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GD15PJK120L1S IGBT Module STARPOWER IGBT SEMICONDUCTORTM GD15PJK120L1S Preliminary Molding Type Module 1200V/15A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness.They are designed for the applications such as general inverters and UPS. Features z z z z z 10μs short circuit capability VCE(sat) with positive temperature coefficient Square RBSOA Low inductance case Fast & soft reverse recovery anti-parallel FWD Typical Applications z z z Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply ©2009 STARPOWER Semiconductor Ltd. 12/9/2009 1/9 Preliminary GD15PJK120L1S IGBT Module IGBT-inverter TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description GD15PJK120L1S Units VCES Collector-Emitter Voltage @ Tj=25℃ 1200 V VGES Gate-Emitter Voltage ±20 V 30 15 A IC Collector Current @ TC=25℃ @ TC=80℃ ICM Pulsed Collector Current tp=1ms 30 A Ptot Total Power Dissipation @ Tj=150℃ 147 W TSC Short Circuit Withstand Time 10 μs @ Tj=150℃ Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BVCES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA 1200 V On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions Min. Typ. Max. Units IC=250μA,VCE=VGE, Tj=25℃ 4.0 5.4 6.0 V IC=15A,VGE=15V, Tj=25℃ 2.46 IC=15A,VGE=15V, Tj=125℃ 2.85 V Switching Characteristics Symbol Parameter Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss Test Conditions VCC=600V, IC=15A, RG=22Ω,VGE =±15V, Tj=25℃ VCC=600V, IC=15A, RG=22Ω,VGE =±15V, Tj=125℃ ©2009 STARPOWER Semiconductor Ltd. 12/9/2009 Min. Typ. Max. Units 1.30 mJ 0.90 mJ 2.20 mJ 1.70 mJ 1.25 mJ 2.95 mJ 2/9 Preliminary GD15PJK120L1S IGBT Module td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance ISC SC Data VCC=600V, IC=15A, RG=22Ω,VGE =±15V, Tj=125℃ VCE=30V,f=1Mhz, VGE=0V TP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V 50 ns 50 ns 300 ns 220 ns 1285 pF 280 pF 35 pF TBD A DIODE-inverter TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description VRRM Collector-Emitter Voltage @ Tj=25℃ IF DC Forward Current IFRM Repetitive Peak Forward Current 2 It GD15PJK120L1S Units 1200 V 15 A 30 A 50 A2s tp=1ms 2 I t-value,VR=0V,tp=10ms,Tj=125℃ Characteristics Values Symbol Parameter VF Diode Forward Voltage Qrr Diode Reverse Recovery Charge IRM Diode Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=15A,VGE=0V IF=15A, VR=600V, di/dt=-900A/μs, VGE=-15V ©2009 STARPOWER Semiconductor Ltd. Min. Typ. Tj=25℃ 2.05 Tj=125℃ 2.15 Tj=25℃ 1.6 Tj=125℃ 2.8 Tj=25℃ 28 Tj=125℃ 27 Tj=25℃ 0.5 Tj=125℃ 1.0 12/9/2009 3/9 Max. Units V μC A mJ Preliminary GD15PJK120L1S IGBT Module DIODE-rectifier TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description GD15PJK120L1S Units 1600 V VRRM Collector-Emitter Voltage @ Tj=25℃ IF RMSM Forward Current RMS Maximum Per Diode @ TC=80℃ 25 A I RMSM Maximum RMS Current at Rectifier output @ TC=80℃ 25 A IFSM Surge Forward Current VR=0V, tp=10ms,Tj=45℃ 270 A 360 A2s 2 It 2 I t-value,VR=0V, tp=10ms, Tj=45℃ Characteristics Values Symbol Parameter Test Conditions VF Diode Forward Voltage IF=30A IR Reverse Current Tj=25℃,VR=1600V Min. Typ. Tj=25℃ 1.29 Tj=125℃ 1.31 Max. Units V 1 mA IGBT-brake-chopper TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description GD15PJK120L1S Units VCES Collector-Emitter Voltage @ Tj=25℃ 1200 V VGES Gate-Emitter Voltage ±20 V 30 15 A IC Collector Current @ TC=25℃ @ TC=80℃ ICM Pulsed Collector Current tp=1ms 30 A Ptot Total Power Dissipation @ Tj=150℃ 156 W TSC Short Circuit Withstand Time 10 μs @ Tj=150℃ Off Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units BVCES Collector-Emitter Breakdown Voltage Tj=25℃ ICES Collector Cut-Off Current VCE=VCES,VGE=0V, Tj=25℃ 5.