FJP13009 High Voltage Fast-Switching NPN Power Transistor FJP13009 High V
... This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I24 ...
... This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I24 ...
2SB1707
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
QST5
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
US6T5
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
Transistors - SFA Physics and Astronomy
... Individually, each of these transistors is operating in class B mode, active only for one-half of the input waveform cycle. Together, however, they function as a team to produce an output waveform identical in shape to the input waveform. ...
... Individually, each of these transistors is operating in class B mode, active only for one-half of the input waveform cycle. Together, however, they function as a team to produce an output waveform identical in shape to the input waveform. ...
hw11
... applied to the MOSFET to “bias” it in the saturation region of operation. The transconductance gm (defined as the change in drain current induced by a change in gate voltage) of the transistor is an important parameter for amplifier applications; a larger value of gm is desirable for higher amplifie ...
... applied to the MOSFET to “bias” it in the saturation region of operation. The transconductance gm (defined as the change in drain current induced by a change in gate voltage) of the transistor is an important parameter for amplifier applications; a larger value of gm is desirable for higher amplifie ...
Bio-Electronics for Scientists 1
... Hz) which reach their instantaneous peak values at one third of a cycle from each other. This makes it possible to produce a rotating magnetic field in an electric motor. • Three-phase systems have a neutral wire. A neutral wire allows the three-phase system to use a higher voltage while still suppo ...
... Hz) which reach their instantaneous peak values at one third of a cycle from each other. This makes it possible to produce a rotating magnetic field in an electric motor. • Three-phase systems have a neutral wire. A neutral wire allows the three-phase system to use a higher voltage while still suppo ...
LATCHES AND FILP FLOPS
... When VCE reaches a sufficiently high voltage, the reverse-biased base-collector junction goes into breakdown; and the collector current IC increases rapidly as indicted by the part of the curve to the right of point C. A transistor should never be operated in this breakdown region. Cutoff Region Whe ...
... When VCE reaches a sufficiently high voltage, the reverse-biased base-collector junction goes into breakdown; and the collector current IC increases rapidly as indicted by the part of the curve to the right of point C. A transistor should never be operated in this breakdown region. Cutoff Region Whe ...
NSS60201LT1G
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any partic ...
TO-3 Internal Schematic Diagram Absolute Maximum Ratings
... Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual pro ...
... Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual pro ...
Chapter-4
... of free electrons in the material. Pure germanium and pure silicon crystals have relatively free electrons. If however, carefully controlled amount of impurities are added , the number of free electrons, and consequently the conductivity , is increased. When certain other impurities are introduced a ...
... of free electrons in the material. Pure germanium and pure silicon crystals have relatively free electrons. If however, carefully controlled amount of impurities are added , the number of free electrons, and consequently the conductivity , is increased. When certain other impurities are introduced a ...
NZT660/NZT660A PNP Low Saturation Transistor NZT 660
... NZT660/NZT660A PNP Low Saturation Transistor • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. ...
... NZT660/NZT660A PNP Low Saturation Transistor • These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. ...
Document
... The diagram shows an op amp with the connections to the dual voltage power supply omitted. All the voltages are relative to the earth wire of the power supply. The maximum output voltage of the op amp is 15 V. ...
... The diagram shows an op amp with the connections to the dual voltage power supply omitted. All the voltages are relative to the earth wire of the power supply. The maximum output voltage of the op amp is 15 V. ...
CONSTRUCTING A VARIABLE POWER SUPPLY UNIT
... waveform is known as ripple, and is often noted on the specification sheet of an electronic device. The next section of the power supply unit will control the output of the device so that it goes from 0 to 15 volts. Resistors and transistors are used to vary the voltage. Transistors are most often u ...
... waveform is known as ripple, and is often noted on the specification sheet of an electronic device. The next section of the power supply unit will control the output of the device so that it goes from 0 to 15 volts. Resistors and transistors are used to vary the voltage. Transistors are most often u ...
Lecture 36
... moving to the left, from the p to the n side, so this is a reverse current. Avalanche breakdown This occurs because the electrons and holes undergoing the drift current are strongly accelerated under reverse bias, since the potential across the junction much increased. The energy of an electron or h ...
... moving to the left, from the p to the n side, so this is a reverse current. Avalanche breakdown This occurs because the electrons and holes undergoing the drift current are strongly accelerated under reverse bias, since the potential across the junction much increased. The energy of an electron or h ...
Physics 160 Lecture 6
... The collector is more positive than the emitter (by at least a few tenths of a volt at “saturation,” saturation, but usually much more). The base-emitter junction is forward biased, with the base about 1 diode drop (~0.6 to 0.7 V) higher than the emitter during normal operation (for currents of a fe ...
... The collector is more positive than the emitter (by at least a few tenths of a volt at “saturation,” saturation, but usually much more). The base-emitter junction is forward biased, with the base about 1 diode drop (~0.6 to 0.7 V) higher than the emitter during normal operation (for currents of a fe ...
File
... terminal of the op-amp. The negative feedback resistor gives the relation between output and the current Vo = IRref Switches were implemented as follows, a) Inverters: Inverters were implemented using the NMOS, PMOS pairs of the CD4007 IC. We used 2 ICs because there were four switches to be made. T ...
... terminal of the op-amp. The negative feedback resistor gives the relation between output and the current Vo = IRref Switches were implemented as follows, a) Inverters: Inverters were implemented using the NMOS, PMOS pairs of the CD4007 IC. We used 2 ICs because there were four switches to be made. T ...
lab4a - inst.eecs.berkeley.edu
... 2) Set VIN such that VOUT is 5V. Does the value match what you estimated from your prelab? 3) Increase VIN by 0.1V, estimate the change in current, and calculate the transconductance, gm = ID/VGS, and the voltage gain, AV = VOUT/VIN, at this bias point. Are they consistent with your prelab? Make ...
... 2) Set VIN such that VOUT is 5V. Does the value match what you estimated from your prelab? 3) Increase VIN by 0.1V, estimate the change in current, and calculate the transconductance, gm = ID/VGS, and the voltage gain, AV = VOUT/VIN, at this bias point. Are they consistent with your prelab? Make ...
1 β iC 2N2222 2N3904 IS (at 20 Degrees Celsius
... the base input (node “B”) and set its output to deliver a 10KHz. sine wave with a peak amplitude less than 0.5 volt. (Remember, this is an AMPLIFIER - DON’T OVERDRIVE IT) The input coupling capacitor reactance should be negligible when compared to the input impedance of the amplifier. (Xc < Rin /10) ...
... the base input (node “B”) and set its output to deliver a 10KHz. sine wave with a peak amplitude less than 0.5 volt. (Remember, this is an AMPLIFIER - DON’T OVERDRIVE IT) The input coupling capacitor reactance should be negligible when compared to the input impedance of the amplifier. (Xc < Rin /10) ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.