracy
CHT-BG3M-xxx [1]
2.5V; 3.3V; 5V; 9V; 10V or 12V (Fixed)
25V
3mA
700µA
1.5V / 2.5V
±2%
CHT-RUBY
5V
20V
25mA
700µA
2.0V
±2%
Drift
40mV/°C
Package
TO39
CSOIC16
[1] The “xxx” code ending the P/N represents the nominal voltage in tenths of volt.
VESUVIO®
EREBUS®
1.2V to
0.9xVin
EREBUS®
STROMBOLI®
STROMBOLI®
Up to 25V (single
or symetrical ± )
POUT Max
Efficiency
Switching
frequency
Line
Regulation
Topology
UVLO
IOUT Max
X
S.C. Protection
+0.9V to +3.3V
VIN Range
Sync.
Mode
Preliminary YELLOWSTONE
VOUT
Soft Start
Product Name
Isolation
VOLCANO: DC-DC Converter Technologies -55°C to +225°C
X
X
Eval.
Board Standard
Configuration
+3V to +5.5V
500mA
1.65W
Up to 90%
1.5MHz
-
Buck
X
Contact CISSOID
6V to 30V
2A [1]
50W
Up to 93%
230kHz
<1.5mV/V
Buck
X
X
12V to 40V
2A / 4A /
8A [2]
100W
Up to 90%
230kHz
<1.5mV/V
Buck
X
X
X
5V / 2A Output
12V to 50V
2A / 4A /
8A [2]
75W
Up to 90%
230kHz
<1.5mV/V
Buck
X
X
X
5V / 2A Output
15V to 40V
3A
50W [3]
Up to 82%
150kHz
-20ppm/V
Flyback
X
X
X
±12V / 1A Outputs
150V to 350V
3A
150W [3]
Up to 82%
150kHz
-20ppm/V
Flyback
X
X
X
±12V / 1A Outputs
5V / 2A Output
[1]: Higher currents: Contact CISSOID. - [2]: Erebus output current is scalable to 4A and 8A. -[3] : For Stromboli with Pout > 25W, a different transformer will be required.; impact on size should be expected.
CISSOID // PRODUCT SELECTION GUIDE
3
VOLCANO DC-DC Converter Technologies - Power Efficiency Curves
EREBUS
V
T ambient = -55°C
125°C
200°C
60
50
70
60
V
40
n=
Vi
T ambient = -55°C
125°C
200°C
50
40
40
30
0
200
400
600
800
1000
1200
1400
1600
1800
30
2000
80
70
V
0V
=2
n
Vi
150
80
Vin=
70
90
0V
0V
3
in=
1V
=1
Vin
60
50
T ambient = 25°C
150°C
225°C
=35
80
Efficiency [%]
Efficiency [%]
90
0V
=2
n
Vi
100
Efficiency [%]
V
=7
Vin
90
STROMBOLI
100
Vin
VESUVIO
100
40
30
0
200
400
600
800
1000
1200
1400
1600
1800
2000
300
400
500
Load Current [mA]
Load Current [mA]
VOLCANO CHT-MAGMA (PWM Controller)
600
700
800
900
1000
Load Current [mA]
 Junction temperature: -55°C to 225°C
 Input voltage feedforward compensation
MAGMA is a single chip, high-temperature Pulse Width Modulation (PWM)
controller with voltage mode control and maximum duty cycle up to 90%.
 VIN: 6V to 30V
 Voltage reference: 2.5V with 0.5mV/V
line regulation and 0.25mV/°C drift
VDD
ENABLE
Comp
OPA
UVLO
CK
CHT-MAGMA
CKOUT
4
PVDD
PWMN
PGND
CISSOID // PRODUCT SELECTION GUIDE
PGTH
DISCHARGE
THRESHOLD
VDD
S CLR Q
VDD
Oscillator
SYNC
PWMEN
VREF
PVDD
PWM
PGND
Comp
R SET Q
or external
stand-by (150µA@225°C)
VDD
SWT
 Clock: 50 to 500kHz Internal
 Power good, output enable,
PGTH
PG
SOFTST
COMP
LDO
5V
AVDD
VDD
V REF
2.5V
FB
VIN
CHT-MAGMA has been awarded one of the “100-hot products of the year” (EDN, 2009),
and became an industry standard for high temperature power converter designs.
 Companion chip: CHT-HYPERION
(half-bridge driver)
 Packages: CDIL28 & CSOIC28
 Applications: SMPS, PoL
and DC/DC converters
OE
1100
VOLCANO EVK-FUJI - Triple Power Supply - REF DESIGN & EVALUATION KIT
FUJI is a DC-DC converter / triple output Point-of-Load suitable to generate 3 standard voltages +5V; +3.3V and +1.8V to any embedded circuitry. It is offered in
the form of an Evaluation Kit including a complete Application Note, electrical schematic and bill of materials. It allows immediate integration into an electronic
design with high temperature requirements or into an MCM hybrid project. Availability: 2013
+ 5V
VIN
+ 3.3V
 Non-isolated topology (Flyback)
 Output Power: up to 2W
+ 1.8V
 Based on:
 Eval Board qualified from -55 to
GND
1.00" (25.4 mm) x 3.0” (76.2 mm)
> CHT-MAGMA
+175°C (ambient)
> CHT-SNMOS
 300°C Polyimide PCB
> CHT-NMOS8001
 Active components all qualified from
-55 to +225°C (junction)
 Up to 75% Typ. Efficiency
 Vin range: +10V to +28V
 225°C Transformer
 Triple output Voltage: +5V; 3.3V; 1.8V
 Dimensions: 1’’ x 3’’
Application NOTE POWER SUPPLY FOR PMT EXCITATION (PHOTOMULTIPLIER TUBE HIGH VOLTAGE GENERATOR)
PMT signal
PMT
 Temperature range: -55°C to +225°C
 VIN = 24V Typ. / VOUT = 500V to 1,500V
HV
Supply
 VOUT controllable by analog input 0~10V
VOUT
PWM
Controler
 IOUT Max: 100µA
VDDIN: 24V Typ.
