Download CM10AD05-12H

MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
CM10AD00-12H
¡IC ..................................................................... 10A
¡VCES ............................................................ 600V
¡Insulated Type
¡CIB Module
3φ Inverter + 3φ Converter + Brake
Thyristor + Thermistor + Current shunt
resistor
APPLICATION
AC & DC motor controls, General purpose inverters
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
www.BDTIC.com/MITSUBISHI
100
90±0.25
8
8
8
8
GT
P1
12
GUP
EUP
P2
N
8
N1
EVP
13
GVP EWP
P
1
2-φ4.5±0.25 MOUNTING HOLES
(1)
7.5
0.8
2.54 2.54 2.54
7.62 7.62
8
5
GWP
t=0.6
MAIN CIRCUIT TERMINAL
φ6
φ6
φ2.5
18
56
5 5
53±0.5
18
φ2.5
PPS
0.6
t=0.6
PPS
R
S
T
B
U
V
TH2
W GB
E
8
8
TH1
7.5 8
8
8
8
2.54
90±0.3
8
P1 GT
8
2.54
2.54
2.54
2.54
R
S
13
4 10
T
LABEL
CONTROL CIRCUIT TERMINAL
2-R5
GUN
GVN
GWN
P2
P
B
GUP
GVP
GWP
EUP
EVP
EWP
GUN
GVN
GWN
GB
N1 TH1 TH2 (sense terminal) N U
V
W
E
CIRCUIT DIAGRAM
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
VCES
Collector-emitter voltage
Gate-emitter voltage
VGES
IC
Collector Current
I CM
I E (Note.1)
Emitter Current
I EM (Note.1)
PC (Note.3) Maximum collector dissipation
Conditions
G-E Short
C-E Short
TC = 25°C
PULSE
TC = 25°C
PULSE
TC = 25°C
(Note. 2)
(Note. 2)
Rating
600
±20
10
20
10
20
40
Unit
V
V
A
A
A
A
W
Rating
600
±20
10
20
39
600
10
Unit
V
V
A
A
W
V
A
BRAKE PART
Symbol
VCES
VGES
IC
I CM
PC (Note.3)
VRRM
I FM (Note.3)
Parameter
Collector-emitter voltage
Gate-emitter voltage
Collector Current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
Conditions
G-E Short
C-E Short
TC = 25°C
PULSE
TC = 25°C
Clamp diode part
Clamp diode part
(Note. 2)
CONVERTER PART
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Symbol
VRRM
Ea
IO
I FSM
I 2t
Parameter
Conditions
Repetitive peak reverse voltage
Recommended AC input voltage
3φ rectifying circuit
DC output current
Surge (non-repetitive) forward current 1/2 cycle at 60Hz, peak value, Non-repetitive
Value for one cycle of surge current
I2t for fusing
Rating
Unit
800
220
10
200
165
V
V
A
A
A2s
Rating
800
800
10
Unit
V
V
A
200
A
10
1
3
10
5
100
W
W
A
V
V
A/µs
Rating
Unit
–40 ~ +150
–40 ~ +125
–40 ~ +125
2500
1.47 ~ 1.96
120
°C
°C
°C
V
N·m
g
THYRISTOR PART
Symbol
VDRM
VRRM
IT(AV)
Parameter
Conditions
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Single-phase, half-wave 180° conduction
ITSM
Surge (non-repetitive)
on-state current
PGM
PG(AV)
IFGM
VFGM
VRGM
di/dt
Peak gate power dissipation
Average gate power dissipation
Peak gate forward current
Peak gate forward voltage
Peak gate reverse voltage
Critical rate of rise of on-state Current IG =100mA, VD=400V, dIG /dt=1A/µs
1/2 cycle at 60Hz, peak value Non-repetitive
COMMON RATING
Symbol
Tj
Tj
Tstg
Viso
—
—
Parameter
Junction temperature
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
Conditions
Inverter, brake, converter part
Thyristor part
AC 1 min.
