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Download Voltage-Divider Bias In the previous bias configurations IC and VCE
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Transcript
Voltage-Divider Bias In the previous bias configurations IC and VCE were a function of (β) However, since β is temperature sensitive, especially for silicon transistors, and the actual value of beta is usually not well defined, we need to develop a bias circuit that is less dependent, or independent of β. The voltage-divider bias configuration of Fig. 4.25 is such a network. If analyzed on an exact basis the sensitivity to changes in beta is quite small. If the circuit parameters are properly chosen, the resulting levels of IC and VCE can be almost totally independent of beta. That is means almost fixed location for Q-point. There are two methods that can be applied to analyze the voltage divider configuration. Exact and approximate methods. Exact Analysis The input side of the network of Fig. 4.25 can be redrawn as shown in Fig. 4.27 for the dc analysis. VCE can be found in same manner as explained earlier: Example 4.7 Determine the dc bias voltage VCE and the current IC for the voltage-divider configuration of Fig. 4.31. Solution: