DATA SHEET PMBT4403 PNP switching transistor
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
70-BC User Manual
... Fuzzface (with Germanium NKT275 transistors) and the later “Dallas Arbiter” Fuzzface. (with silicon BC183L and BC108-C transistors) The nastier, more distorted, BC108-C Fuzzface came out around 1970, and it inspired both the circuit and the name of your new Fulltone 70 pedal. In my 20’s, I spent muc ...
... Fuzzface (with Germanium NKT275 transistors) and the later “Dallas Arbiter” Fuzzface. (with silicon BC183L and BC108-C transistors) The nastier, more distorted, BC108-C Fuzzface came out around 1970, and it inspired both the circuit and the name of your new Fulltone 70 pedal. In my 20’s, I spent muc ...
DATA SHEET PMBT5551 NPN high-voltage transistor
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
DATA SHEET PBSS5320D 20 V low V PNP transistor
... infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter ...
... infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter ...
RF3928 280W GaN WIDEBAND PULSED POWER AMPLIFIER Features
... The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achi ...
... The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band pulsed radar, Air Traffic Control and Surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achi ...
Basic Electronics to Test Fixtures
... and dielectric constants work into the formula. To get up to date on capacitors, I remember my High School electronics teacher talking about capacitors and how large a Farad was. In his world of paper and plastic capacitors, a one Farad capacitor would "fill this whole room". Today, a one Farad capa ...
... and dielectric constants work into the formula. To get up to date on capacitors, I remember my High School electronics teacher talking about capacitors and how large a Farad was. In his world of paper and plastic capacitors, a one Farad capacitor would "fill this whole room". Today, a one Farad capa ...
Bipolar Junction Transistors
... where ICBO = minority collector current ICBO is usually so small that it can be ignored, except in high power transistors and in high temperature environments. ...
... where ICBO = minority collector current ICBO is usually so small that it can be ignored, except in high power transistors and in high temperature environments. ...
lecture3
... Chapter Two Fast-Recovery Diodes Reverse recovery time< 5 us ( Low). Used in DC-DC and DC-AC converter circuit (high speed applications). Current rating : From less than 1 Ampere to several hundreds of Amperes. Voltage rating 50 v to 3 kV. Platinum or gold. ...
... Chapter Two Fast-Recovery Diodes Reverse recovery time< 5 us ( Low). Used in DC-DC and DC-AC converter circuit (high speed applications). Current rating : From less than 1 Ampere to several hundreds of Amperes. Voltage rating 50 v to 3 kV. Platinum or gold. ...
DATA SHEET PMBT2369 NPN switching transistor
... specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, mili ...
... specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, mili ...
Chap. 41: Conduction of electricity in solids
... Negatively charge gate Repel el. in n-channel down into substrate Wider depletion zone between p and n n-channel width reduced Larger resistance (off realized) ...
... Negatively charge gate Repel el. in n-channel down into substrate Wider depletion zone between p and n n-channel width reduced Larger resistance (off realized) ...
Part III – the workshop
... 2. Below are the diagrams of the first integrated circuit (pic. in Part I) created by Jack Kilby. a. Label the picture on the left with components and compare Kilby’s IC and diagram to yours. Use and / but / however. ...
... 2. Below are the diagrams of the first integrated circuit (pic. in Part I) created by Jack Kilby. a. Label the picture on the left with components and compare Kilby’s IC and diagram to yours. Use and / but / however. ...
Semiconductor Photodetectors
... APDs have greater sensitivity for a given material – detection of weaker signals over longer distances of fiber at a higher bit rate. APDs have higher dark current. – PIN diode may have greater sensitivity for long wavelength detection than an APD. PIN diodes are easier to fabricate. – Hence produce ...
... APDs have greater sensitivity for a given material – detection of weaker signals over longer distances of fiber at a higher bit rate. APDs have higher dark current. – PIN diode may have greater sensitivity for long wavelength detection than an APD. PIN diodes are easier to fabricate. – Hence produce ...
Basic Electronics
... When temperature is high, the electrons of the outermost shell take the thermal energy and become free. So conductivity increases with temperature. Hence with increase in temperature, the A-B curve would shift towards left i.e. curve would rise sharply and the breakdown voltage would also decrease ...
... When temperature is high, the electrons of the outermost shell take the thermal energy and become free. So conductivity increases with temperature. Hence with increase in temperature, the A-B curve would shift towards left i.e. curve would rise sharply and the breakdown voltage would also decrease ...
Lab3
... To study the behavior of single stage CE and CB amplifiers. To design and study the characteristics of the cascode amplifier using BJTs. To determine the upper 3dB frequency of the CE, CB and the cascode BJT amplifiers. INTRODUCTION AND THEORY ...
... To study the behavior of single stage CE and CB amplifiers. To design and study the characteristics of the cascode amplifier using BJTs. To determine the upper 3dB frequency of the CE, CB and the cascode BJT amplifiers. INTRODUCTION AND THEORY ...
Lecture4 - UCSB ECE
... Decode exclusivity (else short-circuit!) Poor high voltage levels if NMOS-only Body effect ...
... Decode exclusivity (else short-circuit!) Poor high voltage levels if NMOS-only Body effect ...
Things you should know about LED`s and
... tries to keep the input pins at the same voltage independent of the light input. It does this by adjusting Vout which sources or draws current from the input capacitance through the feedback resistor. This RC time constant limits the speed at which the amplifier can respond. Ex: If the photodiode ha ...
... tries to keep the input pins at the same voltage independent of the light input. It does this by adjusting Vout which sources or draws current from the input capacitance through the feedback resistor. This RC time constant limits the speed at which the amplifier can respond. Ex: If the photodiode ha ...
Poster presentations given for ARCS
... setting. The anodization process starts with constant current until the voltage setpoint is reached. The process then switches to a constant voltage mode. The process is stopped when the current appears to reach a steady state. Film thickness and index of refraction is measured at a single point of ...
... setting. The anodization process starts with constant current until the voltage setpoint is reached. The process then switches to a constant voltage mode. The process is stopped when the current appears to reach a steady state. Film thickness and index of refraction is measured at a single point of ...
Constant Current Regulator LED Circuit Enhanced for
... and DN05088. It runs on 120 VAC and uses several special design features to optimize the dimming performance. The LED voltages should be between 60 and 68 volts per string during operation. While the circuits in DN05084 and DN05088 are also TRIAC dimmable, this circuit suppresses the “flash-on” phen ...
... and DN05088. It runs on 120 VAC and uses several special design features to optimize the dimming performance. The LED voltages should be between 60 and 68 volts per string during operation. While the circuits in DN05084 and DN05088 are also TRIAC dimmable, this circuit suppresses the “flash-on” phen ...
Single Schottky Barrier Diode, 30 V, 1 A
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.