High-Efficiency, Low-Supply-Current, Compact, Step-Up DC-DC Converters General Description ____________________________Features
... switch allows the inductor current to vary between this peak limit and some lesser value. At light loads, the switching frequency is governed by a pair of one-shots that set a typical minimum off-time (1µs) and a typical maximum on-time (4µs). The switching frequency depends upon the load and the in ...
... switch allows the inductor current to vary between this peak limit and some lesser value. At light loads, the switching frequency is governed by a pair of one-shots that set a typical minimum off-time (1µs) and a typical maximum on-time (4µs). The switching frequency depends upon the load and the in ...
File - Tek finland oy
... capture of the Four-Point Probe Resistivity Measurement test is shown in Figure 3. The projects and tests included with the 4200A-SCS are configured to use either three or four SMUs (Source Measure Units). When using three SMUs, all three SMUs are set to Current Bias (voltmeter mode). However, one S ...
... capture of the Four-Point Probe Resistivity Measurement test is shown in Figure 3. The projects and tests included with the 4200A-SCS are configured to use either three or four SMUs (Source Measure Units). When using three SMUs, all three SMUs are set to Current Bias (voltmeter mode). However, one S ...
full text pdf
... $ t1-t2 – time interval immediately after switching on the power transistor; at the beginning diode D2 is biased in the conduction direction because the energy from the secondary winding leakage inductance is carried away; i2 still has a non-zero value. The moment the whole leakage inductance energy ...
... $ t1-t2 – time interval immediately after switching on the power transistor; at the beginning diode D2 is biased in the conduction direction because the energy from the secondary winding leakage inductance is carried away; i2 still has a non-zero value. The moment the whole leakage inductance energy ...
A Static Model for Electrolyte-Gated Organic Field-Effect Transistors Linköping University Post Print
... dielectric-semiconductor interface. In our model, the charge contribution is considered to be provided by electric double layer capacitance, which is nonlinear and voltage dependent. Moreover, a very important common point among different theories is the voltage dependent mobility, which has to be t ...
... dielectric-semiconductor interface. In our model, the charge contribution is considered to be provided by electric double layer capacitance, which is nonlinear and voltage dependent. Moreover, a very important common point among different theories is the voltage dependent mobility, which has to be t ...
PDF
... The gate drive used is an IR2130 with the high sides powered by bootstrap. There was previously a problem at start-up. In a switchmode converter, the low-side switch is always turned on eventually. In a motor drive commutated by Hall tracks, there is no guarantee that the low-side switch will ever t ...
... The gate drive used is an IR2130 with the high sides powered by bootstrap. There was previously a problem at start-up. In a switchmode converter, the low-side switch is always turned on eventually. In a motor drive commutated by Hall tracks, there is no guarantee that the low-side switch will ever t ...
FSBB15CH60F Motion SPM 3 Series FSBB15CH60F Motion SPM® 3 Series
... 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example : if CFOD = 33 nF, then tFO = ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 3.3 kresistor ...
... 5. VFO output pulse width should be determined by connecting an external capacitor (CFOD) between CFOD (pin 7) and COM (pin 2). (Example : if CFOD = 33 nF, then tFO = ms (typ.)) Please refer to the 2nd note 5 for calculation method. 6. Input signal is active-HIGH type. There is a 3.3 kresistor ...
IOSR Journal of Electrical and Electronics Engineering (IOSR-JEEE)
... regenerative signal for oscillation comes from ringing of transformer choke. The merits of the RCC can be attributed to blocking oscillation, automatically limiting input power when the output is overloaded. Moreover, the oscillation may naturally cease if the output is short-circuited. Even though ...
... regenerative signal for oscillation comes from ringing of transformer choke. The merits of the RCC can be attributed to blocking oscillation, automatically limiting input power when the output is overloaded. Moreover, the oscillation may naturally cease if the output is short-circuited. Even though ...
The Bidirectional Control Thyristor (BCT)
... In order to guarantee the separation of function of the component thyristors two aspects had to be considered: (i) suppressing unwanted carrier diffusion under dynamic conditions and (ii) limiting IGT and VGT to acceptable values at turn-on. To understand why it is so necessary to prevent charge car ...
... In order to guarantee the separation of function of the component thyristors two aspects had to be considered: (i) suppressing unwanted carrier diffusion under dynamic conditions and (ii) limiting IGT and VGT to acceptable values at turn-on. To understand why it is so necessary to prevent charge car ...
