LT3592 - 500mA Wide Input Voltage Range Step
... but it also has a low threshold voltage (~0.7V) that allows it to interface to logic level control signals. Input Voltage Range ...
... but it also has a low threshold voltage (~0.7V) that allows it to interface to logic level control signals. Input Voltage Range ...
Understanding LDMOS device fundamentals
... Metal-Oxide-Semiconductor), have unique behaviors: semiconductor process and geometry dependent. These acronyms can be confusing, especially since the acronym LDMOS is a concatenation of acronyms that have been used to designate various aspects of the lateral device and often stands for lateral curr ...
... Metal-Oxide-Semiconductor), have unique behaviors: semiconductor process and geometry dependent. These acronyms can be confusing, especially since the acronym LDMOS is a concatenation of acronyms that have been used to designate various aspects of the lateral device and often stands for lateral curr ...
AP5004 PWM CONTROL 2.5A STEP-DOWN CONVERTER Description
... controller is internally clocked by a fixed 300KHz oscillator. When used as a converter, the AP5004’s pulse width varies in a range from 0% to 90%, according to the load current. The ripple voltage produced by the switching can easily be removed through a filter because the switching frequency remai ...
... controller is internally clocked by a fixed 300KHz oscillator. When used as a converter, the AP5004’s pulse width varies in a range from 0% to 90%, according to the load current. The ripple voltage produced by the switching can easily be removed through a filter because the switching frequency remai ...
TPS51117 Single Synchronous Step-Down
... Overcurrent trip point set input. Connect resistor from this pin to signal ground to set threshold for both overcurrent and negative overcurrent limit. ...
... Overcurrent trip point set input. Connect resistor from this pin to signal ground to set threshold for both overcurrent and negative overcurrent limit. ...
XLamp ML and MX Breakdown Voltage
... desired voltage level is reached or until a small amount (1 to 2 microamps) of leakage current flows. This small amount of leakage current is the point at which voltage breakdown is starting to occur for the LED device. Using a similar concept, each XLamp LED tested for this study was connected to a ...
... desired voltage level is reached or until a small amount (1 to 2 microamps) of leakage current flows. This small amount of leakage current is the point at which voltage breakdown is starting to occur for the LED device. Using a similar concept, each XLamp LED tested for this study was connected to a ...
AP1509 150KHz, 2A PWM BUCK DC/DC CONVERTER Description
... should be used in the board layout (One exception is the output (switch) pin, which should not have large areas of copper). Large areas of copper provide the best transfer of heat (lower thermal resistance) to the surrounding air, and moving air lowers the thermal resistance even further. Package th ...
... should be used in the board layout (One exception is the output (switch) pin, which should not have large areas of copper). Large areas of copper provide the best transfer of heat (lower thermal resistance) to the surrounding air, and moving air lowers the thermal resistance even further. Package th ...
AP1186
... to provide extremely low dropout voltages comparable to the PNP type without the disadvantage of the extra power dissipation due to the base current associated with PNP regulators. This is done by bringing out the control pin of the regulator that provides the base current to the power NPN and conne ...
... to provide extremely low dropout voltages comparable to the PNP type without the disadvantage of the extra power dissipation due to the base current associated with PNP regulators. This is done by bringing out the control pin of the regulator that provides the base current to the power NPN and conne ...
power electronics laboratory
... open, SCR is said to be forward biased. During this mode, junctions J1, J3 are forward biased but junction J2 is reverse biased. In this mode, a small current, called forward leakage current, flows. In case the forward voltage is increased, ten the reverse biased junction J2 will have an avalanche b ...
... open, SCR is said to be forward biased. During this mode, junctions J1, J3 are forward biased but junction J2 is reverse biased. In this mode, a small current, called forward leakage current, flows. In case the forward voltage is increased, ten the reverse biased junction J2 will have an avalanche b ...
