Application Note
... Structurally, all thyristors consist of several alternating layers of opposite P and N silicon, with the exact structure varying with the particular kind of device. The load is applied across the multiple junctions and the trigger current is injected at one of them. The trigger current allows the lo ...
... Structurally, all thyristors consist of several alternating layers of opposite P and N silicon, with the exact structure varying with the particular kind of device. The load is applied across the multiple junctions and the trigger current is injected at one of them. The trigger current allows the lo ...
50 mA, 24 V, 3.2-uA Supply Current, Low
... microcontroller. Its ultra-low supply current maximizes efficiency at light loads, and its high input voltage range makes it suitable for supplies such as unconditioned solar panels. ...
... microcontroller. Its ultra-low supply current maximizes efficiency at light loads, and its high input voltage range makes it suitable for supplies such as unconditioned solar panels. ...
... Positive current should go into the plus side of the meter. In the current mode, the meter resistance is low so that the voltage drop across the meter will be small to minimize interference with the circuit. The digital meters can still be used to measure current when it is too small to be observed ...
Specification Status: Released PolyZen GENERAL DESCRIPTION
... the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0V). VINT Max is a survivabili ...
... the voltage (VIN-VOUT) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles and 24hours trip endurance at the specified voltage (VIN-VOUT) and current (IPTC). VINT Max testing is conducted using a "shorted" load (VOUT = 0V). VINT Max is a survivabili ...
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
... days. Current conveyors are operated on the current mode approach [7, 8], which considers the information flowing on time varying currents. Current conveyors overcome many disadvantages of voltage mode op-amp. 1. When signals are widely distributed as voltages, the parasitic capacitances are charged ...
... days. Current conveyors are operated on the current mode approach [7, 8], which considers the information flowing on time varying currents. Current conveyors overcome many disadvantages of voltage mode op-amp. 1. When signals are widely distributed as voltages, the parasitic capacitances are charged ...
POWER MOSFET THRU-HOLE (MO
... HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, suc ...
... HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, suc ...
LF412 Low Offset Low Drift Dual JFET Input Operational Amplifier
... the feedback pole by minimizing the capacitance from the input to ground. A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In ...
... the feedback pole by minimizing the capacitance from the input to ground. A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In ...
LF412 Low Offset, Low Drift Dual JFET Input Operational Amplifier
... the feedback pole by minimizing the capacitance from the input to ground. A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In ...
... the feedback pole by minimizing the capacitance from the input to ground. A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole. In ...
A Broadband HF Amplifier Using Low-Cost Power MOSFETs
... gain at dc and low frequencies can cause unwanted, low-frequency oscillation to occur in bipolar transistor RF amplifiers unless negative feedback is employed to prevent it. Low-frequency oscillation can damage bipolar transistors by causing excess power dissipation, leading to thermal runaway. ...
... gain at dc and low frequencies can cause unwanted, low-frequency oscillation to occur in bipolar transistor RF amplifiers unless negative feedback is employed to prevent it. Low-frequency oscillation can damage bipolar transistors by causing excess power dissipation, leading to thermal runaway. ...
LM1085 - HTC Korea
... Microsecond surge currents of 50A to 100A can be handled by the internal diode between the input and output pins of the device. In norminal operations it is difficult to get those values of surge currents even with the use of large output capacitances. If high value output capacitors are used, such ...
... Microsecond surge currents of 50A to 100A can be handled by the internal diode between the input and output pins of the device. In norminal operations it is difficult to get those values of surge currents even with the use of large output capacitances. If high value output capacitors are used, such ...
Experiment : 1
... The Zener diode is a p-n junction device designed to take full advantage of the Zener breakdown region. Once the reverse-bias potential reaches the Zener region, the ideal Zener diode is assumed to have fixed terminal voltage and zero internal resistance. All practical diodes some internal resistanc ...
... The Zener diode is a p-n junction device designed to take full advantage of the Zener breakdown region. Once the reverse-bias potential reaches the Zener region, the ideal Zener diode is assumed to have fixed terminal voltage and zero internal resistance. All practical diodes some internal resistanc ...
Amateur Extra Licensing Class
... The purpose of a "step-start" circuit in a high-voltage power supply is to allow the filter capacitors to charge gradually. This consists of inserting a resistor in the primary side of the transformer to limit the charge current on the capacitors at initial turn on. The series resistor is switched o ...
... The purpose of a "step-start" circuit in a high-voltage power supply is to allow the filter capacitors to charge gradually. This consists of inserting a resistor in the primary side of the transformer to limit the charge current on the capacitors at initial turn on. The series resistor is switched o ...
Distributed Amplifiers
... • 1) The negative resistance circuit does not affect the dc biasing of the circuit since it does not draw any dc current that passes through the TL components. • 2) The negative resistance circuit does not change the characteristic impedance of the TLs at lower frequencies, and, therefore, no gain v ...
... • 1) The negative resistance circuit does not affect the dc biasing of the circuit since it does not draw any dc current that passes through the TL components. • 2) The negative resistance circuit does not change the characteristic impedance of the TLs at lower frequencies, and, therefore, no gain v ...
RLP-‐1048 Heavy Duty AC to DC Power Supply
... end user. The product that is replaced or repaired under the provisions of this warranty, will be warranted for the remainder of the original warranty period, only, and will not extend into a new three year warranty period. The limited warranty does not extend to any DuraComm product which has been ...
... end user. The product that is replaced or repaired under the provisions of this warranty, will be warranted for the remainder of the original warranty period, only, and will not extend into a new three year warranty period. The limited warranty does not extend to any DuraComm product which has been ...
RUR1S1560S 15 A, 600 V, Ultrafast Diode Features
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
... and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
EUP7966 2A Low-Dropout Regulator with Enable
... suitable in the EUP7966 application circuit. The output capacitor must meet the requirement for minimum amount of capacitance and also have an ESR (Equivalent Series Resistance) value which is within a stable range (5mΩ to 200mΩ) Input Capacitor The input capacitor must be at least 10 µF ceramic, bu ...
... suitable in the EUP7966 application circuit. The output capacitor must meet the requirement for minimum amount of capacitance and also have an ESR (Equivalent Series Resistance) value which is within a stable range (5mΩ to 200mΩ) Input Capacitor The input capacitor must be at least 10 µF ceramic, bu ...
Managing Subthreshold Leakage in Charge
... SNDR of 8.1 dB compared with the conventional sigma-delta modulator on the same silicon chip. The AT-switch must use switch transistors with twice the channel width of the conventional switch transistor in order to maintain the conductance and to achieve the same bandwidth. Since the total charge in ...
... SNDR of 8.1 dB compared with the conventional sigma-delta modulator on the same silicon chip. The AT-switch must use switch transistors with twice the channel width of the conventional switch transistor in order to maintain the conductance and to achieve the same bandwidth. Since the total charge in ...
ISL9R860PF2 8 A, 600 V, STEALTH Diode —
... performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching ...
... performance in high frequency hard switched applications. The STEALTH™ family exhibits low reverse recovery current (Irr) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching ...
Minimization of Charge Sharing ~ Problems in Dynamic BiCMOS
... gives rise to two methods for minimizing the charge sharing voltage (1.5V). ...
... gives rise to two methods for minimizing the charge sharing voltage (1.5V). ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.