 Non-isolated Flyback topology
 Ref Design based on CHT-MAGMA
0-10V
VOUT Control
CISSOID // PRODUCT SELECTION GUIDE
5
Application Example Distributed Power Supplies
SPACE applications: CISSOID products are
intrinsically immune from Single Event
Latch-up, which bring unique performance
and make them suitable for a number of
Rad-Hard applications.
6
CISSOID // PRODUCT SELECTION GUIDE
Comparative Bill of
Materials for PCB or
MCM Integration
Resistors
Capacitors
Inductor
VESUVIO®
20
18
EREBUS®
36
32
STROMBOLI®
47
62
Transformers
MOSFETs
ICs
1
2
2
1
3
4
3
16
5
150 to 350V DC (or AC)
5V DC
28V DC
Non-Isolated
DC-DC
(Buck)
Point of
Load (POL)
Point of
Load (POL)
Point of
Load (POL)
Isolated DC-DC
(Flyback)
STROMBOLI®
Embedded System / Board
VESUVIO® / EREBUS®
3.3V DC
1.8V DC
1.2V DC
CHT-VEGA / RIGEL/ YELLOWSTONE
CISSOID // PRODUCT SELECTION GUIDE
7
POWER CONVERSION
TITAN Power Drivers
TITAN product family is a range of power driver solutions covering a variety of applications including power switch gate
drives and motor drives. From single-chip integrated circuits to the complete reference design of a high-voltage gate driver
to be used in muti-kW to MW power converters, TITAN addresses the high-reliability needs for inverters, motor drives,
power generation, electrical distribution and more.
Application Example Distributed Power Supplies
 Single-chip drivers
and Reference
Designs for complete
isolated gate drivers,
motor drives and
Oil & Gas Down-Hole:
Industrial:
Industrial:
Motor Drives &
Power Distribution
Motor Drives
HVAC & Elevators
Transport:
Automotive:
Aeronautics:
Railway
and marine
EV &
HEVs
Electrical Actuators,
brakes, fluid pumps…
Solar Inverters;
Electricity transmission:
Renewable Energies
wind turbines
Smart grid
(HVDC & FACTS)
more
 From kW to
MW ranges
 Tailored and
optimized
to enable SiC, GaN
and latest generation
IGBT Switches
8
C11
 8
0mA/20mA Dual-Channel LS/HS Drivers
C12
C21
 Gate drive voltage: 10V
C22
 H
igh voltage bridge: up to 50V
internal Charge-pump
CTRL_LS
C11
C12
C21
C22
CTRL_HS
CTRL_LS
 Package: CDIL40
VHS
G_HS
Level
Shifter
CK
CTRL_HS
 H
S driver supplied by a bootstrap capacitor or an
NS10
Charge
-Pump
Bootstrap
Capacitor
N10V
10V
 J
unction temperature: -55°C to 225°C
BACK
TITAN CHT-PALLAS: Full Bridge Driver
S_HS
G_LS
LS
NS10
G_HS
S_HS
CHT-PALLAS
G_LS
TITAN CHT-HYPERION: Half Bridge Driver
100nF
220 Ω
 2
A/2A (Ron 1.5Ω) LS/HS Drivers
VDD
220nF
220 Ω
PWM
 Under voltage lockout
 C
rowbar pin locks low-side on
 Low-side disable for non-synchronous mode
 S
hut-down pin turns off both LS and HS
 Packages: CDIL28 & CSOIC28
OE
NDRVLSD
CROWBAR
UVLO
Logic
&
NonOverlap
SW
PVDD
LSDRV
100 nF
Lout
Vout
CHT-NMOS
220nF
VREF
Cout
0.1Ω
PGND
CHT-HYPERION
GND
 F
loating, bootstrapped high-side up to 50V
10µF
2.2 Ω
HSDRV
220 Ω
 Non-overlap circuitry
10 Ω
PVDD
BST
5V
 D
rive up to 1 nF
 1
5ns transition time at 200°C
VIN
 J
unction temperature: -55°C to 225°C
Vin (50V Max)
VDD
100k Ω
CHT-NMOS
5V
CISSOID // PRODUCT SELECTION GUIDE
9
TITAN CMT / CHT-THEMIS and CMT / CHT-ATLAS: Power DRIVER Chipset
THEMIS-ATLAS is a power driver chipset, especially designed to drive Silicon Carbide (SiC) MOSFETs, JFETs but also Silicon IGBTs, MOSFETs
and Gallium Nitride (GaN) power switches. ATLAS’ gate drive capability is scalable by placing up to 5 instances of ATLAS circuits driven by a
single THEMIS controller circuit.
The high temperature capability of THEMIS-ATLAS allow the chipset to be placed close to the power switch dice, which reduces the parasitic
inductances and allows high frequency operation, in particular with newest SiC and GaN switches, that bring low dynamic losses and high
temperature operation compared to traditional silicon IGBTs.
VDC
(High Voltage)
VCC (20V)
VCC
PVCC
CHT-THEMIS
R UVLO 1
UVLO_ENABLE
C VCC
VCC
+
Vth UVLO
2.5V
VSS
(-5V)
R HY ST
HYST_UVLO
(open drain)
VSS
(-5V)
VCC5P
VSS
HV NMOS
UVLO
Comparator
NS
(0V )
VP2
VSS
(-5V)
-
VSS
VSS
UVLO
FAULT_D_U
DESAT
FAULT_UVLO1
FAULT_UVLO2
Control
Logic
FAULT_UVLO_LL
CLR_FAULT
VSS
Pre-driver A
OUTA
VCC_LDO
VCC5P
(output)
Pre-driver B
(Pulse)
VCC
+5V
Linear
Voltage
Reg
10
CISSOID // PRODUCT SELECTION GUIDE
HighZA
INA
NC_AMC
VSS
(-5V)
C AMC
C BLANK
VSS
(-5V)
VSS
(-5V)
OUTNA
RGNA
SSDA
LS_A
NG
VCC5P
CBSTB_T
PVSSA2
VSS
(-5V)
CP_B
OUTC
PVSS
HighZB
Level
Shifter
&
AntiShoot
through
Logic
VCC
(20V)
HS_B
SiC
MOSFET
NS (0V)
CBSTB
RGPB
OUTPB
CBSTB_B
VCC5P
OUTNB
RGNB
SSDB
LS_B
INB
PVSSB1
PVSSB2
FAULT_DESAT
FAULT_UVLO_LL
VSS
(-5V)
CBSTA_B
VCC5P
PVCCB
Pre-driver C
(AMC)
NC_PULSE
OUTPA RGPA
PVSSA1
OUTB
+2.5V
Voltage
Ref
NC_BLANK
VSS
(-5V)
HS_A
VSS
(-5V)
SSDB_IN
VSS
VSS
(-5V)
RH
CBSTA
PVCCA
Level
Shifter
&
AntiShoot
through
Logic
VCC5PB
(input)
VCC5
(input)
C 5P
VSS
(-5V)
VSSA
IN
VCC (20V)
VH
CVCC
CP_A
SSDA_IN
VCC5P
Ih
FAULT_DESAT
NS
(0V)
VN
VCC (20V)
CBSTA_T
CHT-ATLAS
R D12
+
S
(input)
R’
VCC
VSS
(-5V )
VCC5P VCC5PA
R D11
VREF
RD21
D
D CLAMP 2
ND
Iref
VSS
R DS
VP1
RD22
-
R UVLO 2
Boost Diode
Desat
Comparator
SiC
MOSFET
HV
Sensing
Diode
D CLAMP 1
BOOST
VSS
(-5V)
VSSB
VSS
(-5V)
NMOS4005
(AMC)
VSS
(-5V)
1.3˝ (32 mm)
 Junction temperature: -55°C to 225°C (CHT) and -55°C to 175°C (CMT)
 CMT / CHT-THEMIS:
> Supply Voltage: 5V to 30V
> Can drive up to 5 x CHT-ATLAS (i.e. up to 20A to the power-switch gate)
> De-saturation detection
> Under-voltage lockout (UVLO)
2.4˝ (60 mm)
> Active Miller Clamping
> Supports normally-On and normally-Off devices
> Packages: CSOIC28 (CHT: -55° / +225°C)
PSOIC28 (CMT: -55° / +175°C)
 CMT / CHT-ATLAS:
> Gate current throughput: ±4A total (2 x ±2A)
> Soft-shut down
> High Impedance mode
> Supports normally-On and normally-Off devices
> Packages: CSOIC28 (CHT: -55° / +225°C)
PSOIC28 (CMT: -55° / +175°C)
 EVK-THEMIS-ATLAS:
> Gate current throughput: ±4A total (2 x ±2A)
> Supply Voltage: 5V to 30V
> High common mode transient immunity: 50kV/µs
> 100% duty cycle support
> Switching time: 10ns Typ. (@ CLoad=1nF and VCC=15V)
> Supports normally-On and normally-Off devices
> Eval Board validated from -55 to +175°C (ambient)
> 200°C Polyimide PCB
> Active components all qualified from -55 to +225°C (Tj)
CISSOID // PRODUCT SELECTION GUIDE
11
TITAN CMT / CHT-RHEA: Dual Isolated Transceiver
RHEA is a single chip dual channel, full duplex transceiver (2 Tx and 2 Rx channels). The magnetic isolation on each channel is ensured by an
external tiny pulse transformer. The complete 4-channel data transmission requires 2 instances of RHEA on each side of the pulse transformers.
The solution offers state-of-the-art digital signal isolation with substantial advantages over opto-couplers including high reliability, high
immunity to dV/dt and operation in extreme temperature conditions.
Applications include isolated gate drivers in power converters, isolation of industrial busses, isolated A-D converters and sensor interfaces,
motordrives and battery management in industrial, aeronautics, railway and electric & hybrid vehicles.
