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GD15PJK120L1S
IGBT Module
STARPOWER
IGBT
SEMICONDUCTORTM
GD15PJK120L1S
Preliminary
Molding Type Module
1200V/15A PIM in one-package
General Description
STARPOWER IGBT Power Module provides ultra
low conduction and switching loss as well as short
circuit ruggedness.They are designed for the
applications such as general inverters and UPS.
Features
z
z
z
z
z
10μs short circuit capability
VCE(sat) with positive temperature coefficient
Square RBSOA
Low inductance case
Fast & soft reverse recovery anti-parallel FWD
Typical Applications
z
z
z
Inverter for motor drive
AC and DC servo drive amplifier
Uninterruptible power supply
©2009 STARPOWER Semiconductor Ltd.
12/9/2009
1/9
Preliminary
GD15PJK120L1S
IGBT Module
IGBT-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
GD15PJK120L1S
Units
VCES
Collector-Emitter Voltage @ Tj=25℃
1200
V
VGES
Gate-Emitter Voltage
±20
V
30
15
A
IC
Collector Current
@ TC=25℃
@ TC=80℃
ICM
Pulsed Collector Current
tp=1ms
30
A
Ptot
Total Power Dissipation
@ Tj=150℃
147
W
TSC
Short Circuit Withstand Time
10
μs
@ Tj=150℃
Off Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVCES
Collector-Emitter
Breakdown Voltage
Tj=25℃
ICES
Collector Cut-Off Current
VCE=VCES,VGE=0V,
Tj=25℃
5.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25℃
400
nA
1200
V
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
Test Conditions
Min.
Typ.
Max.
Units
IC=250μA,VCE=VGE,
Tj=25℃
4.0
5.4
6.0
V
IC=15A,VGE=15V,
Tj=25℃
2.46
IC=15A,VGE=15V,
Tj=125℃
2.85
V
Switching Characteristics
Symbol
Parameter
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
Etot
Total Switching Loss
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
Etot
Total Switching Loss
Test Conditions
VCC=600V, IC=15A,
RG=22Ω,VGE =±15V,
Tj=25℃
VCC=600V, IC=15A,
RG=22Ω,VGE =±15V,
Tj=125℃
©2009 STARPOWER Semiconductor Ltd.
12/9/2009
Min.
Typ.
Max.
Units
1.30
mJ
0.90
mJ
2.20
mJ
1.70
mJ
1.25
mJ
2.95
mJ
2/9
Preliminary
GD15PJK120L1S
IGBT Module
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
ISC
SC Data
VCC=600V, IC=15A,
RG=22Ω,VGE =±15V,
Tj=125℃
VCE=30V,f=1Mhz,
VGE=0V
TP≤10μs,VGE=15V,
Tj=125℃,VCC=900V,
VCEM≤1200V
50
ns
50
ns
300
ns
220
ns
1285
pF
280
pF
35
pF
TBD
A
DIODE-inverter TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
VRRM
Collector-Emitter Voltage @ Tj=25℃
IF
DC Forward Current
IFRM
Repetitive Peak Forward Current
2
It
GD15PJK120L1S
Units
1200
V
15
A
30
A
50
A2s
tp=1ms
2
I t-value,VR=0V,tp=10ms,Tj=125℃
Characteristics Values
Symbol
Parameter
VF
Diode Forward
Voltage
Qrr
Diode Reverse
Recovery Charge
IRM
Diode Peak
Reverse Recovery
Current
Erec
Reverse Recovery
Energy
Test Conditions
IF=15A,VGE=0V
IF=15A,
VR=600V,
di/dt=-900A/μs,
VGE=-15V
©2009 STARPOWER Semiconductor Ltd.
Min.
Typ.
Tj=25℃
2.05
Tj=125℃
2.15
Tj=25℃
1.6
Tj=125℃
2.8
Tj=25℃
28
Tj=125℃
27
Tj=25℃
0.5
Tj=125℃
1.0
12/9/2009
3/9
Max.
Units
V
μC
A
mJ
Preliminary
GD15PJK120L1S
IGBT Module
DIODE-rectifier TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
GD15PJK120L1S
Units
1600
V
VRRM
Collector-Emitter Voltage @ Tj=25℃
IF RMSM
Forward Current RMS Maximum Per Diode
@ TC=80℃
25
A
I RMSM
Maximum RMS Current at Rectifier output
@ TC=80℃
25
A
IFSM
Surge Forward Current VR=0V, tp=10ms,Tj=45℃
270
A
360
A2s
2
It
2
I t-value,VR=0V, tp=10ms, Tj=45℃
Characteristics Values
Symbol
Parameter
Test Conditions
VF
Diode Forward
Voltage
IF=30A
IR
Reverse Current
Tj=25℃,VR=1600V
Min.
Typ.
Tj=25℃
1.29
Tj=125℃
1.31
Max.
Units
V
1
mA
IGBT-brake-chopper TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
GD15PJK120L1S
Units
VCES
Collector-Emitter Voltage @ Tj=25℃
1200
V
VGES
Gate-Emitter Voltage
±20
V
30
15
A
IC
Collector Current
@ TC=25℃
@ TC=80℃
ICM
Pulsed Collector Current
tp=1ms
30
A
Ptot
Total Power Dissipation
@ Tj=150℃
156
W
TSC
Short Circuit Withstand Time
10
μs
@ Tj=150℃
Off Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BVCES
Collector-Emitter
Breakdown Voltage
Tj=25℃
ICES
Collector Cut-Off Current
VCE=VCES,VGE=0V,
Tj=25℃
5.0
mA
IGES
Gate-Emitter Leakage
Current
VGE=VGES,VCE=0V,
Tj=25℃
400
nA
©2009 STARPOWER Semiconductor Ltd.