Mounting M4 screw
Typical value
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
1
Unit
I CES
Collector cutoff current
VCE = VCES, V GE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 1.0mA, VCE = 10V
4.5
6
7.5
V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
2.15
—
—
—
30
—
—
—
—
—
—
0.03
—
—
0.5
2.8
—
1.0
0.9
0.2
—
120
300
200
300
2.8
110
—
3.1
4.9
µA
VGE = VGES , VCE = 0V
Tj = 25°C
Collector-emitter saturation voltage
IC = 10A, VGE = 15V
VCE(sat)
Tj = 150°C
Input capacitance
Cies
VCE = 10V
Output capacitance
Coes
VGE = 0V
Reverse transfer capacitance
Cres
Total gate charge
QG
VCC = 300V, IC = 10A, VGE = 15V
Turn-on delay time
t d(on)
VCC = 300V, IC = 10A
Turn-on rise time
tr
VGE1 = VGE2 = 15V
t d(off)
Turn-off delay time
RG = 63Ω
Turn-off fall time
tf
Resistive load
VEC(Note.1) Emitter-collector voltage
IE = 10A, VGE = 0V
t rr (Note.1) Reverse recovery time
IE = 10A, VGE = 0V
Qrr (Note.1) Reverse recovery charge
diE / dt = – 20A / µs
Rth(j-c)Q
IGBT part, Per 1/6 module
Thermal resistance
Rth(j-c)R
FWDi part, Per 1/6 module
I GES
Gate-emitter cutoff current
(Note.4)
mA
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µC
°C/W
°C/W
BRAKE PART
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Symbol
Parameter
Test conditions
Limits
Typ.
—
Max.
1
Unit
ICES
Collector cutoff current
VCE = VCES, VGE = 0V
Min.
—
VGE(th)
Gate-emitter threshold voltage
IC = 1.0mA, VCE = 10V
4.5
6
7.5
V
IGES
VGE = VGES, V CE = 0V
Tj = 25°C
Collector-emitter saturation voltage
IC = 10A, VGE = 15V
Tj = 150°C
Input capacitance
VCE = 10V
Output capacitance
VGE = 0V
Reverse transfer capacitance
Total gate charge
VCC = 300V, IC = 10A, VGE = 15V
Forward voltage drop
IF = 10A, Clamp diode part
IGBT part
Thermal resistance
Clamp diode part
—
—
—
—
—
—
—
—
—
—
—
2.1
2.15
—
—
—
30
—
—
—
0.5
2.8
—
1.0
0.9
0.2
—
2.8
3.2
5.0
µA
Min.
—
—
—
Limits
Typ.
—
—
—
Max.
8
1.5
3.1
VCE(sat)
Cies
Coes
Cres
QG
VFM
Rth(j-c)Q
Rth(j-c)R
Gate-emitter cutoff current
(Note.4)
mA
V
nF
nF
nF
nC
V
°C/W
°C/W
CONVERTER PART
Symbol
I RRM
V FM
Rth(j-c)
Parameter
Repetitive reverse current
Forward voltage drop
Thermal resistance
Test conditions
VR = VRRM, Tj = 150°C
IF = 10A
Per 1/6 module
Unit
mA
V
°C/W
Sep. 2000
MITSUBISHI IGBT MODULES
CM10AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
THYRISTOR PART
Symbol
IDRM
Parameter
Test conditions
Repetitive peak off-state current VD=800V
Repetitive peak reverse current VR=800V
IT =10A, instantaneous means
On-state voltage
IRRM
ITM
IGT
Gate trigger current
Gate trigger voltage
VD=6V, IT=1A
VD=6V, IT=1A
dv/dt
Critical rate of rise of off-state
Voltage
Tj=125°C, VD=540V, exp. waveform
IH
Rth(j-c)
Holding current
Thermal resistance
VGT
Min.
—
Limits
Typ.
—
Max.
1
—
—
—
—
1
1.45
mA
V
—
—
—
—
50
3
mA
V
500
—
—
V/µs
—
—
50
—
—
1.75
°C/W
Min.
—
—
Limits
Typ.
100
4000
Max.
—
—
Unit
mA
mA
THERMISTOR PART
Symbol
Parameter
Resistance
B Constant
RTH
B
Test conditions
TC = 25°C
Resistance at 25°C, 50°C
(Note.5)
Unit
kΩ
K
RESISTOR PART
Symbol
Parameter
Test conditions
Limits
Min.
—
—
Typ.
5.9
0.048
Max.
—
—
Min.
Limits
Typ.
Max.
—
0.05
—
Unit
www.BDTIC.com/MITSUBISHI
R
—
Resistance
Temperature coefficient
Measured between N-N1
mΩ
%/°C
COMMON RATING
Symbol
Rth(c-f)
Note. 1
2
3
4
5
Parameter
Contact thermal resistance
Test conditions
Case to fin, Thermal compound applied* 1 (1 module)
Unit
°C/W
IE, VEC, t rr, Q rr, di E/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating.
Junction temperature (Tj) should not increase beyond 150°C.
Pulse width and repetition rate should be such as to cause negligible temperature rise.
R 1 : Resistance at T1(K)
B = (InR1-InR2)/(1/T1-1/T2)
R 2 : Resistance at T2(K)
*1 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Sep. 2000