TXTRIM0
TXTRIM1
TXTRIM2
VSS
OSCILLATOR
CHT-RHEA
VCC
SETMODRXA
ENABLETX
TXAP
Driver
SETMODTXA
DINA
TX
MODULATOR
+
CONTROL
LOGIC
TXAP
RX
DEMOD
+
CONTROL
LOGIC
TXAN
Driver
TXAN
DOUTB
RXFB
SETMODRXB
DOUTA
RXFA
SETMODRXA
ENABLERX
12
CISSOID // PRODUCT SELECTION GUIDE
ENABLERX
RX Channel A
TX Channel B
TXBP
TXBN
RXBN
RXBP
RX Channel B
RX Channel B
RXBP
RXBN
TXBN
TXBP
TX Channel B
RX Channel A
RXAP
RXAN
TXAN
TXAP
TXTRIM0
TXTRIM1
TXTRIM2
CHT-RHEA
DOUTA
RXAP
TX Channel A
SETMODTXB
DINB
RXFA
RXAN
VSS
TX Channel A
OSCILLATOR
SETMODRXB
RXFB
DOUTB
DINB
SETMODTXB
DINA
SETMODTXA
ENABLETX
VCC
1.8˝ (45 mm)
 Junction temperature: -55°C to 225°C (CHT) and -55°C to 175°C (CMT)
 Data rate up to 2 Mbps per channel
 Transmission delay: max 120 ns
 Jitter (RMS cycle-2-cycle): max 21 ns
 Power supply: 5V
2.1˝ (53 mm)
 Power consumption: 43 mW /channel (1 MHz NRZ input)
 Hysteresis on digital input for noise immunity
 Isolation: 10 MΩ @2500V
 High common mode transient immunity: 50kV/µS
 On-Off Keying modulation
 Carrier frequency: 6.5 to 20MHz
 Packages: CSOIC28 (CHT: -55° / +225°C)
PSOIC28 (CMT: -55° / +175°C)
 EVK-RHEA (implements 2 instances of CHT-RHEA ICs):
> 4 Fully isolated channels: 2 transmit (Tx) and 2 receive (Rx) channels
> Eval Board validated from -55 to +175°C (ambient)
> 200°C Polyimide PCB
> Active components all qualified from -55 to +225°C (Tj)
CISSOID // PRODUCT SELECTION GUIDE
13
TITAN H
ADES® Half-Bridge 1200V Isolated Gate Driver:
Chipset, Reference Design and Evaluation Kit
HADES® is a complete half-bridge gate driver Reference Design dedicated to drive power switches, in particular the newest generation of wide-bandgap power
switch devices such as SiC and GaN (e.g. MOSFETs and JFETs). Other types of devices (BJTs, IGBTs) can be supported. The Evaluation Board EVK- HADES® is a
turnkey gate driver board that can be used immediately to implement a power converter or a motor drive, supporting a bus voltage up to 600V / 1200V and gate
currents up to ±4A.
HADES® Reference Design is based on
the chipset CHT-THEMIS/CHT-ATLAS and
CHT-RHEA. The solution also includes
an isolated power supply built with CHTMAGMA PWM controller. For applications
that require gate currents greater than
±4A, designers can modify HADES®
reference design and build their own
board by adding up to 4 four additional
CHT-ATLAS circuits per channel (highside and low side) in order to sink / source
up to ±20A to the gate of the power switch
devices.
PWMH_I
PWMH
HB_SA_SEL
PWML
Local
Non -Overlap
Management
VDD H
VREF
UVLO _EN
VCC5H
PWMH_I
CLRFH
FUVLOH
FDSATH
14
CISSOID // PRODUCT SELECTION GUIDE
VCC5P
CHTTHEMIS
VCC5P
CLR_FAULT
CHT-RHEA
4
4
CHT-RHEA
OUTNB
Channel B
RGN HS
CHT-ATLAS
Channel A
FAULT_DESAT
2
Isolated Data
Transceiver
NGH
HS
Power Switch
RGP HS
OUTPA
OUTC
INA
PVSS /VSS
PV SS /VSS
OUTNA
RGN HS
V SSH
VDD
HV DC BUS/
VDD
OUTPB
OUTA
FAULT _UVLO
NDH
RGP HS
PVCC
INB
IN
2
DESAT
Sensing
Diode
VCC5H
VN
VCC _LDO
VDD5P
RDS
VREF
V SSH
NSH
VDDH
NSH
CHTMAGMA
SWT
COMP
LDO
VDD5P
VDD
V SS H
PWM
VDDL
FB
V SS L
GND
VDDL
VREF
NSL
Discrete
The Evaluation Kit EVK-HADES can be used
for immediate testing with SiC MOSFET
devices. Other power switch devices will
be supported in 2012 (availability: contact
CISSOID). The Evaluation Kit includes
an evaluation board with the complete
electrical schematic, the bill of materials
including active and passive components,
the Gerber files.
PVCC /VCC
PWML_I
V SS L
VCC5H
CLR_FAULT
CHT-RHEA
4
VCC5P
CHTTHEMIS
IN
2
4
VN
FAULT _UVLO
CHT-RHEA
V SS L
PVCC
RGP LS
INB
Channel B
OUTNB
RGN LS
NGL
CHT-ATLAS
Channel A
LS
Power Switch
RGP LS
OUTPA
OUTC
PVSS /VSS
NDL
OUTPB
FAULT_DESAT
2
EVK-HADES ®
OUTA
DESAT
Sensing
Diode
VCC5L
VCC _LDO
VCC5P
VDD5P
RDS
VREF
UVLO _EN
PWML_I
CLRFL
FUVLOL
FDSATL
PVCC /VCC
INA
PV SS /VSS
OUTNA
RGN LS
NSL
HV DC BUS/ GND
4˝ (100 mm)
EVK-HADES: EVALUATION KIT
 High-side and Low-side gate drive
 DC Bus up to 1,200V
 ±4A Output current per channel
 Gate Voltages: 3 different flavors:
> MOSFET +20V/-5V
4˝ (100 mm)
> JFET normally ON / OFF : Contact Cissoid
> BJT: Contact Cissoid
Application Example 3-Phase Motor Drive
 High common mode transient immunity: 50kV/µs
 Power supply: 12V ±10% supply
Hot Area (MCM or PCB implementation)
Half-Bridge (HB1)
HB2
HB3
Control
(speed, position, torque)
High-Voltage DC bus (e.g. 600VDC)
High
Side
Power
Device
Fault
Control
HADES
Isolated Gate Driver &
isolated power supply
Fault
Control
 Switching frequency: 100kHz / 200kHz Typ.
