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Transcript
FREQUENCY RESPONSE OF THE SINGLE STAGE BJT AMPLIFIER IN CE CONFIGURATION I.OBJECTIVES a) Learning the experimental method to find the frequency response. b) The determination of the 3dB bandwidth. c) The determination of the effects of the capacitive elements and of the gain on the bandwidth II. COMPONENTS AND INSTRUMENTATION We will work with the experimental assembly from Fig. II.3.7. For supply a dc voltage source will be used. The sine wave signals are applied from a signal generator and are visualized with a dual channel oscilloscope. In order to measure the dc voltages we will use a dc voltmeter. III. PREPARATION P1. The frequency response The equivalent circuit of showing the connection between the signal source vs with the internal resistance Rs and the amplifier is presented in Fig. II.3.1. Rs vs Cc Ri Ci Fig. II 3.1. The equivalent circuit Ri and Ci are the resistance, respective the input capacity of the amplifier. We analyse the circuit in three frequency domains: low, medium and high. The values fL and fH, for the circuit from the figure Fig II.3.6, are deduced by replacing the transistor with its model at high and low frequencies and by writing the complex transfer function of the circuit. At low frequencies, the equivalent capacity Cech between the base and the emitter is considered a discontinuity (very low capacity pF), resulting the equivalent circuit from the figure Fig.II.3.2 : 1 iS iB ZS iC iO ZO VBE rBE RC RB VS RL gmVBE i1 (β+1)iB VO1 ZE iO VO RB = R1R2 R1+R2 Fig. II.3.2. The small signal model of the BJT at low frequencies where: ZS = 1+jωCCRS jωCC ZE= RE 1+jωCERE ZO = 1 jωCO After the computations on the small signal model of the BJT at low frequencies, the following expresion of the transfer function was obtained : H(jω)= If CE β VO βRCRLRB =VI (RC+RL+ZO){RBZS+[rbebe+(1+β)ZE]ZS+[rbe+(1+β)ZE]}R B R1 || R2 || RS + rbe 1 where Rech = RE || f = L <<CC 2πCERech β fL = 1 2πCC(RS+R1 || R2 || rbe) At high frequencies CO, CC and CE behave as short-circuits. Instead, the equivalent capacity Cech given by the parasitic capacities of the bipolar transistor counts. The impedances become : ZS = RS, ZE = 0, ZO = 0, and rbe is replaced with Zbe,where : rbe Zbe = 1+jωCechrbe Sugestion: The small signal model of the BJT at high frequencies is presented in Fig.II.3.3.a. Due to the Miller effect Cbc is multiplied with (1-Av), where Av is the voltage gain. It results the equivalent circuit in Fig.II.1.3.b. with Cech=Cbe+(1-Av)Cbc. 2 Cbc B C B Cbe rb cech rb e C e E a) E b) Fig. II.3.3. The small signal model of the BT at high frequencies For the BC190 transistor, at Ic=1,4 mA, consider β=200, Cbe45pF and Cbc2,6pF. The equivalent circuit will look like the one in Fig.II.3.4. fH= Finally it results that: 1 2πCech[RS || (R1 || R2 || rbe)] How does the frequency response look like? For the frequency, the logaritmic scale will be used. RS Vb VS Zbe e RB gmVbe VO RC || RL Fig. II.3.4. The equivalent circuit in high frequencies P2. The effects of the capacities and gain on the frequency bandwidth We consider Cc=10nF, Ce=100F, Cbc=2,6pF, Av=-90 as reference values. Compute fL when CC=47nF, the other quantities being the reference ones, using the relationship: fL = Compute fL when CE=1F, the other quantities being the reference ones, using the relationship: fL= 1 2πCC(RS+R1 || R2 || rbe) 1 2πCERech ,where Rech = RE || R1 || R2 || RS + rbe β Compute fH using the relationship: fH= 1 2πCech[RS || (R1 || R2 || rbe)] when Cbc=12,6pF, the other quantities being the reference ones. 3 Compute fH when Av=-180, the other quantities being the reference ones. IV.EXPLORATIONS AND RESULTS VS=12V R2 C3 10n vs 3K3 R4 Co K2 vo + 1 Rs 5,6K 82K Cc K1 2 47n R3 T 1 0 p BC190 RL K3 1 R5 22K K4 100 2 3K3 + CE + 1K2 100 1 Fig II.3.5. 1. The dc analysis of the CE amplifier stage Explorations Build the circuit in Fig. II.3.6. (K1→1, K2→open, K3→1, K4→closed). (See Fig. II.3.7) Supply the circuit with 12V dc. Measure a minimal number of voltages to determine the bias point of the transistor. Results Give the values of IC and VCE for the transistor. Compare the measured IC with the value computed in P.1. 