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Bulletin I27130 rev. G 10/02
IRK.26 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
27 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop feature
already tested and proved as reliable on other IR modules.
Electrical Description
These modules are intended for general purpose
high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature
and motor speed control circuits, UPS and battery
charger.
Major Ratings and Characteristics
Parameters
IRK.26
Units
27
A
IO(RMS) (*)
60
A
ITSM @ 50Hz
400
A
IFSM @ 60Hz
420
A
@ 50Hz
800
A2s
@ 60Hz
730
A2s
8000
A2√s
IT(AV) or IF(AV)
@ 85°C
2
I t
I2√t
VRRM range
400 to 1600
V
TSTG
- 40 to 125
o
TJ
- 40 to125
o
C
C
(*) As AC switch.
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1
IRK.26 Series
Bulletin I27130 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
IRK.26
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IT(AV)
IF(AV)
IRK.26
Units
Conditions
Max. average on-state
current (Thyristors)
27
180o conduction, half sine wave,
Max. average forward
27
TC = 85oC
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
As AC switch
60
I(RMS)
A
or
I(RMS)
ITSM
Max. peak, one cycle
400
t=10ms
No voltage
or
non-repetitive on-state
420
t=8.3ms
reapplied
IFSM
or forward current
335
t=10ms
100% VRRM
350
t=8.3ms
reapplied
470
t=10ms
TJ = 25oC,
490
t=8.3ms
no voltage reapplied
800
t=10ms
No voltage
I2t
Max. I2t for fusing
730
560
510
2
A s
1100
1000
I2√t
Max. I2√t for fusing (1)
VT(TO) Max. value of threshold
rt
VTM
8000
0.92
voltage (2)
0.95
Max. value of on-state
12.11
slope resistance (2)
11.82
A2√s
V
mΩ
Max. peak on-state or
VFM
forward voltage
di/dt
Max. non-repetitive rate
of rise of turned on
1.95
V
150
A/µs
Max. holding current
200
IL
Max. latching current
400
Initial TJ = TJ max.
t=8.3ms
reapplied
t=10ms
TJ = 25oC,
t=8.3ms
no voltage reapplied
t= 0.1 to 10ms, no voltage reappl. TJ =TJ max
TJ = TJ max
Low level (3)
High level (4)
Low level (3)
TJ = TJ max
High level (4)
ITM = π x IT(AV)
TJ = 25oC
IFM = π x IF(AV)
ITM =π x I T(AV), I = 500mA,
g
TJ = 25oC, anode supply = 6V,
mA
2
100% VRRM
tr < 0.5 µs, tp > 6 µs
IH
(4) I > π x IAV
reapplied
t=10ms
Initial TJ = TJ max.
TJ = 25oC, from 0.67 VDRM,
current
(1) I2t for time tx = I2√t x √tx
t=8.3ms
Sinusoidal
half wave,
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V, resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV
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IRK.26 Series
Bulletin I27130 rev. G 10/02
Triggering
Parameters
PGM
IRK. 26
Max. peak gate power
2.5
IGM
2.5
Max. peak gate current
-VGM Max. peak negative
TJ = - 40°C
V
2.5
TJ = 25°C
1.7
TJ = 125°C
270
150
Max. gate current
required to trigger
TJ = - 40°C
TJ = 25°C
mA
TJ = 125°C
80
Max. gate voltage
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
o
0.25
V
TJ = 125 C,
rated VDRM applied
6
mA
TJ = 125oC,
rated VDRM applied
IRK. 26
Units
15
mA
2500 (1 min)
V
that will not trigger
IGD
A
4.0
Max. gate voltage
required to trigger
VGD
W
10
gate voltage
IGT
Conditions
10
PG(AV) Max. average gate power
VGT
Units
Max. gate current
that will not trigger
Blocking
Parameters
IRRM
IDRM
Conditions
Max. peak reverse and
off-state leakage current
TJ = 125oC, gate open circuit
at VRRM, VDRM
VINS
RMS isolation voltage
50 Hz, circuit to base, all terminals
3500 (1 sec)
dv/dt Max. critical rate of rise
shorted
500
TJ = 125oC, linear to 0.67 VDRM,
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.26
TJ
Junction operating
temperature range
- 40 to 125
Tstg
Storage temp. range
- 40 to 125
Units
Conditions
°C
RthJC Max. internal thermal
resistance, junction
0.31
Per module, DC operation
to case
K/W
RthCS Typical thermal resistance
T
Mounting torque ± 10%
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
5
to heatsink
Nm
busbar
wt
Mounting surface flat, smooth and greased
0.1
case to heatsink
3
Approximate weight
110 (4)
Case style
gr (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.26
Sine half wave conduction
180o
0.23
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120o
0.27
90o
0.34
60o
0.48
Rect. wave conduction
30o
0.73
180o
0.17
120o
0.28
90o
0.36
60o
0.49
30o
0.73
Units
°C/W
3
IRK.26 Series
Bulletin I27130 rev. G 10/02
Ordering Information Table
Device Code
IRK
T
26
1
2
3
/
16
A
S90
4
5
6
IRK.27 types
With no auxiliary cathode
1
-
Module type
2
-
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
* * Available with no auxiliary cathode.