 Dual (with on-board non-overlapping)/
single PWM input
 Active Miller clamping
 Desaturation detection
 Fault outputs
Low
Side
Power
Device
 Eval Board validated from -55 to +175°C (ambient)
> 200°C Polyimide PCB
> Active components qualified from -55 to +225°C (Tj)
= HADES reduces the parasitic inductances as it can be
placed right next to the power switch dice. Which enables faster
switching time, taking full advantage of SiC / GaN capabilities !
> 225°C transformers
CISSOID // PRODUCT SELECTION GUIDE
15
CISSOID HADES® Enables Compact & Cooling-Free Power Converters in EV & HEV
Battery Chargers
Aux. DC-DC Converters
Voltage Boost Converters
Motor Drives / Reversible
Electric Steering
Electric Wheels
Brake-by-Wire
Electric Vehicules
HVAC
Mild Hybrid
Power Windows
1W
10W
Cooling Fans
100W
Full Hybrid
Stop & Go Alternators
1kW
10kW
100kW
Typical EV / P-HEV Architetcure
DC-DC
Converter
High Voltage
12V Aux.
Battery
HV
Battery
(+ BMS)
On-board 12V
Motor/
Generator
Inverter
DC-DC Boost
Converter
AC-DC Converter
(battery charger from grid)
16
CISSOID // PRODUCT SELECTION GUIDE
AC-DC
Converter
Power
Range
CISSOID Enables the “More Electrical Aircraft”
 H
igh-Reliability
Power Converters:
Secondary Flight
Controls (SFC)
Electrical Actuators,
Power Generation, Fluid
Pumps and Electrical
Primary Flight
Controls (PFC)
Distribution
 S
ensor Interfaces
& Health Monitoring
Nose Landing
Gear (MLG)
& Nose Wheel
Steering (NWS)
High Lift Systems
(HLS)
• Thrust Reverser (TR)
• Fluid pumps
• VSV
• Health Monitoring
• Electric Taxiing
•M
ain Landing
Gear (MLG)
Trimmable
Horizontal
Stabilizer (THS) •S
teering, Extension/
Retraction, Braking...
• Health Monitoring
CISSOID // PRODUCT SELECTION GUIDE
17
DISCRETE
PLANET Product Highlights
CHT-GANYMEDE & CHT-CALLISTO:
Dual Small Signal Diodes
 Temperature range: -55°C to +225°C
 Available in dual series (GANYMEDE) and common
anode (CALLISTO)
 VBR = 80V (max)
 Forward current: IF = 280 mA
(@ Tj=225°C and VF = 1.5V)
 Forward voltage: VF = 0.7V (typ. @ IF = 1mA)
1
1
2
 Junction capacitance: Cj=8.5pF (typ. @ VR = 25V)
2
3
3
CHT-GANYMEDE
CHT-CALLISTO
 Package: Hermetically sealed TO18 (metal can)
 Applications: Clamping, Voltage multiplier / charge-
TO18 (bottom view)
Case connected to pin 3
pumps, Signal rectification, General purpose diode
CHT-AMALTHEA:
DUAL 80V /3A DIODES
 Temperature range: -55°C to +225°C
 Available in dual series, common anode and common cathode
 VBR = 80V (max)
 Forward current: IF = 3A (@ Tj=225°C and VF = 1.8V) and 4A pulsed
 Forward voltage: VF = 1.8V (typ. @ IF = 3A and 225°C)
 Junction capacitance: Cj=38pF (typ. @ VR = 80V)
K1
A
18
K2 A1
K1 A1
K1-A2
K
A2
 P
ackage: Hermetically sealed TO257 (metal can isolated from the pins)
 Applications: Clamping, rectification; free wheeling…
CHT-NEPTUNE:
High-Temperature, High Voltage,
Silicon Carbide MOSFET
 Temperature range: -55 to +225°C
 VDS Max: 1200V
 IDS Max (continuous): 10A @ 225°C
 Typical On-resistance:
> RON: 90 mΩ @ 25°C
> RON: 150 mΩ @ 225°C
 VGS=-2V/20V (possibility to be driven from 0/5V)
D
 CGS: 1915 pF
 Package: TO257 – Metal package isolated from the pins
> Rth j/c: 1.1°C/W
G
S
CHT-MOON:
Dual NMOS 40V / 1A
 Temperature range from -55°C to 225°C
 VDS up to 40V
 VGS 0V to 5V
 IOUT max: 1A (@ Tj =225°C)
 Maximum power dissipation: 3.3W
 RON: 0.38Ω (@ Tj =25°C)
0.65Ω (@ Tj =225°C)
 CIN: 370pF
 Package: CSOIC16
CHT-MOON
CISSOID // PRODUCT SELECTION GUIDE
19
PLANET Selection Table: Transistors, DIodes & Switches, -55°C to +225°C
All parameters are Maximum values at 225°C unless otherwise specified
Product Name
VDS Max
IDS Max
VGS
@ 25°C
@ 225°C
Imput
Capacitance
(Typ.)
Package
Rth J/c
(Typ.)
