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1. PURPOSE. This method establishes the means for assuring circuit performance to the limits specified in the
applicable acquisition document in regard to output leakage current when an output is in the high-impedance state with a
high-level voltage applied. This current should normally be specified as a maximum positive value (I OHZ maximum). This
method applies to digital microelectronic devices, such as TTL, DTL, RTL, ECL and MOS that have tristate outputs.
2. APPARATUS. The test chamber shall be capable of maintaining the device under test at any specified test
temperature. An instrument shall be provided that has the capability of applying the specified high level voltage to the
output terminal and measure the resultant current flowing out of the terminals.
3. PROCEDURE. The device shall be stabilized at the specified test temperature. Apply voltages to the test circuit as
Worst-case power supply voltage (VCC) applied to the VCC terminal.
Threshold level voltage (V IH minimum or V IL maximum) applied to the control inputs which will cause the output
under test to be in the high-impedance (off) state.
Nonthreshold level voltage applied to the logic input terminals controlling the output under test so as to produce a
"hard" low voltage level at that output if the output was not in the high-impedance state. Apply the specified high
logic level voltage to the output terminal under test and measure the resultant leakage current. Outputs shall be
measured individually.
4. SUMMARY. The following details shall be specified in the applicable acquisition document:
Test temperature.
Worst case power supply voltages.
Threshold voltage levels for control inputs.
Voltages at logic input terminals for output under test.
Output voltage.
I OLZ maximum positive limit.
METHOD 3 0 1 7
29 May 1987
S o u r c e : h t t p : / / w w w . a s s i s t d o c s . c o m -- D o w n l o a d e d : 2 0 1 3 - 0 2 - 2 5 T 0 4 : 4 2 Z
C h e c k t h e s o u r c e to v e r i f y t h a t this is t h e c u r r e n t v e r s i o n b e f o r e u s e .