High Temperature (>200 C) Isolated Gate Drive Topologies for
... and will turn on the JFET when ugs exceeds the threshold voltage Uth . Secondly, the positive JFET gate voltage should be kept below the threshold of the gate junction to avoid its destruction when no further current limitation is provided. An additional capacitor Cc and a diode Dc extends the circu ...
... and will turn on the JFET when ugs exceeds the threshold voltage Uth . Secondly, the positive JFET gate voltage should be kept below the threshold of the gate junction to avoid its destruction when no further current limitation is provided. An additional capacitor Cc and a diode Dc extends the circu ...
LT1511
... power dissipation. In normal operation, VBOOST = VCC + VBAT when switch is on. Maximum allowable VBOOST is 55V. UV (Pin 6): Undervoltage Lockout Input. The rising threshold is at 6.7V with a hysteresis of 0.5V. Switching stops in undervoltage lockout. When the supply (normally the wall adapter outpu ...
... power dissipation. In normal operation, VBOOST = VCC + VBAT when switch is on. Maximum allowable VBOOST is 55V. UV (Pin 6): Undervoltage Lockout Input. The rising threshold is at 6.7V with a hysteresis of 0.5V. Switching stops in undervoltage lockout. When the supply (normally the wall adapter outpu ...
Spin current and rectification in one-dimensional electronic systems Bernd Braunecker,
... to the asymmetry of the potential barrier dominates. The above example is based on a special form of the potential barrier in the wire and assumes that the magnetic field and chemical potentials are tuned in order to obtain the desired effect. As shown below, in the presence of strong repulsive elec ...
... to the asymmetry of the potential barrier dominates. The above example is based on a special form of the potential barrier in the wire and assumes that the magnetic field and chemical potentials are tuned in order to obtain the desired effect. As shown below, in the presence of strong repulsive elec ...
Electrical Transient Immunity for Power-over
... least severe in terms of rate of rise. They are caused by lightning strikes (direct strike or induced voltages and currents due to an indirect strike) and switching on power systems (also includes load changes and short circuit). The degree of severity of the transient can change depending on if the ...
... least severe in terms of rate of rise. They are caused by lightning strikes (direct strike or induced voltages and currents due to an indirect strike) and switching on power systems (also includes load changes and short circuit). The degree of severity of the transient can change depending on if the ...
optical density sensor
... is a diode that is forward biased when a light from a band of wavelengths reaches the P substrate. This bandwidth is determined by the material used to construct the P substrate. A phototransistor is a transistor that is biased when a bandwidth of light crosses the gate of the transistor. This bandw ...
... is a diode that is forward biased when a light from a band of wavelengths reaches the P substrate. This bandwidth is determined by the material used to construct the P substrate. A phototransistor is a transistor that is biased when a bandwidth of light crosses the gate of the transistor. This bandw ...
FSSD06 — SD/SDIO and MMC Two-Port Multiplexer Features Description
... The FSSD06 enables sharing the ASIC/baseband processor SDIO port(s) to two peripheral cards, providing bi-directional support for dual-voltage SD/SDIO or MMC cards available in the marketplace. Each SDIO port of the FSSD06 has its own supply rail, allowing peripheral cards with different supplies to ...
... The FSSD06 enables sharing the ASIC/baseband processor SDIO port(s) to two peripheral cards, providing bi-directional support for dual-voltage SD/SDIO or MMC cards available in the marketplace. Each SDIO port of the FSSD06 has its own supply rail, allowing peripheral cards with different supplies to ...
ZXMS6004FF Product Summary Features and Benefits
... VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 0.5A VIN = +5V, ID = 0.5A VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = +3V VIN = +5V ...
... VIN = +3V VIN = +5V VIN = +5V VIN = +3V, ID = 0.5A VIN = +5V, ID = 0.5A VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = 3V; TA = +25°C VIN = 5V; TA = +25°C VIN = +3V VIN = +5V ...
AP2552-53(A) - Diodes Incorporated
... systems where it is not possible to turn off the power switch before input power is removed. ...
