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IEEE JOURNAL OF SOLID-STATE CIRCUITS,VOL. 1136 25, NO. 5, OCTOBER 1990 A Voltage Reduction Technique for Battery-Operated Systems VINCENT VON KAENEL, PETER MACKEN, AND MARC G . R. DEGRWWE, MEMBER, IEEE Absfmd -A self-regulatingvoltage reduction circuit is presentedwhich adjusts the internal supply voltage at the lowest value compatible with the speed requirements of the chip, taking temperature and technology parameters into account. Besides enhancing reliability, this new technique also saves power, which is important for battery-operated systems such as laptop computers and portable instrumentation for radio-communication systems. Vdd vact EQUIVALENT CRITICAL PATH SIGNAL COMPARATOR 4, - EOUIVALENT CRITICAL I. INTRODUC~ON S UPPLY voltage reduction of VLSI chips is important OUT I OUT2 to save power and to avoid undesirable effects, such as punchthrough and substrate currents, when smallgeometry technologies are used. In order to remain comI Nn OUTn patible with the external supply voltage standards and the I technology requirements, on-chip voltage reduction techFig. 1. Principle of a self-adjusted voltage reducer. niques can be used. In the past such techniques have been applied to memories [1]-[4], watches, etc., where the on-chip voltage is 11. PRINCIPLE OF SELF-ADJUSTED reduced to a fixed value. Such static systems of reduction VOLTAGE REDUCXION can neither take into account speed requirements nor all technology parameters. The power consumption of a digital circuit is given by In this paper, a new voltage reduction technique based the well-known formula on functional comparison is presented. With this new technique, a regulated system adjusts the supply voltage power = f * c vgD VDDzDC of a digital circuit at the functional boundary for the (1) speed requirements, the temperature, and the technology parameters. In the next section, the principle of the self-adjusted where f is the operating frequency, C is the equivalent technique is discussed. In Section 111 the fixed-voltage capacitance of the circuit, and ZDc is the static current. technique with temperature compensation is presented. Reducing the supply voltage will decrease power conThe results of measurements are given in Section IV. sumption, however, it will also slow d o m the critical path Finally, in Section V possible applications are discussed. of the circuit. If the supply voltage is further reduced, the critical path finally becomes too slow to assure the correct functioning of the chip. The general voltage reduction Manuscript received April 18, 1990; revised May 28, 1990. This work technique presented in Fig. 1 is based on this last obserwas supported by the Centre Electronique Horloger S.A. vation. The following functional blocks need to be added V. Von Kaenel and M. G. R. Degrauwe are with Recherche et DCvelop ement Centre Suisse d’Electronique et de Microtechnique to the circuit: two “equivalent critical paths,” a signal S.A., CL2000 NeuchPtel 7, Switzerland. comparator, and an integrator. P. Macken was with Recherche et Dkvelop ement, Centre Suisse The “equivalent critical path” is a small circuit with d‘Electronique et de Microtechnique S.A., 8H-2OOO Neuchltel 7, Switzerland. He is now with the University of Chicago, Chicago, IL electrical properties which are comparable to those of the 60637. actual critical path of the original circuit.. IEEE Log Number 9037773. - 0018-9200/90/1000-1136$01.00 01990 IEEE + VON KAENEL et al.: VOLTAGE REDUCTION 1137 FOR BATTERY-OPERATED SYSTEMS The signal comparator will detect if there is a difference between the signals coming out of the two equivalent critical paths, one of which is biased at the full voltage supply while the other is biased at a reduced voltage. Due to the feedback loop the system will adjust the reduced voltage so that one “equivalent critical path” is biased at the minimum required value to produce a correct output signal. Since the equivalent critical path has the same behavior as the actual critical path of the original circuit, one can use the reduced voltage as a supply for the original circuit. Eventually a small voltage shift can be implemented to obtain a security margin. In order to reduce the overall power consumption and to have a reliable circuit, it is mandatory to have a small circuit which can model the actual critical path in an accurate way. It can be shown that, in a first-order approximation, the ratio of the delay of a