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V, Tj=25℃ 400 nA ©2009 STARPOWER Semiconductor Ltd. 1200 12/9/2009 V 4/9 Preliminary GD15PJK120L1S IGBT Module On Characteristics Symbol VGE(th) VCE(sat) Parameter Gate-Emitter Threshold Voltage Collector to Emitter Saturation Voltage Test Conditions Min. Typ. Max. Units IC=250μA,VCE=VGE, Tj=25℃ 4.0 5.4 6.0 V IC=15A,VGE=15V, Tj=25℃ 2.46 IC=15A,VGE=15V, Tj=125℃ 2.85 V Switching Characteristics Symbol Parameter Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Etot Total Switching Loss td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance ISC SC Data Test Conditions Min. VCC=600V,IC=15A, RG=22Ω,VGE =±15V, Tj=25℃ VCC=600V,IC=15A, RG=22Ω,VGE =±15V, Tj=125℃ VCC=600V,IC=15A, RG=22Ω,VGE =±15V, Tj=125℃ VCE=30V,f=1Mhz, VGE=0V TP≤10μs,VGE=15V, Tj=125℃,VCC=900V, VCEM≤1200V ©2009 STARPOWER Semiconductor Ltd. 12/9/2009 5/9 Typ. Max. Units 1.30 mJ 0.90 mJ 2.20 mJ 1.70 mJ 1.25 mJ 2.95 mJ 50 ns 50 ns 300 ns 220 ns 1285 pF 280 pF 35 pF TBD A Preliminary GD15PJK120L1S IGBT Module DIODE-brake-chopper TC=25℃ unless otherwise noted Maximum Rated Values Symbol Description VRRM Collector-Emitter Voltage @ Tj=25℃ IF DC Forward Current IFRM Repetitive Peak Forward Current 2 It GD15PJK120L1S Units 1200 V 15 A 30 A 20 A2s tp=1ms 2 I t-value,VR=0V, tp=10ms, Tj=125℃ Characteristics Values Symbol Parameter VF Diode Forward Voltage Qr Diode Reverse Recovered charge IRM Diode Peak Reverse Recovery Current Erec Reverse Recovery Energy Test Conditions IF=15A,VGE=0V IF=15A, VR=600V, di/dt=-300A/μs, VGE=-15V Min. Typ. Tj=25℃ 2.05 Tj=125℃ 2.30 Tj=25℃ 1.5 Tj=125℃ 2.9 Tj=25℃ 15 Tj=125℃ 15 Tj=25℃ 0.5 Tj=125℃ 1.1 Max. Units V μC A mJ Electrical Characteristics of NTC TC=25℃ unless otherwise noted Symbol Parameter R25 Rated resistance ∆R/R Deviation of R100 P25 Power dissipation B25/50 B-value Test Conditions Min. Typ. Max. 5.0 R100=493.3Ω -5 R2=R25exp[B25/50(1/T2-1/(298.1 5K))] ©2009 STARPOWER Semiconductor Ltd. 12/9/2009 3375 6/9 Units kΩ 5 % 20.0 mW K Preliminary GD15PJK120L1S IGBT Module IGBT Module Symbol Parameter Min. VISO Isolation Voltage RMS,f=50Hz,t=1min LCE Typ. Max. Units 2500 V Stray Inductance 40 nH RCC’+EE’ Module Lead Resistance, Terminal to Chip @ TC=25℃ 10 mΩ RθJC Junction-to-Case (per IGBT-inverter) Junction-to-Case (per DIODE-inverter) Junction-to-Case (per DIODE-rectifier) Junction-to-Case (per IGBT-brake-chopper) Junction-to-Case (per DIODE-brake-chopper) RθCS Case-to-Sink (Conductive grease applied) Tj Maximum Junction Temperature TSTG Storage Temperature Range F Mounting Force Per Clamp G Weight of Module ©2009 STARPOWER Semiconductor Ltd. 0.85 1.61 1.08 0.80 1.92 0.03 K/W 150 ℃ -40 125 ℃ 40 80 N 36 12/9/2009 K/W 7/9 g Preliminary GD15PJK120L1S IGBT Module Equivalent Circuit Schematic Package Dimension Dimensions in Millimeters ©2009 STARPOWER Semiconductor Ltd. 12/9/2009 8/9 Preliminary GD15PJK120L1S IGBT Module Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. ©2009 STARPOWER Semiconductor Ltd. 12/9/2009 9/9 Preliminary