NEW EARTH / CHT-NMOS8001
NMOS Medium Power
80V
Transistor
1A
0 to +5V
(3A pulse)
0.76Ω
1.56Ω
240pF
TDFP16
11°C/W
EARTH / CHT-NMOS8005
NMOS Medium Power
80V
Transistor
5A
0 to +5V
0.48Ω
0.99Ω
410pF
TO254
5°C/W
EARTH / CHT-NMOS8010
NMOS Medium Power
80V
Transistor
10A
0 to +5V
0.24Ω
0.46Ω
850pF
TO254
5°C/W
SATURN / CHT-NMOS4005
NMOS Medium Power
40V
Transistor
5A
-0.5V to +5.5V
0.38Ω
0.65Ω
370pF
TO254
5°C/W
SATURN / CHT-NMOS4010
NMOS Medium Power
40V
Transistor
10A
-0.5V to +5.5V
0.2Ω
0.36Ω
720pF
TO254
3°C/W
SATURN / CHT-NMOS4020
NMOS Medium Power
40V
Transistor
20A
-0.5V to +5.5V
0.12Ω
0.25Ω
1.84nF
TO254
2°C/W
MERCURY / CHT-SNMOS80
NMOS Small Signal
Transistor
80V
300mA
-0.5V to +5.5V
7.5Ω
15Ω
23pF
TO39; TO18
60°C/W
CHT-MOON
Dual NMOS Medium
Power Transistor
40V
4A
-0.5V to +5.5V
0.38Ω
0.65Ω
370pF
CSOIC16
60°C/W
VENUS / CHT-PMOS3002
PMOS Medium Power
Transistor
30V
2A
+0.5V to -5.5V
2.3Ω
3.9Ω
150pF
TO254
5°C/W
VENUS / CHT-PMOS3004
PMOS Medium Power
Transistor
30V
4A
+0.5V to -5.5V
1.1Ω
2.0Ω
300pF
TO254
5°C/W
VENUS / CHT-PMOS3008
PMOS Medium Power
Transistor
30V
8A
+0.5V to -5.5V
0.6Ω
1.0Ω
600pF
TO254
5°C/W
MARS / CHT-SPMOS30
PMOS Small Signal
Transistor
30V
310mA
+0.5V to -5.5V
15Ω
26Ω
14pF
TO39; TO18
60°C/W
High Voltage Silicon
Carbide MOSFET
1200V
10A
-2V to +20V
0.09Ω
0.15Ω
1915pF
TO257
1.1°C/W
NEW CHT-NEPTUNE
Product Name
NEW
Description
VR
IF
VF
Junction
Capacitance (Typ.)
Package
CHT-GANYMEDE
Dual Series Small Signal Diode
80V
280mA
0.7V
8.5pF
TO18
CHT-CALLISTO
Dual Small Signal Diode
(Common Anode)
80V
280mA
0.7V
8.5pF
TO18
Dual Diode (Dual Series, Common Anode &
Common Cathode)
80V
3A
1.8V
38pF
TO257
NEW CHT-AMALTHEA
20
Description
RDSON
CISSOID // PRODUCT SELECTION GUIDE
Application NOTE SiC FULL H-BRIDGE WITH GATE DRIVER/ HIGH VOLTAGE / HIGH POWER DENSITY
High Voltage
1200V Max
Applications:
 BLDC Motor control
 Capacitive discharge Welders
 Piezo control
4x
CHT-NEPTUNE
 LF Sonars
 …
CHT-ATLAS
CHT-RHEA Isolation
LOAD
CHT-ATLAS
CHT-RHEA Isolation
Key Features:
 Temperature range: -55°C to +225°C
 VBUS Max: 1,200V
 ILOAD Max: 10A
1 x CHT-ATLAS
Availability: 2013
CISSOID // PRODUCT SELECTION GUIDE
21
SIGNAL CONDITIONING
GEMSTONE AMPLIFIERS
GEMSTONE product family is CISSOID’ range of integrated amplifiers for high & medium temperature
applications. It includes a high-precision dual OpAmp, a general-purpose quad-Op Amp as well as
a single chip combining a triple Op Amp with a 5V ±2% / 25mA voltage reference suitable for bridge
excitation in sensor applications.
Product Name
Description
Power
Supply
Output
Voltage
Swing
Input
Offset
Voltage
GBW
(Typ.)
Slew
Rate [1]
Temperature
Range
Packages
TURQUOISE /
CHT-OPA
Quad Op Amp
4.5V to 20V
2.2mA
VDD-0.18V
VSS +0.18V
±8mV
1.5MHz 1.7V / ̌ s
-55°C/+225°C
CDIL14,
CSOIC16
TURQUOISE /
CMT-OPA
Quad Op Amp
4.5V to 20V
2.0mA
VDD-0.18V
VSS +0.18V
±8mV
1.5MHz 1.6V / ̌ s
-55°C/+175°C
PSOIC16
CHT-RUBY
Triple Op Amp
6.0V to 20V
+ Voltage Reference
1.6mA
VDD-0.18V
VSS +0.18V
±8mV
1.3MHz 1.6V / ̌ s
-55°C/+225°C
CSOIC16
4.5V to 5.5V 2.8mA
VDD - 0.1V
VSS+0.1V
<50µV
2.8MHz
-55°C/+225°C
TDFP16
Coming Soon CHT-OPALE
Dual Precision
Op Amp
[1] Load conditions: RL=2K�, CL=30pF and Tj=225°C max
22
Max. Current
Consumption
[1]
2.7V/µs
(@25°C);
3.2V/µs
(@225°C)
Application NOTE 4-20mA CURRENT LOOP TRANSMITTER
COMING soon
Current-mode data transmission is a preferred
technique in harsh environments and industrial
applications.
The Application Note is based CISSOID’ new high
precision dual Op Amp CHT-OPALE. It implements
a popular 2-wire, 4-20mA current loop, in which
a single twisted-pair cable supplies power to
the module and carries the output signal. The
Reference Design is guaranteed for operation
up to +225°C. It implements a temperature
measurement sensing circuit whose data is
transmitted over the 4-20mA current loop.
