6-channel BTL driver for CD players
... Various mute function and corresponding driver and regulator operating conditions ...
... Various mute function and corresponding driver and regulator operating conditions ...
H5P2 Source Follower Large Signal
... See fig below Here the source labeled VDD is the power supply. Although the source follower has no voltage gain (actually a small loss) it has power gain: it presents a very high resistance to the signal source so it takes no power from the source, but it can drive a low resistance load. Also, becau ...
... See fig below Here the source labeled VDD is the power supply. Although the source follower has no voltage gain (actually a small loss) it has power gain: it presents a very high resistance to the signal source so it takes no power from the source, but it can drive a low resistance load. Also, becau ...
SB07-03P DATA SHEET 30V, 700mA Rectifi er SANYO Semiconductors
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
Electronic fluorescent lamp ballast
... For example, for the 220V RMS mains: Peak voltage = (220V x √2) + 15% +10% = 394V It would seem that devices with a BVCES of 400V could be used - however this would mean that the devices would have a BVCEO less than the voltage applied by the mains, which is not advisable. Hence the transistors shou ...
... For example, for the 220V RMS mains: Peak voltage = (220V x √2) + 15% +10% = 394V It would seem that devices with a BVCES of 400V could be used - however this would mean that the devices would have a BVCEO less than the voltage applied by the mains, which is not advisable. Hence the transistors shou ...
Electronic fluorescent lamp ballast
... For example, for the 220V RMS mains: Peak voltage = (220V x √2) + 15% +10% = 394V It would seem that devices with a BVCES of 400V could be used - however this would mean that the devices would have a BVCEO less than the voltage applied by the mains, which is not advisable. Hence the transistors shou ...
... For example, for the 220V RMS mains: Peak voltage = (220V x √2) + 15% +10% = 394V It would seem that devices with a BVCES of 400V could be used - however this would mean that the devices would have a BVCEO less than the voltage applied by the mains, which is not advisable. Hence the transistors shou ...
FETs, the curve trace,r and PSpice simulation -
... Purpose: To use a curve tracer to obtain and study V-I traces for a JFET which is a good device for this lab work and will be used with the tracer. To simulate MOSFET digital circuits with PSpice. Equipment: Tektronix 577 curve tracer. Spec Sheets: Obtain a copy of MPF102 and 2N7000 spec (specificat ...
... Purpose: To use a curve tracer to obtain and study V-I traces for a JFET which is a good device for this lab work and will be used with the tracer. To simulate MOSFET digital circuits with PSpice. Equipment: Tektronix 577 curve tracer. Spec Sheets: Obtain a copy of MPF102 and 2N7000 spec (specificat ...
Varistors FBMOV Datasheet
... The Littelfuse FBMOV Series thermally protected and non-fragmenting varistor represents a new development in circuit protection. It consists of a 40kA varistor building block (MOV) with an integral thermally activated element designed to open in the event of overheating due to abnormal over-voltage, ...
... The Littelfuse FBMOV Series thermally protected and non-fragmenting varistor represents a new development in circuit protection. It consists of a 40kA varistor building block (MOV) with an integral thermally activated element designed to open in the event of overheating due to abnormal over-voltage, ...
Download T3100 Datasheet
... on generators, bus bars or other distribution systems. The T3100 will signal when the voltage is out of limits for a preset time period. The T3100 consists of two circuits, one circuit for overvoltage and one for undervoltage monitoring. Each circuit has individual settings for voltage levels and ti ...
... on generators, bus bars or other distribution systems. The T3100 will signal when the voltage is out of limits for a preset time period. The T3100 consists of two circuits, one circuit for overvoltage and one for undervoltage monitoring. Each circuit has individual settings for voltage levels and ti ...
170M____
... The only controlled copy of this BIF document is the electronic read-only version located on the Bussmann Network Drive. All other copies of this document are by definition uncontrolled. This bulletin is intended to clearly present comprehensive product data and provide technical information that wi ...