critical path to the period of a ring oscillator is a constant which depends only on the number of stages, the dimensions of the transistors, and the load capacitances. That means that a ring oscillator can be used as an equivalent critical path for all digital circuits. Since by changing the supply voltage of a ring oscillator the frequency changes (VCO), one can implement the system shown in Fig. 1 with a phase-locked loop (PLL)as shown in Fig. 2. The fixed-frequency divider ( N I is used to implement the ratio between the delay of the VCO and that of the actual critical path. The input signal fin, which affects the reduced voltage value, represents the speed requirement. The chip’s general clock frequency can be used as f-,. By adjusting the VCO supply voltage, the PLL causes the VCO to oscillate at N.fi,. Supposing that the dimensions of the VCO transistors are such that the critical path functions correctly at the regulated voltage, the digital circuit will always function correctly, since changing technology parameters, temperature, or the frequency fin affects the VCO in the same way as it affects the circuitry. So it is sufficient to measure or simulate the delay of the critical path at a certain supply voltage and calculate the dimensions of the VCO and the division factor N accordingly. One is then assured that the digital circuit will always work properly. 111. FIXED-VOLTAGE REDUCTOR This technique consists of imposing a fixed reduced supply voltage to the circuit [5]-[7]. In this case there is no activation signal, so the work frequency is fixed. Only static technology parameters can be taken into account by this technique. There is no feedback from the digital circuit to the voltage generator, so there is no functional verification of the circuit. In this way, the reliability is not guaranteed. In the simple circuit like that shown in Fig. 3, the reduced voltage is approximately equal to the maximum Regulated fin-Phase drctector A Charge --L pump LOOP -e voltage filter DIGITAL SYSTEM U U Fig. 2. Implementation of the supply voltage reducer by a PLL. Vdd 0 0 Vred i -I$ 1 7 - 3--c----, vss Fig. 3. Generator of fiied reduced voltage. of both threshold voltages. The main advantages of this approach are the small surface and the low consumption of this circuit. As shown hereunder, some security margins must be employed to ensure that the digital circuit still works in the worst case of technology parameters and temperature. The reduced voltage takes into account technology parameters such as the VT’s and p’s, however, capacitor variation must be considered separately. It is interesting to note that the oxide thickness To, does not influence the speed of a digital circuit in first approximation when the gate capacitors are the dominant load capacitance. For temperature effect, the current reference versus temperature can be modeled as follows: where a is the temperature coefficient of the reference, Trefis some reference temperature, T is the temperature value, and Zpo is the current reference at Tref. The p’s are modeled as follows: where a is the temperature coefficient of the mobility (a= 1.5) and Po is the beta at Trer. It is assumed that the VT’svary linearly with a temperature coefficient of -2 mV/”C. These laws applied to the circuit shown in Fig. 3, and to a digital circuit they give an important characteristic of the fixed reductor circuit, namely the slope of Ked versus temperature as a function of I/red (Fig. 4). By adjusting the ratio of well resistance to polysilicon resistance used for R in the current reference (Fig. 9, it is possible to obtain a similar temperature coefficient for reduced voltage and the digital circuit. 1138 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. - I 25, NO. 5, OCTOBER 1990 Vdd b -6 1 00 I - 7 Ilo 0 5 15 Fig. 4. Slope of - 7 - 20 - vrCd [ V J 7 - 2 5 30 Ked as function of Ked. 5, Vdd liD L - I ,2 t IP IN 1 Path 3 (b) I 0 ++++D.D.D.D.D.D.D.D.D.D- vss - 3 Path 4 Fig. 5. Current reference. Since variations of resistor values affect the current and thus also the value of the reduced voltage, this technique demands the use of large security margins during the design. Because of the low consumption and small area used for the fixed-voltage reduction, this technique is suitable for small digital circuits with low power consumption. IV. MEASUREMENTS In order to show the validity of the proposed selfadjusted principle, the system in Fig. 2 has been integrated in a 2-pm n-well