Power supply
(8V~30V)
+
-
To Data
logger/
Receiver
Sensor
Twisted Pair
4-20mA
Transmiter
COMING soon
Application Instrumentation Amplifier + Bridge Excitation
CHT-RUBY triple Op Amp can be used to
implement an Instrumentation Amplifier, by
adding external passive components. The IC
features a stable, 5V±2% voltage output with
25mA throughput that can be used for bridge
excitation in sensor applications.
OUT_REF
VREF (5V)
VDD
VREF
+
-
+
CHT-RUBY
-
OUT
+
-
VSS
23
RIVER Mixed Signal ICs
RIVER is the general purpose, mixed-signal product family from CISSOID. It currently includes an Analog-to-Digital converter, a programmable comparator and a
high-speed comparator.
SCLK
24
-
10
Gnd_A
Gnd_D
Gnd_D
10_n8
A0
Control Logic
R_nC
Control Logic
CE(10-bit SAR)
(10-bit SAR)
nCS
SCLK
CHT-AMAZON
CHT-AMAZON
SCLK
CK
CK10 Selector
Selector
Gnd_A
5V
nEOC
10
+
+ 5V
nEOC
nEOC
Control
Logic
10
10
R-2R
[D7..D0] [D9..D0]
(10-bit SAR)
R-2R 8
[D9..D0] [D7..D0]
[D9..D0]
8
DOUT
GND_A
GND_D
-
5V
VIN_P
+
VIN_N
CHT-NILE
+
VIN_N
VDD
VIN_P
VIN_P
CMP_OUT
CMP_OUT
R-2R
[D7..D0]
8
VDD
Vin_5
Vin_10
Vin_bip
Par/Ser
DOUT
CHT-NILE
CHT-NILE
Converter
GND_A
GND_D
Vdd_A
Vdd_D
Vdd_A
Vdd_D
Vdd_A
Vdd_D
Internal
CK
Vin_5
CK
Vin_5
Vin_10
Selector
Vin_10
Vin_bip
Vin_bip
Gnd_D
Par/Ser
Par/Ser Converter
DOUT
Converter
GND_A
CHT-AMAZON
GND_D
CISSOID // PRODUCT SELECTION GUIDE
Vdd_A
Vdd_D
CK
Detector
+
+
CMP_OUT
-
-
VOUT
VIN_N
VOUT
VOUT
-
CHT-VOLGA
CHT-VOLGA
CHT-VOLGA
VSS
10_n8
A0
R_nC
CE
nCS
Gnd_A
Vdd_A
Vdd_A
Vdd_D
CK
Internal
Vdd_D
CK Input
Internal
Detector
CK
Detector
Sampling CK +
Vdd_D
GND
-
10
10_n8
A0
R_nC
CE
nCS
Vdd_A
Vdd_D
Vin_5
Input Vin_10
Input Sampling
+
+
Vin_bip
Sampling
Vdd_A
GND
Vin_5
Vin_10
Vin_bip
CK
CK
Vin_5
Vin_10
Vin_bip
GND
CK
Vdd_A
Vdd_D


EN

VSS

Temperature range: -55°C to +225°C
High speed
Rail to rail I/O
Internal hysteresis: 6 mV Typ.
Push-Pull CMOS output: ±16mA Max
Propagation delay: 29ns Typ.
(@ 20 mV overdrive)
Shutdown current consumption:
1 nA Typ. (25°C)
Static current consumption:
600 µA Typ. (@ 25°C)
1.26 mA Typ. (@ 225°C)
Maximum operating frequency: 25 MHz Typ.
Package: Ceramic TDFP16
VDD






EN


 Temperature range:
-55°C to +225°C
 Comparison of an analog
input against
an 8-bit resolution portion
of a 5V reference voltage
 Programmable threshold
 Continuous time comparison
 Valid output within 2.6µs for
a ½ LSB (10 mV) overdrive
 Input ranges from -15V to +10V
 Package: CSOIC16
VSS


T
emperature range: -55°C to +225°C
S
AR Architecture
2
5k Samples/s
Ultra low current IDD =200µA
ENOB=9bits at 225°C and
still 8 bits at 300°C
V
ersatile Input range
S
erial and Parallel output:
SPI & x74 ‘like’ µC interface
On-chip Sample-and-hold
Package: DIL28
EN





VOLGA
HIGH-SPEED
COMPARATOR
NILE (CHT-PTC8)
8-BIT PROGRAMMABLE
COMPARATOR
AMAZON (CHT-ADC10)
10-BIT ULTRA LOW
POWER ADC
GALAXY CHT / CMT-74xx Logic Family
GALAXY product family is a range of popular logic devices including gates and flip-flops that can be used as general purpose bricks by electrical
designers to simplify their high-temperature designs. A 12-stage-binary counter 74-4040 is now available for frequency division in clock
management applications. All GALAXY are available in both CHT and CMT flavors.