... The only controlled copy of this BIF document is the electronic read-only version located on the Bussmann Network Drive. All other copies of this document are by definition uncontrolled. This bulletin is intended to clearly present comprehensive product data and provide technical information that wi ...
Single Schottky Barrier Diode, 90 V, 200 mA
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
DATA SHEET PMBT4401 NPN switching transistor
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
321LAB#3
... Determination of carrier type and majority carrier concentration The Hall effect is widely used for determining a) type of conductivity of a semiconductor (n or p), and b) the majority carrier concentration. As one can see from Eq. (1), the slope of dependency VH vs. B is defined, in particular, by ...
... Determination of carrier type and majority carrier concentration The Hall effect is widely used for determining a) type of conductivity of a semiconductor (n or p), and b) the majority carrier concentration. As one can see from Eq. (1), the slope of dependency VH vs. B is defined, in particular, by ...
Low Capacitance Diode Array for ESD Protection in Four Data Lines
... The NUP4304MR6 is able to protect up to four data lines against transient overvoltage conditions by driving them to a fixed reference point for clamping purposes. The steering diodes will be forward biased whenever the voltage on the protected line exceeds the reference voltage (Vf or Vcc+Vf). The d ...
... The NUP4304MR6 is able to protect up to four data lines against transient overvoltage conditions by driving them to a fixed reference point for clamping purposes. The steering diodes will be forward biased whenever the voltage on the protected line exceeds the reference voltage (Vf or Vcc+Vf). The d ...
Diagnostic Radiology III
... voltage than normal transformers • Does not electrically isolate primary from secondary circuit ...
... voltage than normal transformers • Does not electrically isolate primary from secondary circuit ...
a AN-397 APPLICATION NOTE •
... This triggering mechanism can occur due to supply transients, or electrostatic discharges shunted to a supply rail. Unlike the case of I/O triggering, latch-up can occur anywhere on the die and is not limited to the vicinity of the external power connections or I/O pins. The susceptibility to power ...
... This triggering mechanism can occur due to supply transients, or electrostatic discharges shunted to a supply rail. Unlike the case of I/O triggering, latch-up can occur anywhere on the die and is not limited to the vicinity of the external power connections or I/O pins. The susceptibility to power ...
Alternator
... warning lamp, transistors, and field coil to ground, causing the lamp to illuminate. ...
... warning lamp, transistors, and field coil to ground, causing the lamp to illuminate. ...
WP224 - 负偏置温度不稳定性(NBTI) 对 90 nm PMOS 的影响
... to verify that the designs are fully robust through the inevitable PMOS gate threshold voltage shifts that occur during the operating life of the product [Ref 1]. During qualification testing, the device was operated at voltages and temperatures well beyond the absolute maximum ratings in order to a ...
... to verify that the designs are fully robust through the inevitable PMOS gate threshold voltage shifts that occur during the operating life of the product [Ref 1]. During qualification testing, the device was operated at voltages and temperatures well beyond the absolute maximum ratings in order to a ...
IIR - WDM Next Generation Optical Networking
... •Reliability •Shelf controlled in any conditions ...
... •Reliability •Shelf controlled in any conditions ...
Superconducting single-electron push–pull amplifier stage
... This amplifier stage can either be used as an electrometer to detect charge, or as a voltage amplifier. Used as an electrometer, superconducting SET’s have higher charge sensitivities than normal SET’s.3 A charge sensitivity of 10⫺4 e/ 冑Hz at 10 Hz is typically achieved.4 When using such an electrom ...
... This amplifier stage can either be used as an electrometer to detect charge, or as a voltage amplifier. Used as an electrometer, superconducting SET’s have higher charge sensitivities than normal SET’s.3 A charge sensitivity of 10⫺4 e/ 冑Hz at 10 Hz is typically achieved.4 When using such an electrom ...
DATA SHEET BFS20W NPN medium frequency transistor
... infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter ...
... infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.