CMOS process. To model the critical path, four test circuits have been implemented: 1) a short series of inverters with the same dimensions as those of the VCO, but charged with an extra gate capacitance at the inverter output (Fig. 6(a)); 2) a long series of these inverters, to see the effect of a long path (Fig. 6(a)); 3) a series of inverters with four NMOS and four PMOS transistors in series, to test the influence of putting transistors in series (Fig. 6(b)); and 4) a frequency divider, which is a small digital circuit (Fig. 6(c)). Furthermore, in order to be able to show the influence of technology variation, a “split lot” integration was done (C) Fig. 6. (a) Schematic of critical paths 1 and 2. (b) Schematic of critical path 3. (c) Schematic of critical path 4. which changed the oxide thickness over 10% and the sum of the threshold voltages of the n- and p-transistor MOS from 1.07 to 1.60 V. As shown in Fig. 7(a) and (b), the ratio of delay of the critical path integrated -to the period of the VCO depends weakly on the supply voltage (Ked)and the temperature. This confirms that a VCO can be used as an equivalent critical path. The variations are caused by foreseeable changes in the gate capacitance near the threshold voltage. If one wants the digital circuit to operate correctly in a range of frequencies (f.,), the operating points should be chosen where the critical path is the slowest relative to the VCO. As a consequence, the regulated voltage will be too high for all other frequencies. Fig. 8 shows the ratio of the regulated supply voltage to the minimum supply voltage, for frequencies of fin ranging from 400 Hz to 4 MHz. For the four cases of critical paths integrated, the regulated voltage is at worst 10% too high, which means that the circuit will always work near the point of lowest power consumption. Technology parameters are accurately tracked, as shown in Fig. 9, which represents the regulated voltage (Ked)for two different wafers. The ratio of the delay of a critical , VON KAENEL t et al.: VOLTAGE REDUCTION FOR BATTERY-OPERATED 2UOolaylPsriod o f 1139 SYSTEMS VCO 1.11 1.011 path 2 / '"(-1 / \\ p a t h- 1 path 4 path 2 path 4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.11 2.0 [VI I . O d p a t h 30.2 a:+ /OIB oh 112 L'O I.'+ 1.i 1 Fig. 8. Ratio of regulated voltage to the minimum voltage necessary to fulfill speed requirements. Vred 0.1 . 7. (b) (a) Ratio of delay of a critical path to the period of the VCO. $b) Ratio of delay of a critical path to the period of the VCO, for three different temperatures. Fi path to the period of the VCO varies less than 20% while the sum of the threshold voltage changes 250 mV. Power consumption for the whole system is only a few microamperes. Tests have shown that it can be reduced to the nanoampere level by operating the voltage regulation system intermittently. Indeed, for a stable fin signal, the rate of variation of the reduced voltage is very slow because of the slow variation of the temperature and technology parameters. The system can operate intermittently by opening the regulation loop for a given time and closing it only in order to compensate for the leakage currents that empty the loop capacitance (Fig' 'O). OTHERAPPLICATIONS V. POSSIBLE In battery-operating systems it is important to detect when the battery should be changed in order to avoid reliability problems. 0.6 Oh If0 I.'Z 114 I.'6 I 1.1 8 - 2.O[V] Fig. 9. Reference frequency as function of regulated voltage two different wafers. ccd, for A common way to detect the end of life (EOL) of a battery is to compare the battery voltage to a fixed boundary value. This fixed value of comparison must be calculated in the worst case of technology and temperature. However, the actual speed requirements, temperature, and technology parameters of the circuit are not taken into account in the detection. That means a fixed value cannot be the optimum value for all cases of technology and temperature because the security margin alters the EOL detection. The best way to detect the EOL of the battery is to use a threshold value that depends on the minimum supply voltage of the digital circuit. When using the proposed voltage reduction technique, the EOL detection is very simple and reliable. It suffices to compare the battery voltage to the reduced voltage supply with a small margin for detection just before the limit as shown in Fig. 11. In this way, the EOL detection is dependent on the technology parameters