AL8812 Description Pin Assignments
... VF = Forward voltage drop of the output rectifier. The following power supply characteristics must be chosen: VIN - Nominal input voltage. VOUT - Desired output voltage, |VOUT| = 1.25 (1+R2/R1) IOUT - Desired output current. fmin - Minimum desired output switching frequency at the selected values of ...
... VF = Forward voltage drop of the output rectifier. The following power supply characteristics must be chosen: VIN - Nominal input voltage. VOUT - Desired output voltage, |VOUT| = 1.25 (1+R2/R1) IOUT - Desired output current. fmin - Minimum desired output switching frequency at the selected values of ...
A 0.9V 150MHz 10mW 4mm2 2-D Discrete Cosine Transform Core
... channel width of M4. This implies that XLCM is determined only by the transistor size ratio and independent of the power supply voltage, temperature, and process fluctuation. Figure 5 shows simulated variation of XLCM due to circuit condition changes and process fluctuation. The variation is within ...
... channel width of M4. This implies that XLCM is determined only by the transistor size ratio and independent of the power supply voltage, temperature, and process fluctuation. Figure 5 shows simulated variation of XLCM due to circuit condition changes and process fluctuation. The variation is within ...
Holding Dissapearance in RTD-based Quantizers
... Multiple-valued Logic (MVL) circuits are one of the most attractive applications of the Monostable-to-Multistable transition Logic (MML), and they are on the basis of advanced circuits for communications. The operation of such quantizer has two steps: sampling and holding. Once the quantizer samples ...
... Multiple-valued Logic (MVL) circuits are one of the most attractive applications of the Monostable-to-Multistable transition Logic (MML), and they are on the basis of advanced circuits for communications. The operation of such quantizer has two steps: sampling and holding. Once the quantizer samples ...
A New Single-Phase Soft-Switching Power Factor Correction
... switching (ZVS), zero-current switching (ZCS), zero-voltage transition (ZVT), and zero-current transition (ZCT). ZVS and ZCS provides a SS, but ZVT and ZCT techniques are advanced, so switching power loss can be completely destroyed or is diverted to entry or exit [10]. In the converter submitted in ...
... switching (ZVS), zero-current switching (ZCS), zero-voltage transition (ZVT), and zero-current transition (ZCT). ZVS and ZCS provides a SS, but ZVT and ZCT techniques are advanced, so switching power loss can be completely destroyed or is diverted to entry or exit [10]. In the converter submitted in ...
Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low
... called snubber circuit. Note that the value of the capacitor increases as a function of the load current as shown in fig. 13. Failed to keep on As a zero-crossing phototriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from keeping on If the spike potential exceeds the inhibit vol ...
... called snubber circuit. Note that the value of the capacitor increases as a function of the load current as shown in fig. 13. Failed to keep on As a zero-crossing phototriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from keeping on If the spike potential exceeds the inhibit vol ...
Effects of pulse-length and emitter area on virtual cathode formation
... can be seen in Refs. 10–12. Second, it is possible that this is also due to a transient effect due to the fact that initially the pulse does not extend across the anode–cathode gap and subsequently more charge might be pushed towards the front end of the beam 共this aspect will be discussed later in ...
... can be seen in Refs. 10–12. Second, it is possible that this is also due to a transient effect due to the fact that initially the pulse does not extend across the anode–cathode gap and subsequently more charge might be pushed towards the front end of the beam 共this aspect will be discussed later in ...
BD9873CP-V5
... P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in following chart, the P/N junction functions as a parasitic diode when GND > (P ...
... P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in following chart, the P/N junction functions as a parasitic diode when GND > (P ...
Surface DC Voltmeter Model SVM2 Quick Start Instructions Surface
... grounded metal sheet is brought into contact with a charged insulator, the surface voltage of the insulator will drop to zero even though the surface charge remains on the insulator. (If the grounded sheet is then pulled away, the surface of the insulator will return to its previous voltage.) To res ...
... grounded metal sheet is brought into contact with a charged insulator, the surface voltage of the insulator will drop to zero even though the surface charge remains on the insulator. (If the grounded sheet is then pulled away, the surface of the insulator will return to its previous voltage.) To res ...
P–n diode
This article provides a more detailed explanation of p–n diode behavior than that found in the articles p–n junction or diode.A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, detection of radio signals, emitting light and detecting light.