To specify change:
26 to 27
e.g. : IRKT27/16A etc.
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKT
IRKH
(1)
~
(1)
~
+
(2)
+
(2)
+
(2)
(3)
(3)
(3)
G1 K1
(4) (5)
IRKN
IRKL
(1)
~
K2 G2
(7) (6)
G1 K1
(4) (5)
(1)
-
(2)
+
+
(3)
K2 G2
(7) (6)
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.26 Series
IRK.26.. Series
R thJC (DC) = 0.62 K/W
120
110
Conduction Angle
100
30°
60°
90°
90
0
5
10
15
25
30
120
110
Conduction Period
100
30°
60°
90°
90
120°
180°
80
0
10
20
DC
30
40
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
40
RMS Limit
20
Conduction Angle
IRK.26.. Series
Per Junction
T J = 125°C
10
0
5
10
15
20
25
30
70
DC
180°
120°
90°
60°
30°
60
50
50
RMS Limit
40
30
Conduction Period
20
IRK.26.. Series
Per Junction
T J = 125°C
10
0
0
10
20
30
40
50
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
400
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
350
300
250
200
IRK.26.. Series
Per Junction
150
IRK.26.. Series
R thJC (DC) = 0.62 K/W
Fig. 1 - Current Ratings Characteristics
180°
120°
90°
60°
30°
30
130
Average On-state Current (A)
50
0
20
180°
Maximum Average On-state Power Loss (W)
80
120°
Maximum Allowable Case Temperature (°C)
130
1
10
100
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27130 rev. G 10/02
400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial TJ = 125°C
No Voltage Reapplied
Rated VRRM Reapplied
350
300
250
200
IRK.26.. Series
Per Junction
150
0.01
0.1
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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5
IRK.26 Series
Bulletin I27130 rev. G 10/02
R thSA
= 0.1
K/ W
W
K/
W
K /W
5
0 .3
K/
K/
W
lta
- De
1.
60
40
3K
/W
Conduction Angle
30
4 K/
W
IRK.26.. Series
Per Module
T J = 125°C
20
10
0
10
20
R
2K
/W
50
0
0.5
7
70
W
K/
80
0.
180°
120°
90°
60°
30°
90
1
Maximum Total On-state Power Loss (W)
100
30
40
50
8 K/W
0
60
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMS Output Current (A)
Fig. 7 - On-state Power Loss Characteristics
10
20
30
40
50
W
R
0
K/
1K
2 x IRK.26.. Series
Single Phase Bridge
Connected
T J = 125°C
50
K/
a
el t
100
0.7
-D
150
5
/W
180°
(Sine)
180°
(Rect)
K
.1
=0
W
W
0.
0
K/
K/
200
SA
R th
0.2
3
0.
Maximum Total Power Loss (W)
250
W
/W
1.5
K/W
3 K/W
8 K/W
0
60
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
0
10
20
30
40
50
60
Total Output Current (A)
70
K/
W
R
50
K/
W
a
3 x IRK.26.. Series
Three Phase Bridge
Connected
TJ = 125°C
elt
-D
100
K/
W
W
K/
0. 7
150
.1
0. 5
=0
120°
(Rect)
200
A
0.
4
W
K/
0.
3
250
0
S
R th
300
2
0.
Maximum Total Power Loss (W)
350
K/W
1 K/
W
1.5 K
/W
3 K/ W
0
80
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.26 Series
Bulletin I27130 rev. G 10/02
Instantaneous On-state Current (A)
1000
100
T J = 25°C
10
T J = 125°C
IRK.26.. Series
Per Junction
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Transient Thermal Impedance Z thJC (K/W)
Fig. 10 - On-state Voltage Drop Characteristics
1
Steady State Value:
R thJC = 0.62 K/W
(DC Operation)
0.1
IRK.26.. Series
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 11 - Thermal Impedance ZthJC Characteristics
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(a)
TJ = 125 °C
1
VGD
IGD
0.1
0.001
0.01
TJ = -40 °C
(b)
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4) (3)
IRK.26.. Series
0.1
1
(2) (1)
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 12- Gate Characteristics
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IRK.26 Series
Bulletin I27130 rev. G 10/02
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
8
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