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MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE B D X Q X Q X Z - M5 THD (7 TYP.) G u P Eu P G v P Ev P G wP EwP G u N Eu N G v N Ev N G wN EwN S N P P P R L C J A N U V W N E T K F M M U G M AA M AA Y - DIA. (4 TYP.) TAB #110, t = 0.5 H V P P GuP EuP U GvP EvP V GwP EwP W GuN EuN GvN EvN GwN EwN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking N N Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.21 107.0 P 0.57 14.5 B 4.02 102.0 Q 0.55 14.0 C 3.543±0.01 90.0±0.25 R 0.47 12.0 D 3.15±0.01 80.0±0.25 S 0.43 11.0 E 2.01 51.0 T 0.39 10.0 F 1.38 35.0 U 0.33 8.5 G 1.28 32.5 V 0.30 7.5 H 1.26 Max. 32.0 Max X 0.24 6.0 J 1.18 30.0 Y 0.22 5.5 K 0.98 25.0 Z M5 Metric M5 AA 0.08 2.0 L 0.96 24.5 M 0.79 20.0 N 0.67 17.0 Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM75TF-24H is a 1200V (VCES), 75 Ampere Six-IGBT Module. Type Current Rating Amperes VCES Volts (x 50) CM 75 24 Sep.2000 MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Symbol Ratings Units Junction Temperature Tj –40 to 150 °C Storage Temperature Tstg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Pc 600 Watts Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N·m Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N·m – 830 Grams Viso 2500 Vrms Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – Gate Leakage Current IGES VGE = VGES, VCE = 0V – Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V 4.5 Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V – IC = 75A, VGE = 15V, Tj = 150°C Total Gate Charge QG VCC = 600V, IC = 75A, VGE = 15V Emitter-Collector Voltage VEC IE = 75A, VGE = 0V Typ. Max. Units – 1.0 mA – 0.5 µA 6.0 7.5 Volts 2.5 3.4** Volts – 2.25 – Volts – 375 – nC – – 3.5 Vrms Test Conditions Min. Typ. Max. Units – – 15 VGE = 0V, VCE = 10V – – ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes nF 5.3 nF Reverse Transfer Capacitance Cres – – 3 nF Resistive Turn-on Delay Time td(on) – – 150 ns Load Rise Time Switching Turn-off Delay Time Time Fall Time tr VCC = 600V, IC = 75A, – – 350 ns td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω – – 250 ns – – 350 ns Diode Reverse Recovery Time trr tf IE = 75A, diE/dt = –150A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = –150A/µs – 0.56 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.21 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.47 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.025 °C/W Sep.2000 MITSUBISHI IGBT MODULES CM75TF-24H HIGH POWER SWITCHING USE INSULATED TYPE 150 15 120 Tj = 25oC 11 90 10 60 9 30 7 VCE = 10V Tj = 25°C Tj = 125°C 120 90 60 30 8 0 0 0 2 4 6 8 0 10 4 8 12 16 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 20 0 30 60 90 120 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 6 IC = 75A 4 2 IC = 30A CAPACITANCE, Cies, Coes, Cres, (nF) IC = 150A 102 7 5 3 2 101 7 5 0 4 8 12 16 1.0 20 2.0 2.5 3.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 td(on) tr VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 103 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) Cres 102 101 di/dt = -150A/µsec Tj = 25°C 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE Irr 101 100 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 t rr 10-1 10-1 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) tf 101 101 1.5 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 Coes 100 VGE = 0V 3 0 Cies 101 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) EMITTER CURRENT, IE, (AMPERES) 8 Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) 2 Tj = 25°C 150 102 3 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 SWITCHING TIME, (ns) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 75A 16 VCC = 400V VCC = 600V 12 8 4 0 0 150 300 450 600 GATE CHARGE, QG, (nC) Sep.2000 MITSUBISHI IGBT MODULES CM75TF-24H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.21°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.47°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.2000