Download NTF3055L108 - Power MOSFET 3.0 Amps, 60 Volts

NTF3055L108,
NVF3055L108
Power MOSFET
3.0 A, 60 V, Logic Level, N−Channel
SOT−223
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
www.onsemi.com
3.0 A, 60 V
RDS(on) = 120 mW
Features
• NVF Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
N−Channel
D
Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
VGS
± 15
± 20
Vdc
Vpk
ID
ID
3.0
1.4
9.0
Apk
PD
2.1
1.3
0.014
Watts
Watts
W/°C
TJ, Tstg
−55
to 175
°C
EAS
74
mJ
RqJA
RqJA
72.3
114
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current
− Continuous @ TA = 25°C (Note 1)
− Continuous @ TA = 100°C (Note 2)
− Single Pulse (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc)
Thermal Resistance
−Junction−to−Ambient (Note 1)
−Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
1
July, 2016 − Rev. 9
SOT−223
CASE 318E
STYLE 3
2
3
MARKING DIAGRAM
Adc
IDM
AYW
3055L = Device Code
3055LG
A
= Assembly Location
G
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
°C/W
TL
1
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 oz. (Cu. Area 0.272 in2).
© Semiconductor Components Industries, LLC, 2016
4
1
Gate
2
3
Drain
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTF3055L108/D
NTF3055L108, NVF3055L108
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
60
−
68
68
−
−
−
−
−
−
1.0
10
−
−
± 100
1.0
−
1.68
4.6
2.0
−
−
92
120
−
0.290
0.250
0.43
−
gfs
−
5.7
−
Mhos
Ciss
−
313
440
pF
Coss
−
112
160
Crss
−
40
60
td(on)
−
11
25
tr
−
35
70
td(off)
−
22
45
tf
−
27
60
QT
−
7.6
15
Q1
−
1.4
−
Q2
−
4.0
−
−
−
0.87
0.72
1.0
−
trr
−
35
−
ta
−
21
−
tb
−
14
−
QRR
−
0.044
−
OFF CHARACTERISTICS
V(BR)DSS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current
Vdc
mAdc
IDSS
(VGS = ± 15 Vdc, VDS = 0 Vdc)
IGSS
mV/°C
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 1.5 Adc)
RDS(on)
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 5.0 Vdc, ID = 3.0 Adc)
(VGS = 5.0 Vdc, ID = 1.5 Adc, TJ = 150°C)
VDS(on)
Forward Transconductance (Note 3)
(VDS = 7.0 Vdc, ID = 3.0 Adc)
Vdc
mV/°C
mW
Vdc
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = 25 Vdc, VGS = 0 V,
f = 1.0 MHz)
Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 3.0 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W) (Note 3)
Fall Time
Gate Charge
(VDS = 48 Vdc, ID = 3.0 Adc,
VGS = 5.0 Vdc) (Note 3)
ns
nC
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc,
TJ = 150°C) (Note 3)
Reverse Recovery Time
(IS = 3.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
VSD
Vdc
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTF3055L108, NVF3055L108
TYPICAL ELECTRICAL CHARACTERISTICS
6
6
5
VDS > = 10 V
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
VGS = 3.4 V
VGS = 3.5 V
VGS = 4.5 V
4
3
VGS = 6 V
2
VGS = 10 V
VGS = 3.2 V
VGS = 3 V
VGS = 2.8 V
1
VGS = 2.5 V
5
4
3
TJ = 100°C
2
TJ = 25°C
1
TJ = −55°C
0
0
0.5
0
1.5
1
2
2.5
1
3
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.12
TJ = 25°C
0.08
TJ = −55°C
0.06
0.04
0.02
0
2
1
3
4
5
6
ID, DRAIN CURRENT (AMPS)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 100°C
0.1
3.5
4
4.5
5
VGS = 10 V
0.14
TJ = 100°C
0.12
0.1
TJ = 25°C
0.08
0.06
TJ = −55°C
0.04
0.02
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
2
VGS = 0 V
ID = 1.5 A
VGS = 5 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
3
0.16
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
2.5
Figure 2. Transfer Characteristics
0.16
0.14
2
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
VGS = 5 V
1.5
1.6
1.4
1.2
1
TJ = 150°C
1000
100
TJ = 100°C
10
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
60
NTF3055L108, NVF3055L108
1000
C, CAPACITANCE (pF)
VGS = 0 V
VDS = 0 V
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
TJ = 25°C
Ciss
800
600
Crss
Ciss
400
Coss
200
Crss
0
10
5 VGS 0 VDS 5
10
15
20
25
Q1
Q2
3
2
1
ID = 3 A
TJ = 25°C
0
0
1
2
3
4
5
7
6
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
8
3.2
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
VGS
4
Qg, TOTAL GATE CHARGE (nC)
VDS = 30 V
ID = 3 A
VGS = 5 V
100
tr
tf
td(off)
10
td(on)
1
10
100
2
1.6
1.2
0.8
0.4
0
0.54
0.58
0.62 0.66
0.7
0.74 0.78 0.82 0.86 0.9
Figure 10. Diode Forward Voltage vs. Current
1 ms
10 ms
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
10
1000
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1
0.001
0.1
2.4
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
100 ms
0.01
VGS = 0 V
TJ = 25°C
2.8
RG, GATE RESISTANCE (W)
10
ID, DRAIN CURRENT (AMPS)
QT
5
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
1000
1
6
80
ID = 7 A
70
60
50
40
30
20
10
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
175
NTF3055L108, NVF3055L108
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
TYPICAL ELECTRICAL CHARACTERISTICS
100
D = 0.5
10
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
1000 / Tape & Reel
NVF3055L108T1G
SOT−223 (TO−261)
(Pb−Free)
Device
1000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NTF3055L108, NVF3055L108
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
q
L
STYLE 3:
PIN 1.
2.
3.
4.
L1
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
−
GATE
0°
DRAIN
SOURCE
DRAIN
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTF3055L108/D