Download N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus™ low Qg Power

STF7N60M2
N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Qg
Power MOSFET in TO-220FP package
Datasheet - production data
Features
Order code
VDS @
TJmax
RDS(on)
max
ID
STF7N60M2
650 V
0.95 Ω
5A
• Extremely low gate charge
1
2
3
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
TO-220FP
• 100% avalanche tested
• Zener-protected
Applications
Figure 1. Internal schematic diagram
, TAB
• Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
Table 1. Device summary
Order code
Marking
Package
Packaging
STF7N60M2
7N60M2
TO-220FP
Tube
June 2013
This is information on a product in full production.
DocID024894 Rev 1
1/13
www.st.com
Contents
STF7N60M2
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuits
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
.............................................. 8
DocID024894 Rev 1
STF7N60M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
VGS
ID
Parameter
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Value
Unit
± 25
V
(1)
A
5
Drain current (continuous) at TC = 100 °C
(1)
3.5
A
IDM (1)
Drain current (pulsed)
20(1)
A
PTOT
Total dissipation at TC = 25 °C
20
W
VISO
Insulation withstand voltage (RMS) from all three leads to
external heat sink
(t=1 s; TC=25 °C)
2500
V
ID
dv/dt (2)
dv/dt
(3)
Tstg
Tj
Peak diode recovery voltage slope
15
MOSFET dv/dt ruggedness
50
V/ns
Storage temperature
- 55 to 150
°C
Value
Unit
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
3. VDS ≤ 480 V
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case max
6.25
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (pulse width
limited by Tjmax )
1.5
A
EAS
Single pulse avalanche energy (starting Tj=25°C, ID= IAR;
VDD=50)
99
mJ
DocID024894 Rev 1
3/13
13
Electrical characteristics
2
STF7N60M2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 5. On /off states
Symbol
V(BR)DSS
Parameter
Drain-source
breakdown voltage
Test conditions
ID = 1 mA, VGS = 0
Min.
Typ.
Max.
Unit
600
V
IDSS
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
±10
µA
3
4
V
0.86
0.95
Ω
Min.
Typ.
Max.
Unit
-
271
-
pF
-
15.7
-
pF
-
0.68
-
pF
VGS = ± 25 V
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
2
VGS = 10 V, ID = 2.5 A
Table 6. Dynamic
Symbol
Parameter
Test conditions
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer
capacitance
Coss eq.(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0
-
75.5
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7.2
-
Ω
Qg
Total gate charge
-
8.8
-
nC
Qgs
Gate-source charge
-
1.8
-
nC
Qgd
Gate-drain charge
VDD = 480 V, ID = 5 A,
VGS = 10 V
(see Figure 15)
-
4.3
-
nC
VDS = 100 V, f = 1 MHz,
VGS = 0
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Table 7. Switching times
Symbol
td(on)
tr
td(off)
tf
4/13
Parameter
Test conditions
Turn-on delay time
Rise time
Turn-off delay time
VDD = 300 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Fall time
DocID024894 Rev 1
Min.
Typ.
Max. Unit
-
7.6
-
ns
-
7.2
-
ns
-
19.3
-
ns
-
15.9
-
ns
STF7N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
ISD
ISDM (1)
Source-drain current
Source-drain current (pulsed)
VSD (2)
Forward on voltage
trr
Test conditions
ISD = 5 A, VGS = 0
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
trr
Reverse recovery time
Qrr
Reverse recovery charge
IRRM
Reverse recovery current
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
ISD = 5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 19)
Min.
Typ.
