TS19452CS RLG Datasheet
... switching cycle causes high-current spikes in the LED string. Therefore, connecting a small capacitor CO(~100nF) is recommended to bypass these spikes. Using an ultra-fast rectifier diode for D1 is recommended to achieve high efficiency and reduce the risk of false triggering of the current sense co ...
... switching cycle causes high-current spikes in the LED string. Therefore, connecting a small capacitor CO(~100nF) is recommended to bypass these spikes. Using an ultra-fast rectifier diode for D1 is recommended to achieve high efficiency and reduce the risk of false triggering of the current sense co ...
B-TRAN - Ideal Power
... The same is true for the P impurity. This structure of Figure 1 “resistor” has been lightly doped with a P impurity, so it is P-. Figure 1 – “diode” This structure takes the P- resistor of Figure 1 “resistor” and adds a heavily doped layer of N material on one surface, making a P-/N+ diode. Due to d ...
... The same is true for the P impurity. This structure of Figure 1 “resistor” has been lightly doped with a P impurity, so it is P-. Figure 1 – “diode” This structure takes the P- resistor of Figure 1 “resistor” and adds a heavily doped layer of N material on one surface, making a P-/N+ diode. Due to d ...
103_appendix
... ultraviolet light, including wavelengths that may cause serious and painful eye injury even with short exposure. ...
... ultraviolet light, including wavelengths that may cause serious and painful eye injury even with short exposure. ...
TS19452_A12
... switching cycle causes high-current spikes in the LED string. Therefore, connecting a small capacitor CO(~100nF) is recommended to bypass these spikes. Using an ultra-fast rectifier diode for D1 is recommended to achieve high efficiency and reduce the risk of false triggering of the current sense co ...
... switching cycle causes high-current spikes in the LED string. Therefore, connecting a small capacitor CO(~100nF) is recommended to bypass these spikes. Using an ultra-fast rectifier diode for D1 is recommended to achieve high efficiency and reduce the risk of false triggering of the current sense co ...
5V Tolerance Techniques for CoolRunner-II Devices Summary
... the oxide. However, the gate oxide contains impurities, and these impurities can cause the charge to become trapped in the oxide. If enough of these particles become trapped in the oxide, the dielectric strength of the oxide is diminished, and the insulative properties of the oxide are compromised b ...
... the oxide. However, the gate oxide contains impurities, and these impurities can cause the charge to become trapped in the oxide. If enough of these particles become trapped in the oxide, the dielectric strength of the oxide is diminished, and the insulative properties of the oxide are compromised b ...
Datasheet - Littelfuse
... The NSA5.0AFT3G is designed to protect voltage sensitive components from high voltage, high energy transients. It has excellent clamping capability, high surge capability, low zener impedance and a fast response time. The NSA5.0AFT3G is ideally suited for use in communication systems, automotive, nu ...
... The NSA5.0AFT3G is designed to protect voltage sensitive components from high voltage, high energy transients. It has excellent clamping capability, high surge capability, low zener impedance and a fast response time. The NSA5.0AFT3G is ideally suited for use in communication systems, automotive, nu ...
EE 101 Lab 5 PCB sub
... create the 5 volts, we would find that the actual voltage would vary as the load changed and as the batteries gradually discharged. This sort of voltage variation would lead to incorrect operation of the microcontroller and other malfunctions. In order to avoid these performance issues, the required ...
... create the 5 volts, we would find that the actual voltage would vary as the load changed and as the batteries gradually discharged. This sort of voltage variation would lead to incorrect operation of the microcontroller and other malfunctions. In order to avoid these performance issues, the required ...
Input and Output Impedances of Resistive Circuits
... and we consider the input of a voltage measurement circuit (which could be an amplifier, filter, or other device that somehow measures or manipulates the signal), then the voltage divider equation tells us how accurately we are measuring the Thevinin voltage. We are now going to switch to the more g ...
... and we consider the input of a voltage measurement circuit (which could be an amplifier, filter, or other device that somehow measures or manipulates the signal), then the voltage divider equation tells us how accurately we are measuring the Thevinin voltage. We are now going to switch to the more g ...
hH Schottky Diode Voltage Doubler Application Note 956-4
... chips are needed. The shunt chip is a 5082-0009 detector. The series chip is a 5082-0023 mixer. Interchanging the chips does not affect performance. The circuit may also be assembled using ...
... chips are needed. The shunt chip is a 5082-0009 detector. The series chip is a 5082-0023 mixer. Interchanging the chips does not affect performance. The circuit may also be assembled using ...
mobile bug. errors and trouble shooting
... check the collector voltage. It should be high in the off state. If it is low, transistor is conducting and triggering the monostable even if its base voltage is low. Transistor is leaky and replace it. 3. Monostable IC 555 is used as a Monostable to give a short time high output once triggered. The ...