and the temperature. This allows the 1140 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. - fin-Phase dectector Charge pump - REFERENCES Regulated voltage LOOP filter D IGlTAL SYSTEM I Acttvation f I I I I I 1 Toff ’ I I I Ton I I I c I Ton time ‘ 1 : Toff I Fig. 10. Supply voltage reducer for intermittent operation. I”“““’“ I H. Fukuda et al., “A BICMOS channelless masterslice with on-chip voltage convertor,” in ISSCC Dig. Tech. Papers, Feb. 1989, pp. 176- 177. T. Furuyama et al., “A new on-chip voltage convertor for submicron high density DRAM’S,” in Proc. ESSCIRC, Sept. 1989, pp. 10-12. K. Itoh et al., “ A n experimental 1Mb DRAM with on-chip voltage limiter,” in ISSCC Dig. Tech. Papers, Feb. 1984, pp. 282-283. T. Mano et al., “Circuit techniques for a VLSI memory,” ZEEE .I. Solid-state Circuits, vol. SC-18, pp. 463-470, Oct. 1983. E. Vittoz, “The design of high-performance analog circuit on digital CMOS chips,” IEEE J . Solid-State Circuits, vol. SC-20, no. 3, pp. 522-528, June 1985. M. Degrauwe et al., “Adaptive biasing CMOS amplifier,” IEEE J . Solid-state Circuits, vol. SC-17, no. 3, pp. 657-665, June 1982. E. Vittoz, M. G. R. Degrauwe, and S. Bitz, High-performance crystal oscillator circuits: Theory and application,” IEEE J . SofidState Circuits, vol. 23, no. 3, pp. 774-783, June 1988. S. Chou et al., “Chip voltage: Why less is better,” IEEE Specbum, vol. 24, no. 4, Apr. 1987. I I I I I ’ 25, NO. 5, OCTOBER 1990 EOL time detection Fig. 11. EOL detection for battery-operated systems. Vincent Von Kaenel was born in NeuchPtel, Switzerland, on March 5, 1964. He received the engineering degree in electronics from the Ecole d‘hgtnieur d’yverdon, Yverdon, Switzerland, in 1989. He was employed as a technical collaborator and worked in the development of software for the design automation of building blocks from 1985 to 1987. He is now involved at the Centre Suisse d’Electronique et de Microtechnique S.A., Neuchltel, Switzerland, in the development of systems working at minimum power consumption. Peter Macken was born in Sint Niklaas, Belgium, on November 22, 1962. He received the engineering degree in electronics from the Katholieke Universiteit Leuven’ (KUL), Leuven, Belgium, in 1986. He is currently working towards the Master of Business Administration degree at the University of Chicago, Chicago, IL. He executed a training period from October 1986 to March 1987 at the Centre Suisse d’Electronique et de Microtechnique S.A. (CSEM), NeuchPtel, Switzerland. He developed SRAM cells for watch applications. After completion of military service he came back to CSEM, where he was involved in the development of electronic systems working at minimum power consumption. complete use of the battery with respect to the actual needs of the digital circuit. VI. CONCLUSION In this paper, two techniques of voltage reduction have been presented. Both techniques can significantly reduce the power consumption of digital CMOS circuits. The fixed reduction of voltage is usable for small systems with a low initial consumption. In this case, the optimum voltage is not reached and the correct operation of the circuit is not guaranteed. The self-adjusted reduction of voltage is adapted to bigger digital systems. The correct operation of the digital circuit is guaranteed. The supply voltage is near the optimum for the speed requirements. This new technique is more versatile, more accurate, and more reliable than the fixed one. Marc G . R. Degrauwe (S’78-MJ84) was born in Brussels, Belgium, on August 16, 1957. He received the engineering degree in electronics and the Ph.D. degree in applied sciences from the Katholieke Universiteit Leuven (KUL), Leuven, Belgium, in 1980 and 1983, respectively. During the summer of 1980 he was on leave at the Centre Electronique Horloger S.A. (CEH), NeuchPtel, Switzerland. From autumn 1980 to 1983 he was associated with KUL where he worked on the design of micropower amplifiers and sampled date filters. In July 1983 he returned to CEH. In 1984 when CEH was reorganized into the Swiss Centre of Electronics and Microtechnics (CSEM), he became Head of the Circuits Department. Now he is Head of the Design Automation Division. His actual field of interest is design automation of analog circuits. He is also lecturing on analog circuit design and supervising student work at the University of NeuchPtel. Dr. Degrauwe received the 1987 ESSCIRC Conference Best Paper Award for a paper on crystal oscillators he co-authored.