1200
12/9/2009
V
4/9
Preliminary
GD15PJK120L1S
IGBT Module
On Characteristics
Symbol
VGE(th)
VCE(sat)
Parameter
Gate-Emitter Threshold
Voltage
Collector to Emitter
Saturation Voltage
Test Conditions
Min.
Typ.
Max.
Units
IC=250μA,VCE=VGE,
Tj=25℃
4.0
5.4
6.0
V
IC=15A,VGE=15V,
Tj=25℃
2.46
IC=15A,VGE=15V,
Tj=125℃
2.85
V
Switching Characteristics
Symbol
Parameter
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
Etot
Total Switching Loss
Eon
Turn-On Switching
Loss
Eoff
Turn-Off Switching
Loss
Etot
Total Switching Loss
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
ISC
SC Data
Test Conditions
Min.
VCC=600V,IC=15A,
RG=22Ω,VGE =±15V,
Tj=25℃
VCC=600V,IC=15A,
RG=22Ω,VGE =±15V,
Tj=125℃
VCC=600V,IC=15A,
RG=22Ω,VGE =±15V,
Tj=125℃
VCE=30V,f=1Mhz,
VGE=0V
TP≤10μs,VGE=15V,
Tj=125℃,VCC=900V,
VCEM≤1200V
©2009 STARPOWER Semiconductor Ltd.
12/9/2009
5/9
Typ.
Max.
Units
1.30
mJ
0.90
mJ
2.20
mJ
1.70
mJ
1.25
mJ
2.95
mJ
50
ns
50
ns
300
ns
220
ns
1285
pF
280
pF
35
pF
TBD
A
Preliminary
GD15PJK120L1S
IGBT Module
DIODE-brake-chopper TC=25℃ unless otherwise noted
Maximum Rated Values
Symbol
Description
VRRM
Collector-Emitter Voltage @ Tj=25℃
IF
DC Forward Current
IFRM
Repetitive Peak Forward Current
2
It
GD15PJK120L1S
Units
1200
V
15
A
30
A
20
A2s
tp=1ms
2
I t-value,VR=0V, tp=10ms, Tj=125℃
Characteristics Values
Symbol
Parameter
VF
Diode Forward
Voltage
Qr
Diode Reverse
Recovered charge
IRM
Diode Peak
Reverse Recovery
Current
Erec
Reverse Recovery
Energy
Test Conditions
IF=15A,VGE=0V
IF=15A,
VR=600V,
di/dt=-300A/μs,
VGE=-15V
Min.
Typ.
Tj=25℃
2.05
Tj=125℃
2.30
Tj=25℃
1.5
Tj=125℃
2.9
Tj=25℃
15
Tj=125℃
15
Tj=25℃
0.5
Tj=125℃
1.1
Max.
Units
V
μC
A
mJ
Electrical Characteristics of NTC TC=25℃ unless otherwise noted
Symbol
Parameter
R25
Rated resistance
∆R/R
Deviation of R100
P25
Power dissipation
B25/50
B-value
Test Conditions
Min.
Typ.
Max.
5.0
R100=493.3Ω
-5
R2=R25exp[B25/50(1/T2-1/(298.1
5K))]
©2009 STARPOWER Semiconductor Ltd.
12/9/2009
3375
6/9
Units
kΩ
5
%
20.0
mW
K
Preliminary
GD15PJK120L1S
IGBT Module
IGBT Module
Symbol
Parameter
Min.
VISO
Isolation Voltage RMS,f=50Hz,t=1min
LCE
Typ.
Max.
Units
2500
V
Stray Inductance
40
nH
RCC’+EE’
Module Lead Resistance, Terminal to Chip
@ TC=25℃
10
mΩ
RθJC
Junction-to-Case (per IGBT-inverter)
Junction-to-Case (per DIODE-inverter)
Junction-to-Case (per DIODE-rectifier)
Junction-to-Case (per IGBT-brake-chopper)
Junction-to-Case (per DIODE-brake-chopper)
RθCS
Case-to-Sink (Conductive grease applied)
Tj
Maximum Junction Temperature
TSTG
Storage Temperature Range
F
Mounting Force Per Clamp
G
Weight of Module
©2009 STARPOWER Semiconductor Ltd.
0.85
1.61
1.08
0.80
1.92
0.03
K/W
150
℃
-40
125
℃
40
80
N
36
12/9/2009
K/W
7/9
g
Preliminary
GD15PJK120L1S
IGBT Module
Equivalent Circuit Schematic
Package Dimension
Dimensions in Millimeters
©2009 STARPOWER Semiconductor Ltd.
12/9/2009
8/9
Preliminary
GD15PJK120L1S
IGBT Module
Terms and Conditions of Usage
The data contained in this product datasheet is exclusively intended for technically trained staff.
you and your technical departments will have to evaluate the suitability of the product for the
intended application and the completeness of the product data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is
granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or
which concerns the specific application of our product, please contact the sales office, which is
responsible for you (see www.powersemi.cc), For those that are specifically interested we may
provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on
the types in question please contact the sales office, which is responsible for you.
Should you intend to use the Product in aviation applications, in health or live endangering or life
support applications, please notify.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.
©2009 STARPOWER Semiconductor Ltd.
12/9/2009
9/9
Preliminary