2. The frequency response of the CE amplifier stage Explorations We will use the circuit from Fig II.3.6. vs is a sine wave from a signal generator, with the amplitude of 40mV and of 5KHz frequency. We simultaneously visualize vs(t) and vo(t) with the oscilloscope. We adjust, if needed, the amplitude of vs until vo is undistorted. We determine the amplitude of vo. Without modifying the amplitude of vs we determine the amplitude of vo for the frequencies listed in Table II.3.1. Determining fL and fH with the oscilloscope: To determine fL: we decrease the frequency of vs until the amplitude of vo decreases to 1 2 the amplitude of vo measured at a frequency of 5kHz. 4 0.707 from To determine fH: we increase vs until the amplitude of vo decreases to 1 0.707 from the 2 amplitude of vo measured at a frequency of 5kHz. Vs=12V R1 82K R4 3K3 Co + vo CC v+i vi T 100 BC190 RL 10nF 3K3 Ri + R2 22K R5 1K2 CE 100 Fig II.3.6. The BJT amplifier Results Fill in the Table II.3.1. Table II.3.1 F [Hz] 102 103 5·103 104 105 106 Vo [V] The values of fL and fH and of the amplitude of vo at these frequencies. Compare fL and fH with those computed at P2. Fill fL and fH in the first row of Table II.3.2. Sketch the Bode plot of the circuit, using your measured values. Compare it with the Bode plots derived in P.2, and if different, explain why. 3. The effects of the capacitances and of the gain on the bandwidth Explorations We want to determine the effects of the capacitors CC, CE, Cbc, and of the voltage gain Av on the amplifier’s bandwidth. For each of the following variables we consider as reference value: CC=10nF, CE=100F, Cbe=2,6pF (parasitic capacitance of the transistor), Av=-90 (value which can be determined from the circuit in Fig II.3.6). We modify these values one at a time, determining each time the bandwidth by measuring fL and fH, with the oscilloscope, for each of the following situations. vs sine wave signal with the amplitude smaller than 40mV We visualize vs(t) and vo(t). We modify the frequency of vs in order to obtain the maximum amplitude of vo (if vo is distorted we decrease vs). 1 We determine fL by decreasing the frequency of vs until the amplitude of vo decreases to 0.707 2 from the maximum amplitude obtained for vo. 5 We determine fH by increasing the frequency of vs until the amplitude of vo becomes 1 0.707 from 2 the maximum amplitude obtained for vo. a) The CC effect (CC=47nF): K12, K2open, K31, K4closed. b) The CE effect (CE=1F): K11, K2 open, K32, K4 closed. c) The Cbe effect: we add a capacitance C=10pF in parallel with Cbe, therefore Cbe=12.6 pF; K11, K2 closed, K31, K4 closed. d) The AV effect: K11, K2 open, K31, K4 open. Results For the 4 situations a), b), c), d) mentioned above, we fill in the Table II.3.2 (No.2, 3, 4, 5) the values of the fL, fH and of the bandwidth B=fH-fL. Table II.3.2 No. CC [nF] CE [F] Cbe [pF] (C [pF]) Av 1 10 100 2,6 (0) -90 2 47 100 2,6 (0) -90 3 10 1 2,6 (0) -90 4 10 100 12,6 (10) -90 5 10 100 2,6 (0) -180 fL fH B Compare the measured values (for fL and fH) with those computed at P.2 and P.3. Which of the frequencies (fL or fH) modifies its value with respect to each of the 4 variables: CC, CE, Cbe, Av? How do fL and fH modify (increase/decrease) according to the variation of each of the 4 variables? What combination of values should be chosen for CC, CE, Cbe, Av to obtain: (1) the smallest bandwidth; (2) the largest bandwidth? According to the data from Table II.3.2, which one of the two frequencies: f L or fH, has a greater effect on the bandwidth? Why? If simultaneously CC=47nF and CE=1F, what will be the value of fL? If simultaneously Cbc=12,6pF and Av=-180, what will be the value of fH? 6 Alim VCC 1 2 Rled 5k6 CON2 VCC LED LED J4 CON2 J5 CON2 R4 R2 10n 100n 2 1 5k6 CON2 1 2 1 2 2 100u J6 2 J7 1 1 2 J10 2 1 1 2 CON2 RL R5 R3 CON2 3k3 1k2 J8 22k J14 J16 2 1 2 1 2 1 1 2 47n J15 Q1 BC107 BC190 2 1 CON2 J3 C2 10p J2 1 R1 Output 1 2 3 1 2 J9 C4 J1 C1 Input 3k3 C3 1 2 82k CON2 CON2 CON2 C6 C5 100u Fig. II.3.7. The experimental assembly 7 1u