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Control of size of nano / micro particles synthesized by atmospheric pressure RF discharge M.V. Mishin, K.Y. Zamotin, A.S. Kondrateva, V.S. Protopopova. Investigation of various nano-objects formation is important basement of development of micro and nano-electronics and other important technologies. Nanoparticles formed from different materials are already used in modern techniques to tailor properties on composite materials, ceramics, catalyzing agents etc. Low temperature plasma created in reactive gas ambient by high frequency electric discharge is successfully used to activate chemical vapor deposition processes. Atmospheric pressure discharge has a number of advantages: simplicity of technical implementation, high reactive substance concentration giving significant reaction rate, low heat of a substrate due to low temperature plasma discharge formation [1]. In this work the peculiarities of silicon dioxide micro and nano particle formation in low temperature atmospheric pressure discharge was investigated. Process was initiated in 13.56 MHz capacitive RF helium plasma. RF power was 15 W. Tetraethoxysilane (TEOS) was used as a source of silicon dioxide. The dependence of particle size distribution on discharge parameters was studied. Particles size in the range 0.2 – 3 μm were measured in-situ by optical technique. Distribution of electric potential in reactor was studied by Langmuir probe and additional homebuilt probe [2]. Strong inhomogenity of electric potential distribution along reactor axes was found. Such a distribution was caused by injection of ions from discharge area. Numerical simulations of formed particle motion have indicated notable changes in the way particles shifts through reactor especially in non uniform electric field area. Some of particles can grow in size and coagulate. Possibility to grow particles of predefined size by control of electric potential in reactor zone was experimentally verified. Experimental data correlate well to simulated results. 1. S. E. Alexandrov and M. L. Hitchman, Chem. Vap. Deposition. 11(11-12), 457 (2005). 2. M. V. Mishin, V. S. Protopopova, A. A. Uvarov, S. E. Alexandrov, AIP Advances. 4, 107130 (2014).