Download CM75TF-24H

MITSUBISHI IGBT MODULES
CM75TF-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
B
D
X Q X Q X
Z - M5 THD
(7 TYP.)
G u P Eu P
G v P Ev P
G wP EwP
G u N Eu N
G v N Ev N
G wN EwN
S
N
P
P
P
R
L
C
J
A
N
U
V
W
N
E
T
K
F
M
M
U
G
M
AA
M
AA
Y - DIA.
(4 TYP.)
TAB #110, t = 0.5
H
V
P
P
GuP
EuP
U
GvP
EvP
V
GwP
EwP
W
GuN
EuN
GvN
EvN
GwN
EwN
Features:
u Low Drive Power
u Low VCE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
N
N
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
Dimensions
Inches
Millimeters
A
4.21
107.0
P
0.57
14.5
B
4.02
102.0
Q
0.55
14.0
C
3.543±0.01
90.0±0.25
R
0.47
12.0
D
3.15±0.01
80.0±0.25
S
0.43
11.0
E
2.01
51.0
T
0.39
10.0
F
1.38
35.0
U
0.33
8.5
G
1.28
32.5
V
0.30
7.5
H
1.26 Max.
32.0 Max
X
0.24
6.0
J
1.18
30.0
Y
0.22
5.5
K
0.98
25.0
Z
M5 Metric
M5
AA
0.08
2.0
L
0.96
24.5
M
0.79
20.0
N
0.67
17.0
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six
IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified system assembly and thermal management.
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM75TF-24H
is a 1200V (VCES), 75 Ampere
Six-IGBT Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM
75
24
Sep.2000
MITSUBISHI IGBT MODULES
CM75TF-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Symbol
Ratings
Units
Junction Temperature
Tj
–40 to 150
°C
Storage Temperature
Tstg
–40 to 125
°C
Collector-Emitter Voltage (G-E SHORT)
VCES
1200
Volts
Gate-Emitter Voltage (C-E SHORT)
VGES
±20
Volts
IC
75
Amperes
ICM
150*
Amperes
IE
75
Amperes
Peak Emitter Current**
IEM
150*
Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C)
Pc
600
Watts
Mounting Torque, M5 Main Terminal
–
1.47 ~ 1.96
N·m
Mounting Torque, M5 Mounting
–
1.47 ~ 1.96
N·m
–
830
Grams
Viso
2500
Vrms
Collector Current (TC = 25°C)
Peak Collector Current
Emitter Current** (TC = 25°C)
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current
ICES
VCE = VCES, VGE = 0V
–
Gate Leakage Current
IGES
VGE = VGES, VCE = 0V
–
Gate-Emitter Threshold Voltage
VGE(th)
IC = 7.5mA, VCE = 10V
4.5
Collector-Emitter Saturation Voltage
VCE(sat)
IC = 75A, VGE = 15V
–
IC = 75A, VGE = 15V, Tj = 150°C
Total Gate Charge
QG
VCC = 600V, IC = 75A, VGE = 15V
Emitter-Collector Voltage
VEC
IE = 75A, VGE = 0V
Typ.
Max.
Units
–
1.0
mA
–
0.5
µA
6.0
7.5
Volts
2.5
3.4**
Volts
–
2.25
–
Volts
–
375
–
nC
–
–
3.5
Vrms
Test Conditions
Min.
Typ.
Max.
Units
–
–
15
VGE = 0V, VCE = 10V
–
–
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Input Capacitance
Cies
Output Capacitance
Coes
nF
5.3
nF
Reverse Transfer Capacitance
Cres
–
–
3
nF
Resistive
Turn-on Delay Time
td(on)
–
–
150
ns
Load
Rise Time
Switching
Turn-off Delay Time
Time
Fall Time
tr
VCC = 600V, IC = 75A,
–
–
350
ns
td(off)
VGE1 = VGE2 = 15V, RG = 4.2Ω
–
–
250
ns
–
–
350
ns
Diode Reverse Recovery Time
trr
tf
IE = 75A, diE/dt = –150A/µs
–
–
250
ns
Diode Reverse Recovery Charge
Qrr
IE = 75A, diE/dt = –150A/µs
–
0.56
–
µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Rth(j-c)
Per IGBT
–
–
0.21
°C/W
Thermal Resistance, Junction to Case
Rth(j-c)
Per FWDi
–
–
0.47
°C/W
Contact Thermal Resistance
Rth(c-f)
Per Module, Thermal Grease Applied
–
–
0.025
°C/W
Sep.2000
MITSUBISHI IGBT MODULES
CM75TF-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
150
15
120
Tj = 25oC
11
90
10
60
9
30
7
VCE = 10V
Tj = 25°C
Tj = 125°C
120
90
60
30
8
0
0
0
2
4
6
8
0
10
4
8
12
16
VGE = 15V
Tj = 25°C
Tj = 125°C
4
3
2
1
0
20
0
30
60
90
120
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. VCE
(TYPICAL)
6
IC = 75A
4
2
IC = 30A
CAPACITANCE, Cies, Coes, Cres, (nF)
IC = 150A
102
7
5
3
2
101
7
5
0
4
8
12
16
1.0
20
2.0
2.5
3.0
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 4.2Ω
Tj = 125°C
102
COLLECTOR CURRENT, IC, (AMPERES)
103
REVERSE RECOVERY TIME, t rr, (ns)
103
td(off)
Cres
102
101
di/dt = -150A/µsec
Tj = 25°C
101
EMITTER CURRENT, IE, (AMPERES)
101
102
GATE CHARGE, VGE
Irr
101
100
100
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
102
t rr
10-1
10-1
3.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
tf
101
101
1.5
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
103
Coes
100
VGE = 0V
3
0
Cies
101
100
102
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
EMITTER CURRENT, IE, (AMPERES)
8
Tj = 25°C
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
2
Tj = 25°C
150
102
3
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
5
12
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
VGE = 20V
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
150
SWITCHING TIME, (ns)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
IC = 75A
16
VCC = 400V
VCC = 600V
12
8
4
0
0
150
300
450
600
GATE CHARGE, QG, (nC)
Sep.2000
MITSUBISHI IGBT MODULES
CM75TF-24H
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.21°C/W
10-1
10-1
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c)
Zth = Rth • (NORMALIZED VALUE)
HIGH POWER SWITCHING USE
INSULATED TYPE
10-3
101
100
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10-2
10-1
100
101
Single Pulse
TC = 25°C
Per Unit Base = R th(j-c) = 0.47°C/W
10-1
10-1
10-2
10-2
10-3
10-5
10-4
10-3
10-3
TIME, (s)
Sep.2000