Download FGL40N120AND - Mouser Electronics

tm
FGL40N120AND
1200V NPT IGBT
Features
Description
• High speed switching
Employing NPT technology, Fairchild’s AND series of IGBTs
provides low conduction and switching losses. The AND series
offers an solution for application such as induction heating (IH),
motor control, general purpose inverters and uninterruptible
power supplies (UPS).
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 75ns (typ.)
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
C
G
TO-264
G C
E
E
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
Collector Current
@TC = 25°C
Collector Current
@TC = 100°C
ICM(1)
Pulsed Collector Current
IF
Diode Continuous Forward Current
IFM
Diode Maximum Forward Current
PD
@TC = 100°C
FGL40N120AND
Units
1200
V
±25
V
64
A
40
A
160
A
40
A
240
A
Maximum Power Dissipation
@TC = 25°C
500
W
Maximum Power Dissipation
@TC = 100°C
200
W
10
µs
SCWT
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
TJ
Operating Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
300
°C
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.25
°C/W
RθJC(DIODE)
Thermal Resistance, Junction-to-Case
--
0.7
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
25
°C/W
©2008 Fairchild Semiconductor Corporation
FGL40N120AND Rev. A2
1
www.fairchildsemi.com
FGL40N120AND 1200V NPT IGBT
February 2008
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGL40N120AND
FGL40N120AND
TO-264
-
-
25
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1200
--
--
V
BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
±250
nA
IC = 250µA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
3.5
5.5
7.5
V
IC = 40A, VGE = 15V
--
2.6
3.2
V
IC = 40A, VGE = 15V,
TC = 125°C
--
2.9
--
V
IC = 64A, VGE = 15V
--
3.15
--
V
--
3200
--
pF
--
370
--
pF
--
125
--
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
--
15
--
ns
tr
Rise Time
--
20
--
ns
td(off)
Turn-Off Delay Time
--
110
--
ns
tf
Fall Time
--
40
80
ns
Eon
Turn-On Switching Loss
--
2.3
3.45
mJ
Eoff
Turn-Off Switching Loss
--
1.1
1.65
mJ
Ets
Total Switching Loss
--
3.4
5.1
mJ
td(on)
Turn-On Delay Time
--
20
--
ns
tr
Rise Time
--
25
--
ns
td(off)
Turn-Off Delay Time
--
120
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
1.8
--
mJ
Ets
Total Switching Loss
--
4.3
--
mJ
Qg
Total Gate charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600V, IC = 40A,
VGE = 15V
2
FGL40N120AND Rev. A2
--
45
--
ns
--
2.5
--
mJ
--
220
330
nC
--
25
38
nC
--
130
195
nC
www.fairchildsemi.com
FGL40N120AND 1200V NPT IGBT
Package Marking and Ordering Information
C
Symbol
Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery
Current
Qrr
Diode Reverse Recovery Charge
= 25°C unless otherwise noted
Test Conditions
IF = 40A
IF = 40A,
di/dt = 200A/µs
3
FGL40N120AND Rev. A2
Min.
Typ.
Max.
TC = 25°C
--
3.2
4.0
TC = 125°C
--
2.7
--
TC = 25°C
--
75
112
TC = 125°C
--
130
--
TC = 25°C
--
8
12
TC = 125°C
--
13
--
TC = 25°C
--
300
450
TC = 125°C
--
845
--
Units
V
nS
A
nC
www.fairchildsemi.com
FGL40N120AND 1200V NPT IGBT
Electrical Characteristics of DIODE T
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
300
150
TC = 25°C
Common Emitter
VGE = 15V
20V
17V
15V
250
TC = 25°C
120
200
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Saturation Voltage
Characteristics
12V
150
VGE = 10V
100
50
0
TC = 125°C
90
60
30
0
0
2
4
6
8
10
0
Collector-Emitter Voltage, VCE [V]
80
Common Emitter
VGE = 15V
VCC = 600V
Load Current : peak of square wave
70
60
4
80A
Load Current [A]
Collector-Emitter Voltage, VCE [V]
6
Figure 4. Load Current vs. Frequency
3
40A
2
50
40
30
20
IC = 20A
Duty cycle : 50%
TC = 100°C
10
Power Dissipation = 100W
0
1
25
50
75
100
0.1
125
1
Case Temperature, TC [°C]
20
100
1000
Figure 6. Saturation Voltage vs. VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter
TC = 25°C
16
12
8
80A
4
10
Frequency [kHz]
Figure 5. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
4
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
5
2
40A
IC = 20A
0
Common Emitter
TC = 125°C
16
12
8
80A
4
40A
IC = 20A
0
0
4
8
12
16
20
0
Gate-Emitter Voltage, VGE [V]
8
12
16
20
Gate-Emitter Voltage, VGE [V]
4
FGL40N120AND Rev. A2
4
www.fairchildsemi.com
(Continued)
Figure 7. Capacitance Characteristics
6000