... check the collector voltage. It should be high in the off state. If it is low, transistor is conducting and triggering the monostable even if its base voltage is low. Transistor is leaky and replace it. 3. Monostable IC 555 is used as a Monostable to give a short time high output once triggered. The ...
FDS4685 40V P-Channel PowerTrench MOSFET
... 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.. a) 50°C/W when mounted on a 1 in2 pad of ...
... 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.. a) 50°C/W when mounted on a 1 in2 pad of ...
Abstract - 1000kv technologies
... packages and several fixed output voltages, making it useful in a wide range of applications. These regulators can provide local on-card regulation, eliminating the distribution problems associated with single point regulation. Each type employs internal current limiting, thermal shut-down and safe ...
... packages and several fixed output voltages, making it useful in a wide range of applications. These regulators can provide local on-card regulation, eliminating the distribution problems associated with single point regulation. Each type employs internal current limiting, thermal shut-down and safe ...
Using a Source Measure Unit as a Device Power Supply for
... SMUs are optimized for both speed and precision, repeatability, and they offer faster rise time and much lower measurement uncertainty than typical power supplies. Due to the combination of source and measurement into a single unit, many advantages are found during semiconductor testing. The high le ...
... SMUs are optimized for both speed and precision, repeatability, and they offer faster rise time and much lower measurement uncertainty than typical power supplies. Due to the combination of source and measurement into a single unit, many advantages are found during semiconductor testing. The high le ...
DATA SHEET PXTA14 NPN Darlington transistor
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
... not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environ ...
POWER ELECTRONICS NOTES 10ES45
... But io = 0 when the transistors from same arm i.e. Q( Q4 or Q2 Q3 conduct simultaneously. ...
... But io = 0 when the transistors from same arm i.e. Q( Q4 or Q2 Q3 conduct simultaneously. ...
15 - Auburn University
... Vth transistors are used when switching speed is very important, while low Vth transistors are used in speed sensitive paths. Further technology advances that use even thinner gate dielectrics have an additional leakage component because of current tunnelling through the extremely thin gate dielectr ...
... Vth transistors are used when switching speed is very important, while low Vth transistors are used in speed sensitive paths. Further technology advances that use even thinner gate dielectrics have an additional leakage component because of current tunnelling through the extremely thin gate dielectr ...
Solid-State RelayS
... • Highest open-circuit voltage VOC and short-circuit current ISC combination in the industry • Ambient operating temperature from –40 °C to +100 °C • Certified by key international safety regulatory agencies such as UL, CUL, and VDE • Through-hole and surface mount DIP-8 packages • Pure tin lea ...
... • Highest open-circuit voltage VOC and short-circuit current ISC combination in the industry • Ambient operating temperature from –40 °C to +100 °C • Certified by key international safety regulatory agencies such as UL, CUL, and VDE • Through-hole and surface mount DIP-8 packages • Pure tin lea ...
View - Toshiba America Electronic Components
... exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of break ...
... exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of break ...
How to select external components for DC/DC Converters
... With a small RB value of around 200Ω ~ 500Ω, the output current becomes higher but efficiency reduces at the light loads. With a high RB value of around 700Ω ~ 2kΩ, the output current becomes smaller but efficiency increases at the light loads. The RB value is calculated using the following equation ...
... With a small RB value of around 200Ω ~ 500Ω, the output current becomes higher but efficiency reduces at the light loads. With a high RB value of around 700Ω ~ 2kΩ, the output current becomes smaller but efficiency increases at the light loads. The RB value is calculated using the following equation ...
Single Diode, 600 V, 20 A
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
... "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportati ...
design and development of a public address audio amplifier
... bulky tubes to an extensive use of micro-chip solid-state semiconductors and from miniaturization to microminiaturization with yet seeming limitless possibilities unexplored. All these development have resulted in an evasive electronic design technique with a cardinal priority to maximize speed, eff ...
... bulky tubes to an extensive use of micro-chip solid-state semiconductors and from miniaturization to microminiaturization with yet seeming limitless possibilities unexplored. All these development have resulted in an evasive electronic design technique with a cardinal priority to maximize speed, eff ...
H5P2 Source Follower Large Signal
... See fig below Here the source labeled VDD is the power supply. Although the source follower has no voltage gain (actually a small loss) it has power gain: it presents a very high resistance to the signal source so it takes no power from the source, but it can drive a low resistance load. Also, becau ...
... See fig below Here the source labeled VDD is the power supply. Although the source follower has no voltage gain (actually a small loss) it has power gain: it presents a very high resistance to the signal source so it takes no power from the source, but it can drive a low resistance load. Also, becau ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.