... systems where it is not possible to turn off the power switch before input power is removed. ...
Physics 15b Lab 2: Current, Ohm`s Law
... Sketch I vs V for a Si diode for voltages from -1 V to 1 V. Label the regions corresponding to a reverse bias, a small forward bias, and a large forward bias. Bonus: Sketch V/I(V) as a function of V. If the diode were an ohmic device with resistance R, this plot would be a constant with a value equa ...
... Sketch I vs V for a Si diode for voltages from -1 V to 1 V. Label the regions corresponding to a reverse bias, a small forward bias, and a large forward bias. Bonus: Sketch V/I(V) as a function of V. If the diode were an ohmic device with resistance R, this plot would be a constant with a value equa ...
ZXCT1023EV1 User Guide Issue 1
... enables a typical accuracy of 3% for sense voltages of only 10mV, giving better tolerances for small value sense resistors necessary at higher currents. The wide input voltage range of 20V down to as low as 2.5V makes it suitable for a range of applications. It requires no additional components, thu ...
... enables a typical accuracy of 3% for sense voltages of only 10mV, giving better tolerances for small value sense resistors necessary at higher currents. The wide input voltage range of 20V down to as low as 2.5V makes it suitable for a range of applications. It requires no additional components, thu ...
MAX8822 Ultra-Efficient Negative Charge-Pump LED General Description
... Driver with Dual LDOs in 3mm x 3mm Thin QFN (VIN = 3.6V, VGND = 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) ...
... Driver with Dual LDOs in 3mm x 3mm Thin QFN (VIN = 3.6V, VGND = 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) ...
High-voltage Thyristors for HVDC and Other Applications
... Because of the high-voltage environment of thyristors in HVDC applications rated up to 500 kV it is necessary to electrically separate the trigger unit at ground potential from the thyristor at high-voltage potential. The trigger command for the thyristor is transmitted as a light pulse via a fiber- ...
... Because of the high-voltage environment of thyristors in HVDC applications rated up to 500 kV it is necessary to electrically separate the trigger unit at ground potential from the thyristor at high-voltage potential. The trigger command for the thyristor is transmitted as a light pulse via a fiber- ...
Combinations of Capacitors
... Capacitors store charge and energy. A battery must do work to move electrons from one plate to the other. The work done to move a small charge q across a voltage V is W = V·q. As the charge increases, V increases so the work to bring q increases. The energy (U) stored on a capacitor is given by ...
... Capacitors store charge and energy. A battery must do work to move electrons from one plate to the other. The work done to move a small charge q across a voltage V is W = V·q. As the charge increases, V increases so the work to bring q increases. The energy (U) stored on a capacitor is given by ...
Fabrication of Complex Circuit Using Electrochemical
... 50 µm transparency sheet cut by laser beam. This mask is bonded on printed circuit board of cross section 35 mm X 35 mm by a water insoluble glue Araldite (epoxy adhesive). For the analysis of the data the channel width of the circuit structure is measured with the help of photographs taken by using ...
... 50 µm transparency sheet cut by laser beam. This mask is bonded on printed circuit board of cross section 35 mm X 35 mm by a water insoluble glue Araldite (epoxy adhesive). For the analysis of the data the channel width of the circuit structure is measured with the help of photographs taken by using ...
KSA473 PNP Epitaxial Silicon Transistor KSA473 — PNP Epit axial Silicon
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
... Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard perfor ...
Josephson properties of basal-plane
... case, toward the utilization of such weak links as Josephsonlike elements in quantum device applications. This latter effort has been largely concerned with the study of YBa2Cu3O72d ~YBCO! tilt boundaries ~TBs! created by the union of two crystalline grains whose in-plane a – b orientations differ b ...
... case, toward the utilization of such weak links as Josephsonlike elements in quantum device applications. This latter effort has been largely concerned with the study of YBa2Cu3O72d ~YBCO! tilt boundaries ~TBs! created by the union of two crystalline grains whose in-plane a – b orientations differ b ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.