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
5000
100
Switching Time [ns]
Capacitance [pF]
Ciss
4000
3000
2000
Coss
1000
tr
Common Emitter
VCC = 600V, VGE = ±15V
td(on)
IC = 40A
Crss
TC = 25°C
TC = 125°C
10
0
1
0
10
10
20
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
50
60
70
Common Emitter
VCC = 600V, VGE = ±15V
TC = 25°C
IC = 40A
td(off)
TC = 125°C
TC = 25°C
10
TC = 125°C
Switching Loss [mJ]
Switching Time [ns]
40
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = ±15V, IC = 40A
1000
30
Gate Resistance, RG [Ω ]
Collector-Emitter Voltage, VCE [V]
100
tf
Eon
Eoff
1
10
0
10
20
30
40
50
60
70
0
10
20
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
40
50
60
70
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = ±15V, RG = 5Ω
Common Emitter
VGE = ±15V, RG = 5Ω
100
30
Gate Resistance, RG [Ω]
TC = 25°C
TC = 25°C
tr
TC = 125°C
Switching Time [ns]
Switching Time [ns]
TC = 125°C
td(on)
td(off)
100
tf
10
20
30
40
50
60
70
20
80
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
5
FGL40N120AND Rev. A2
30
www.fairchildsemi.com
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
VGE = ±15V, RG = 5Ω
TC = 25°C
Switching Loss [mJ]
Eoff
1
0.1
600V
12
10
400V
8
6
4
2
0
20
30
40
50
60
70
80
0
50
Collector Current, IC [A]
100µs
Collector Current, IC [A]
DC Operation
1
Single Nonrepetitive
o
Pulse Tc = 25 C
Curves must be derated
linearly with increase
in temperature
0.01
10
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
250
100
1ms
10
0.1
200
50µs
Ic MAX (Continuous)
0.1
150
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
100
100
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Collector Current, Ic [A]
Vcc = 200V
TC = 25°C
Eon
TC = 125°C
Gate-Emitter Voltage, VGE [V]
10
Common Emitter
RL = 15Ω
14
10
100
1000
1
10
Collector - Emitter Voltage, VCE [V]
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 17. Forward Characteristics
Figure 18. Reverse Recovery Current
10
Reverse Recovery Currnet , Irr [A]
100
o
Forward Current , IF [A]
TJ = 125 C
10
o
TJ = 25 C
1
o
TC = 125 C
di/dt = 200A/µs
8
6
4
di/dt = 100A/µs
2
o
TC = 25 C
0.1
0
1
2
3
4
5
0
0
6
Forward Voltage , VF [V]
20
30
40
50
60
70
Forward Current , IF [A]
6
FGL40N120AND Rev. A2
10
www.fairchildsemi.com
(Continued)
Figure 19. Stored Charge
Figure 20. Reverse Recovery Time
400
Stored Recovery Charge , Qrr [nC]
100
Reverse Recovery Time , trr [ns]
FGL40N120AND 1200V NPT IGBT
Typical Performance Characteristics
90
di/dt = 200A/µs
80
di/dt = 100A/µs
70
60
di/dt = 200A/µs
300
200
di/dt = 100A/µs
100
50
0
10
20
30
40
50
60
70
0
0
Forward Current , IF [A]
10
20
30
40
50
60
70
Forward Current , IF [A]
Figure 21. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.1
0.5
0.2
0.1
0.01
0.05
Pdm
Pdm
t1
t1
0.02
0.01
1E-3
1E-5
t2
t2
single pulse
1E-4
Duty
Dutyfactor
factorDD==t1
t1//t2
t2
Peak
PeakTj
Tj==Pdm
Pdm××Zthjc
Zthjc++TTCC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
7
FGL40N120AND Rev. A2
www.fairchildsemi.com
FGL40N120AND 1200V NPT IGBT
Mechanical Dimensions
(8.30)
(1.00)
(2.00)
20.00 ±0.20
1.50 ±0.20
(7.00)
.20
)
(7.00)
2.50 ±0.10
4.90 ±0.20
(1.50)
(1.50)
2.50 ±0.20
3.00 ±0.20
(1.50)
20.00 ±0.50
0)
.00
(2.00)
(11.00)
2.0
(R
(R1
(0.50)
0 ±0
ø3.3
(9.00)
(9.00)
(8.30)
(4.00)
20.00 ±0.20
6.00 ±0.20
TO-264
+0.25
1.00 –0.10
+0.25
0.60 –0.10
2.80 ±0.30
(2.80)
5.45TYP
[5.45 ±0.30]
(0.15)
(1.50)
3.50 ±0.20
5.00 ±0.20
5.45TYP
[5.45 ±0.30]
Dimensions in Millimeters
8
FGL40N120AND Rev. A2
www.fairchildsemi.com
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global
subsidianries, and is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EZSWITCH™ *
FPS™
FRFET®
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
™
®
tm
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FlashWriter® *
®
PDP-SPM™
Power220®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
tm
SupreMOS™
SyncFET™
®
The Power Franchise®
tm
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury to the user.
A critical component in any component of a life support, device
or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I33
9
FGL40N120AND Rev. A2
www.fairchildsemi.com
FGL40N120AND 1200V NPT IGBT
TRADEMARKS
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Fairchild Semiconductor:
FGL40N120ANDTU