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pdf - Jan Verspecht BVBA
pdf - Jan Verspecht BVBA

Monolithically integrated 10Gbit/s silicon modulator with driver in
Monolithically integrated 10Gbit/s silicon modulator with driver in

... The driver contains a differential amplifier (T1-T3, P1, R1-R4) for pre-amplification. The input common-mode voltage at In+/In- is ≈1.25V. A common-mode feedback circuit (CMFB) is implemented to set the optimal operation point. The input data signal is overlaid to the input common-mode voltage and c ...
LM79XX.PDF
LM79XX.PDF

Photodiodes and other Light Sensors
Photodiodes and other Light Sensors

... electronics. There are really just two photocell applications – light measurement, and the reception of modulated light. When we measure light we may be measuring its intensity, or we may simply be detecting if it is present. We have seen that photodiodes have photocurrent and photoresistors have co ...
FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode
FDC6392S 20V Integrated P-Channel PowerTrench MOSFET and Schottky Diode

... 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. ...
Comparative Analysis of 150W RF VDMOS Transistors
Comparative Analysis of 150W RF VDMOS Transistors

... choice of the starting epitaxial wafer in three areas: 1) drain-source turn-on resistance RDS(on), 2) operating voltage VDD(op), and 3) ruggedness and long-term reliability of the device. RDS(on) increases with V(BR)DSS, and decreases with increasing die size. Figure 1 depicts the typical normalized ...
US5U30
US5U30

... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
When to Use Open-Collector and Relay Outputs
When to Use Open-Collector and Relay Outputs

... The Open-Collector Output is a transistor circuit configuration used in a wide variety of electronic designs including many integrated circuits (ICs). Three parts make up a transistor: the emitter, the base and the collector. These three parts form two distinct junctions, the emitter-base junction a ...
Document
Document

... Differential-mode buck-boost inverters have merits such as reduced switch number, ability to provide voltages higher or lower than the input voltage magnitude, improved efficiency, reduced cost and size, and increased power density, especially in low-power applications. There are five buck-boost inv ...
a high-efficiency mosfet transformerless inverter for
a high-efficiency mosfet transformerless inverter for

... In order to achieve high system efficiency and minimize the system common-mode (cm) voltage, the secondary stage of the nonisolated pv microinverter requires a high efficiency transformerless inverter In recent years, there have been quite a few new transformerless PV inverters topologies, which eli ...
Circuits Simulation
Circuits Simulation

MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M
MOC3010M, MOC3011M, MOC3012M, MOC3020M, MOC3021M

... 1. The mercury wetted relay provides a high speed repeated pulse to the D.U.T. 2. 100x scope probes are used, to allow high speeds and voltages. 3. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then removing the current. The variab ...
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ee120 lab prjct 1, 94

TIP142T
TIP142T

... Complementary power Darlington transistors Features ...
Electronics IEEE Projects
Electronics IEEE Projects

... through the diode. The diode remains "in conduction" until the current through it drops below a value characteristic for the device, called the holding current. Below this value, the diode switches back to its high-resistance (nonconducting) state. This behavior is bidirectional, meaning typically t ...
LA5724MC
LA5724MC

... R1 and R2 are resistors to set the output voltage. When the large resistance value is set, the error of set voltage increases due to the VOS pin current. The output voltage may also increases due to the leak current of switching transistor at light load. In consequence, it is essential to see R1 and ...
Low-Power and High Speed High-to-Low Level Shifter
Low-Power and High Speed High-to-Low Level Shifter

... In case when signals at the input for second stage have high frequencies and high voltage levels, the output signal level which drives the third stage with thin-oxide input transistors, can exceed the low supply voltage level, thus being potential threat to those transistors. To solve this problem t ...
QS5U21
QS5U21

... otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. ...
Reliability in CMOS IC Design: Physical Failure Mechanisms and
Reliability in CMOS IC Design: Physical Failure Mechanisms and

... terms how a foundry is able to control them with processing design and with design rules. It is not the intent of this description to provide people with a comprehensive treatment of the physical failure mechanisms, but it is intended that this document will answer some common questions that designe ...
80VIN/80VOUT, Constant Voltage, Constant
80VIN/80VOUT, Constant Voltage, Constant

... and supercaps. Its 4.5V to 80V input voltage range makes it ideal for a wide variety of applications, including automotive, industrial and architectural lighting. The LT3956 uses an internal N-channel MOSFET and can drive up to eighteen 350mA white LEDs from a nominal 12V input, delivering in excess ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)

... consumption is also very important because of the increased in packaging density and cooling costs as well as potential reliability problems. Thus, power efficiency has increased importance, to meet the performance requirements of VLSI.The scaling of bulk CMOS, in fact faces significant challenges i ...
Power Quality Conditioner with Series-Parallel
Power Quality Conditioner with Series-Parallel

... Power Quality Conditioner (UPQC), allowing harmonic suppression and sag/swell compensation of the input voltage. In addition, reactive power compensation and harmonic suppression of the input current are also carried out, resulting in an effective power factor correction. Two different operation mod ...
Duality
Duality

... Its dual should force current to flow from the reference ground to the node that is shared by the current source and R1, the dual of Ra. ...
Single Diode, 600 V, 10 A
Single Diode, 600 V, 10 A

... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
Product Data Sheet01/10/2005
Product Data Sheet01/10/2005

... These ratings represent the maximum operable values for this two-channel device. ...
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Transistor



A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.
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