HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS 35A, 1200V, NPT Series N-Channel IGBT Features
... Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. ...
... Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. ...
AP1530
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
... Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use ...
NTF3055L108 - Power MOSFET 3.0 Amps, 60 Volts
... regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, includin ...
... regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, includin ...
Paper Title (use style: paper title) - IR@CSIR-CEERI
... Fig. 1. Typical current steering digital-to-analog converter architecture signal components, even for small output signals and will manifest itself as spurs in the frequency domain. In thermometer-coded array, each unit current source is connected to a switch controlled by the signal coming from the ...
... Fig. 1. Typical current steering digital-to-analog converter architecture signal components, even for small output signals and will manifest itself as spurs in the frequency domain. In thermometer-coded array, each unit current source is connected to a switch controlled by the signal coming from the ...
new approaches to the direct measurement of capacitance
... with the PSD method which requires amplification and detection of analogue signals. To display such measurements in digital form requires the addition of an A/D converter with consequent loss of accuracy. In the PSD method the magnitude of the signal to be displayed depends on the total gain of the ...
... with the PSD method which requires amplification and detection of analogue signals. To display such measurements in digital form requires the addition of an A/D converter with consequent loss of accuracy. In the PSD method the magnitude of the signal to be displayed depends on the total gain of the ...
EUP8054/8054X Standalone Linear Li-Ion Battery Charger With Thermal Regulation in ThinSOT
... be of interest to the user. For example, if a switching power supply operating in low current mode is connected in parallel with the battery, the average current being pulled out of the BAT pin is typically of more interest than the instantaneous current pulses. In such a case, a simple RC filter ca ...
... be of interest to the user. For example, if a switching power supply operating in low current mode is connected in parallel with the battery, the average current being pulled out of the BAT pin is typically of more interest than the instantaneous current pulses. In such a case, a simple RC filter ca ...
Pages 20
... Because of their crystal structure, they sometimes have very high values of internal polarization, giving very high effective dielectric constants. In this way, these materials are comparable with ferromagnetic materials. Above the Curie temperature, a change of domain structure occurs that results ...
... Because of their crystal structure, they sometimes have very high values of internal polarization, giving very high effective dielectric constants. In this way, these materials are comparable with ferromagnetic materials. Above the Curie temperature, a change of domain structure occurs that results ...
Small, Energy-Efficient, Off-line Regulator 30mW No
... Constant Voltage Operation MP156 acts as a fully-integrated regulator when used in the Buck topography, as shown in the typical application on page1. At the beginning of each cycle, the integrated MOSFET turns ON while the feedback voltage remains below the 2.5V reference voltage, which indicates in ...
... Constant Voltage Operation MP156 acts as a fully-integrated regulator when used in the Buck topography, as shown in the typical application on page1. At the beginning of each cycle, the integrated MOSFET turns ON while the feedback voltage remains below the 2.5V reference voltage, which indicates in ...
Heater / Filament Supplies
... considerably reduce valve lifespan and must be avoided. Running them at lower voltages will increase their lifespan but reduce their emission, although the grid curves and general performance remain much the same;- only the saturation current is reduced. Running heaters under-voltage is therefore pe ...
... considerably reduce valve lifespan and must be avoided. Running them at lower voltages will increase their lifespan but reduce their emission, although the grid curves and general performance remain much the same;- only the saturation current is reduced. Running heaters under-voltage is therefore pe ...
AN10289 LPC900 external crystal start-up Rev. 01 — 27 April 2004 Application note
... is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, o ...
... is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, o ...
LM2595 1.0 A, Step-Down Switching Regulator
... It allows the switching regulator circuit to be shut down using logic level signals, thus dropping the total input supply current to approximately 50 mA. The threshold voltage is typically 1.6 V. Applying a voltage above this value (up to +Vin) shuts the regulator off. If the voltage applied to this ...
... It allows the switching regulator circuit to be shut down using logic level signals, thus dropping the total input supply current to approximately 50 mA. The threshold voltage is typically 1.6 V. Applying a voltage above this value (up to +Vin) shuts the regulator off. If the voltage applied to this ...
−48-V ATCA Module Hot Swap Using the TPS2393 Application Note Jim Bird
... The most common technique for connecting the two power feeds is diode ORing, as shown in Figure 1. Diode ORing is simple, small, inexpensive, and prevents current flow between the two feeds as required by the ATCA spec. When also used on the high side ( −48VA RTN, −48VB_RTN ) current flow is prevent ...
... The most common technique for connecting the two power feeds is diode ORing, as shown in Figure 1. Diode ORing is simple, small, inexpensive, and prevents current flow between the two feeds as required by the ATCA spec. When also used on the high side ( −48VA RTN, −48VB_RTN ) current flow is prevent ...
PAM2320 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
GaAs RF Transistors - Purdue College of Engineering
... • Buffer layer : defect isolation, smooth surface creation. • 2DEG : result from the band gap difference between AlxGa1-xAs and GaAs A sheet of nearly-free electrons • The spacer layer : separates the 2DEG from ionized donors generated by n+ active layer. • Interaction decreases with increasing se ...
... • Buffer layer : defect isolation, smooth surface creation. • 2DEG : result from the band gap difference between AlxGa1-xAs and GaAs A sheet of nearly-free electrons • The spacer layer : separates the 2DEG from ionized donors generated by n+ active layer. • Interaction decreases with increasing se ...
DPA-Switch - akinoid.com
... rectifiers, and 30% in the magnetic devices. The remainder is distributed among other devices and circuit traces. Higher efficiencies of approximately 91% can be obtained when Schottky rectifiers are replaced by synchronous rectifiers, allowing lower voltage drops. The efficiency can be raised even highe ...
... rectifiers, and 30% in the magnetic devices. The remainder is distributed among other devices and circuit traces. Higher efficiencies of approximately 91% can be obtained when Schottky rectifiers are replaced by synchronous rectifiers, allowing lower voltage drops. The efficiency can be raised even highe ...
Tektronix Curve Tracers - University of Saskatchewan
... At the bottom right corner of the instrument you will find the power switch. Directly under the display are four knobs that control the focus, intensity, astigmatism and scale illumination of the display. To the immediate right of the display is the vertical current or volts/div knob. Depending upon ...
... At the bottom right corner of the instrument you will find the power switch. Directly under the display are four knobs that control the focus, intensity, astigmatism and scale illumination of the display. To the immediate right of the display is the vertical current or volts/div knob. Depending upon ...
LP38512-ADJ - Texas Instruments
... A ceramic capacitor with a minimum value of 10 µF is required at the output pin for loop stability. It must be located less than 1 cm from the device and connected directly to the output and ground pin using traces which have no other currents flowing through them. As long as the minimum of 10 µF ce ...
... A ceramic capacitor with a minimum value of 10 µF is required at the output pin for loop stability. It must be located less than 1 cm from the device and connected directly to the output and ground pin using traces which have no other currents flowing through them. As long as the minimum of 10 µF ce ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.