Product Name
Description
CHT-7400
Quad 2-input NAND
CHT-7404
Hex inverter
CHT-7408
Quad 2-Input AND
CHT-74021
Quad 2-Input NOR
CHT-7432
Quad 2-Input OR
CHT-7474
Dual D-type flip-flop
CHT-7486
Quad 2-Input XOR
CHT-74132
Quad NAND Schmitt Trigger
NEW CHT-74-4040
Power
Supply
3.0V to
5.5V
Max
Quiescent
Current
2.2µA
VOH Min
VOL Max
VIH Min
VIL Max
2.7V
(VDD
= 3.3V)
0.5V
(VDD
= 3.3V)
2.4V
(VDD
= 3.3V)
1.5V
(VDD
= 3.3V)
4.6V
(VDD
=5.0V)
0.4V
(VDD
=5.0V)
3.7V
(VDD
=5.0V)
2.0V
(VDD
=5.0V)
2.46V
(VDD
= 3.3V)
0.41V
(VDD
= 3.3V)
2.2V
(VDD= 3.3V)
1.5V
(VDD
= 3.3V)
4.47V
(VDD=5.0V)
0.59V
(VDD=5.0V)
3.3V
(VDD=5.0V)
2.2V
(VDD=5.0V)
IOH Max
(Typ.)
IOL Max
(Typ.)
Temperature
Range
Packages
4mA
4mA
-55°C/+225°C
CDIL
14/16,
CSOIC16
4mA
4mA
-55°C/+175°C
PSOIC16
12-stage binary ripple counter
CMT-7400
Quad 2-input NAND
CMT-7404
Hex inverter
CMT-7408
Quad 2-Input AND
CMT-74021
Quad 2-Input NOR
CMT-7432
Quad 2-Input OR
CMT-7474
Dual D-type flip-flop
CMT-7486
Quad 2-Input XOR
CMT-74132
Quad NAND Schmitt Trigger
3.0V to
5.5V
0.93µA
CISSOID // PRODUCT SELECTION GUIDE
25
PULSAR CHT-CG50 Clock Generator & CMT/CHT-555 Timer
PULSAR is the product family dedicated to clock generation and timers.
CISSOID’ industry standard CHT-CG50 is recognized as the most robust clock generator device for crystal-based clock modules for in Oil &
Gas and Aerospace. It is available in ceramic CDIL package. Under request, it can be offered in die form for integration into modules. Contact
CISSOID for more information.
The popular 555 timer is offered by CISSOID in 2 flavors: CHT and CMT, with respective temperature ratings of -55°C~+225°C and of -55°C~+175°C.
Output
Product Name
Power
Supply
Description
Typ. Current
Consumption [1]
Max
Temperature
Frequency
Drift
Rise Time
(Typ.)
Fall Time
(Typ.)
Temperature
Range
Packages
CHT-CG50
Crystal Clock Generator
3.3V to 5.0V
650µA @5V
50MHz
0.6%
3ns
2.5ns
-55°C/+225°C CDIL24
CHT-555
555 Timer
4.5V to 5.5V
350µA
4.2MHz
100ppm
16.1ns
17.2ns
-55°C/+225°C CDIL8
CMT-555
555 Timer
4.5V to 5.5V
350µA
4.2MHz
100ppm
14ns
14ns
-55°C/+175°C PSOIC8
[1] Consumption at 1MHz
Vdd
Freq.
Divider
DIV_1
DIV_0
Clock
select
ExtClk_In
ExtClk_En
20p 10p
C1ext
CISSOID // PRODUCT SELECTION GUIDE
VDD
CNTRL_V
THRESHOLD
20p 20p
C3
TRIGGER
F/F
RESET
100k
VSS
C2 ext
CHT-555 /
CMT- 555
SET
R3
Xtal
RESET
100k
100k
R2 ext
26
PULSAR CHT-555 & CMT-555
/OE
CHT-CG50
XtalDR_1
XtalDR_0
XtalEn
C1_20pF
C1_10pF
X1
Vss
Output
Buffer
X2
R2
C2_10pF
C2_20pF
Vdd_Buff
Vss_Buff
FOUT
DRI_1
DRI_0
PULSAR CHT-CG50
/Q
OUTPUT
DISCHARGE
CISSOID // PRODUCT SELECTION GUIDE
27
CISSOID Packages (scale 1:1 - millimeter units)
35.56
13.21
CDIL 28
3.90
Min 6.00/Max 6.50
TDFP 16
0.42
7.62
3.5-4.4
2.16
Max 7.89
2.15
7.45
4.80
0.20
9.00
Typ. 10.00/Max 11.00
7.15
7.45
7.45
4.70
9.00
Typ. 10.00/Max 11.00
7.15
7.45
5.00
7.50 Max
28
CDIL 8
CSOIC 16
2.80
0.40
2.54 0.40-0.50
10.25
2.15
1.27
2.80
0.15
0.40-0.50
0.40-0.50
1.6-2.1
CSOIC 28
0.635
12.00
0.40
0.40
10.45
0.20
0.42
1.20
7.36
7.52
7.52
17.90
5.50
0.61
CDIL 14
10.25
1.27
0.11
0.11
Max
Max
4.44.4
2.54
2.54
0.40-0.50
2.54
12.00
12.00
2.55
2.55
Max
Max
7.70
7.70
3.5
3.5
Max 4.4
1.27
13.10
7.37
7.37
15.24
0.32
0.77
2.16
Max 8.27
1.02
0.254
13.21
15.99
15.99
1.6-2.1
6.52
13.72
10.6
4.8
3.65
3.5
1.16
0.8
2.54
1.02
2.9
3.81
3.81
TO 257
TO 254
0.80*2
5.10
45.0°
0.
17
80
0.
5.24-5.84
9.20
4.25-4.97
0.76
12.70
18.03
13.76
0.70
8.20
18.22
1.
2
1
45.0°
1.
0.55
2.97
5.24
1.21
8.20
80
9.20
0.49*3
0.40*3
1.48
2.65
TO 39
TO 18
16.5
13.5
10.6
13.701 / 25.40
17.5 - 18.5
20.19
17.15
13.72
1.0
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