Download NZT660/NZT660A PNP Low Saturation Transistor NZT 660

NZT660/NZT660A
PNP Low Saturation Transistor
• These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
4
3
2
1
SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* T =25°C unless otherwise noted
a
Symbol
Parameter
NZT660
NZT660A
Units
VCEO
Collector-Emitter Voltage
60
60
V
VCBO
Collector-Base Voltage
80
60
V
VEBO
Emitter-Base Voltage
IC
Collector Current
TJ, TSTG
Operating and Storage Junction Temperature Range
5
5
V
3
3
A
- 55 ~ +150
- 55 ~ +150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Symbol
Ta = 25°C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCEO
Collector-Emitter Breakdown Voltage
IC = 10mA
BVCBO
Collector-Base Breakdown Voltage
IC = 100µA
BVEBO
Emitter-Base Breakdown Voltage
IE = 100µA
ICBO
Collector-Base Cutoff Current
VCB = 30V
VCB = 30V, TA = 100°C
100
10
nA
µA
IEBO
Emitter-Base Cutoff Current
VEB = 4V
100
nA
NZT660
NZT660A
60
V
80
60
V
V
5
V
On Characteristics *
hFE
DC Current Gain
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
NZT660
NZT660A
70
100
250
80
25
300
550
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©2005 Fairchild Semiconductor Corporation
NZT660/NZT660A Rev. C3
1
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NZT660/NZT660A PNP Low Saturation Transistor
April 2005
Symbol
Ta = 25°C unless otherwise noted (Continued)
Parameter
Test Conditions
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
Min.
Typ.
Max.
Units
300
550
500
mV
mV
mV
1.25
V
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
IC = 1A, IB = 100mA
VBE(on)
Base-Emitter On Voltage
IC = 1A, VCE = 2V
1
V
45
pF
NZT660
NZT660A
Small Signal Characteristics
Cobo
Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
fT
Transition Frequency
IC = 100mA, VCE = 5V, f = 100MHz
75
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD
Total Device Dissipation
RθJA
Thermal Resistance, Junction to Ambient
NZT660/NZT660A
Units
2
W
62.5
°C/W
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NZT660/NZT660A PNP Low Saturation Transistor
Electrical Characteristics
1.4
Figure 2. Base-Emitter On Voltage
vs Collector Current
VBEON- BASE-EMITTER ON VOLTAGE (V)
β = 10
VBESAT -BASE-EMITTER SATURATION VOLTAGE(V)
Figure 1. Base-Emitter Saturation Voltage
vs Collector Current
β = 10
β = 10
ββ==10
10
1.2
1
- 40°C
0.8
0.6
25°C
0.4
125°C
0.2
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
0.7
Vce = 2.0V
1.4
1.2
1
- 40°C
0.8
0.6
25°C
0.4
125°C
0.2
0.0001
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
400
10
ββ==10
ββ==10
10
350
0.6
10
Figure 4. Input/Output Capacitance
vs Reverse Bias Voltage
CAPACITANCE (pf)
0.8
125°C
0.5
25°C
0.4
0.3
- 40°C
0.2
f V=ce1.0MHz
= 2.0V
Cobo
300
250
200
150
C ibo
100
50
0.1
0
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
0
0.1
10
0.5 1
10 20
V CE - COLLECTOR VOLTAGE (V)
50
100
Figure 5. Current Gain vs Collector Current
1000
125°C
900
H FE - CURRENT GAIN
β = 10
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Figure 3. Collector-Emitter Saturation Voltage
vs Collector Current
1.6
Vce = 2.0V
800
700
600
25°C
500
400
300
- 40°C
200
100
0
0.0001
0.001
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
10
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NZT660/NZT660A Rev. C3
3
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NZT660/NZT660A PNP Low Saturation Transistor
Typical Performance Characteristics
NZT660/NZT660A PNP Low Saturation Transistor
Mechanical Dimensions
3.00 ±0.10
4.60 ±0.25
6.50 ±0.20
(0.89)
(0.95)
(0.46)
1.60 ±0.20
2.30 TYP
7.00 ±0.30
(0.60)
0.70 ±0.10
(0.95)
+0.04
0.06 –0.02
(0.60)
3.50 ±0.20
1.75 ±0.20
MAX1.80
0.65 ±0.20
0.08MAX
SOT-223
°
10
+0.10
0.25 –0.05
0°~
Dimensions in Millimeters
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
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NZT660/NZT660A Rev. C3
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NZT660/NZT660A PNP Low Saturation Transistor
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