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Aalborg Universitet
Aalborg Universitet

... its corresponding capacitance value. Although the previous mentioned methods have been ver- ified by simulation and experimental work, errors, complexity, and cost increasing due to extra hardware are common shortcomings. Therefore, the developed technologies are rarely adopted in practical industry ...
AP9060 Description Pin Assignments
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... 1A of current from the PMIC to the load connected to the USB port. This makes AP9060 suitable for USB On-The-Go enabled devices. The AP9060 protection device is available in a low-profile W-DFN1114-3 package with a typical height of 0.8mm. ...
Electronic Builing Blocks
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... series or parallel combinations. The two descriptions are equivalent at any given frequency. Just don’t expect X to be −1/B or R to be 1/G for complex impedances, or that series RC circuits will have the same behavior as parallel ones over frequency. The linear relationship between AC voltage and cu ...
"Super" Junction Transistors with Current Gains of 88 and Ultra-fast
"Super" Junction Transistors with Current Gains of 88 and Ultra-fast

... NPN BJTs currently developed by GeneSiC in 1200 V – 10 kV ratings. The SiC SJTs are Gateoxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operating area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The current driven SJTs are cap ...
Linear Systems replaces discontinued Siliconix 2N4391
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... is implemented using a filter resistor of 220Ω and a capacitor. The corresponding corner frequency is below 5MHz. The supply voltages for the transimpedance amplifier are filtered by means of on-chip capacitors, thus avoiding the necessity to use an external supply filter capacitor. The input stage ...
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P–n diode



This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.
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