Max. Unit
-
5
20
A
A
-
1.6
V
-
275
ns
-
1.55
nC
-
11
A
-
376
ns
-
2.1
nC
-
11
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID024894 Rev 1
5/13
13
Electrical characteristics
2.1
STF7N60M2
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
AM15813v1
ID
(A)
10
s
ai
re n)
s a DS(o
i
th R
in ax
n
io y m
t
b
a
er ed
Op mit
Li
1
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single pulse
0.1
0.01
0.1
10
1
100
VDS(V)
Figure 4. Output characteristics
Figure 5. Transfer characteristics
AM15815v1
ID (A)
9
AM15816v1
ID (A)
VGS=7, 8, 9, 10, 11V
9
6V
8
8
7
7
6
6
5
5
4
4
5V
3
3
2
2
1
0
5
0
10
20
15
AM15824v1
VDS
VDD=480V
ID=5A
12
(V)
VDS
500
10
1
4V
3V
VDS(V)
Figure 6. Gate charge vs gate-source voltage
VGS
(V)
VDS=19V
400
8
0
0
2
4
6
8
10
VGS(V)
Figure 7. Static drain-source on-resistance
AM15817v1
RDS(on)
(Ω)
0.910
VGS=10V
0.900
0.890
0.880
300
0.870
6
200
4
0.860
0.850
100
2
0.840
0
0
6/13
2
4
6
8
10
0
Qg(nC)
0.830
0
DocID024894 Rev 1
1
2
3
4
5
ID(A)
STF7N60M2
Electrical characteristics
Figure 8. Capacitance variations
Figure 9. Output capacitance stored energy
AM15818v1
C
(pF)
AM15819v1
Eoss (µJ)
1000
Ciss
2
100
10
Coss
1
1
Crss
0.1
0.1
1
100
10
Figure 10. Normalized gate threshold voltage
vs. temperature
AM15718v1
VGS(th)
(norm)
1.1
0
0
VDS(V)
300
200
100
500
600
VDS(V)
Figure 11. Normalized on-resistance vs.
temperature
AM15821v1
RDS(on)
(norm)
ID=2.5 A
2.3
ID=250µA
400
2.1
1.0
1.9
1.7
0.9
1.5
1.3
0.8
1.1
0.7
0.9
0.6
-50
0.5
-50
0.7
100
50
0
TJ(°C)
Figure 12. Drain-source diode forward
characteristics
AM15822v1
VSD
(V)
1.4
-25
0
TJ=-50°C
TJ(°C)
AM15823v1
ID = 1mA
1.07
1.05
0.8
1.03
TJ=150°C
75 100
VDS
(norm)
1.11
1
0.6
50
Figure 13. Normalized VDS vs. temperature
1.09
1.2
25
1.01
TJ=25°C
0.99
0.4
0.97
0.2
0.95
0
0.93
0
1
2
3
4
5 ISD(A)
DocID024894 Rev 1
-50 -25
0
25
50
75
100
TJ(°C)
7/13
13
Test circuits
3
STF7N60M2
Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
3.3
μF
2200
RL
μF
IG=CONST
VDD
VGS
100Ω
Vi=20V=VGMAX
VD
RG
2200
μF
D.U.T.
D.U.T.
VG
2.7kΩ
PW
47kΩ
1kΩ
PW
AM01468v1
Figure 16. Test circuit for inductive load
switching and diode recovery times
A
A
AM01469v1
Figure 17. Unclamped inductive load test circuit
L
A
D
G
D.U.T.
FAST
DIODE
B
B
VD
L=100μH
S
3.3
μF
B
25 Ω
1000
μF
D
VDD
2200
μF
3.3
μF
VDD
ID
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 18. Unclamped inductive waveform
Figure 19. Switching time waveform
ton
9%5'66
tdon
9'
toff
tr
tdoff
tf
90%
90%
,'0
10%
,'
9''
10%
0
9''
VDS
90%
VGS
$0Y
8/13
0
DocID024894 Rev 1
10%
AM01473v1
STF7N60M2
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID024894 Rev 1
9/13
13
Package mechanical data
STF7N60M2
Table 9. TO-220FP mechanical data
mm
Dim.
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
10/13
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID024894 Rev 1
STF7N60M2
Package mechanical data
Figure 20. TO-220FP drawing
7012510_Rev_K_B
DocID024894 Rev 1
11/13
13
Revision history
5
STF7N60M2
Revision history
Table 10. Document revision history
12/13
Date
Revision
26-Jun-2013
1
Changes
First release.
DocID024894 Rev 1
STF7N60M2
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT AUTHORIZED FOR USE IN WEAPONS. NOR ARE ST PRODUCTS DESIGNED OR AUTHORIZED FOR USE
IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH
PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR
ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED
FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN
WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE,
AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS.
PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE
CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
DocID024894 Rev 1
13/13
13