Design And Construction of Anti-Bag Snatching
									
... This sends a low pulse to trigger pin 2 of IC2 to make its output pin 3 high. Consequently, the alarm circuit built around IC UM3561 (IC3) gets the supply voltage at its pin 5. Its output is fed to the base of single-stage transistor amplifier BD139 (T1) that amplifies the generated alarm signal. A ...
                        	... This sends a low pulse to trigger pin 2 of IC2 to make its output pin 3 high. Consequently, the alarm circuit built around IC UM3561 (IC3) gets the supply voltage at its pin 5. Its output is fed to the base of single-stage transistor amplifier BD139 (T1) that amplifies the generated alarm signal. A ...
									MMDT4413 Features Mechanical Data
									
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
                        	... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
									MSC8122 and MSC8126 Power Circuit Design Recommendations
									
... Note: In the following sections, every reference to VDD also applies to VCCSYN. Note: Make sure that VDD is never greater than 0.8 V higher than VDDH during the power-up sequence. If the VDD – VDDH > 0.8 V, current can flow from the VDD supply to the VDDH supply through the ESD protection circuit. U ...
                        	... Note: In the following sections, every reference to VDD also applies to VCCSYN. Note: Make sure that VDD is never greater than 0.8 V higher than VDDH during the power-up sequence. If the VDD – VDDH > 0.8 V, current can flow from the VDD supply to the VDDH supply through the ESD protection circuit. U ...
									FR014H5JZ (14mΩ, -30V) High-Side Reverse Bias / Reverse Polarity Protector
									
... separated and look different. When this reverse bias protector is removed, VIN and VO merge, as shown in Figure 19 as VIN. This VIN is also the voltage applied to the load circuit. It can be seen that, with reverse bias protection, the voltage applied to the load and the current flowing into the loa ...
                        	... separated and look different. When this reverse bias protector is removed, VIN and VO merge, as shown in Figure 19 as VIN. This VIN is also the voltage applied to the load circuit. It can be seen that, with reverse bias protection, the voltage applied to the load and the current flowing into the loa ...
									Using the AEA 20/20 TDR
									
... Extra Credit (10 points): In either Multisim or your real circuit, add a 2k or larger potentiometer to each of the arms of the circuit (in series with each resistor). Tune the pots until you can turn LED1 on at 9V, LED2 on at 11V, and LED3 on at 13V. Read the values of resistance (the resistor + pot ...
                        	... Extra Credit (10 points): In either Multisim or your real circuit, add a 2k or larger potentiometer to each of the arms of the circuit (in series with each resistor). Tune the pots until you can turn LED1 on at 9V, LED2 on at 11V, and LED3 on at 13V. Read the values of resistance (the resistor + pot ...
									TVS Diode Array SPA SP724 Datasheet
									
... The SP724 is a quad array of transient voltage clamping circuits designed to suppress ESD and other transient overvoltage events. The SP724 is used to help protect sensitive digital or analog input circuits on data, signal, or control lines operating on power supplies up to 20VDC. The SP724 is compr ...
                        	... The SP724 is a quad array of transient voltage clamping circuits designed to suppress ESD and other transient overvoltage events. The SP724 is used to help protect sensitive digital or analog input circuits on data, signal, or control lines operating on power supplies up to 20VDC. The SP724 is compr ...
									ILD4180 1.8A DC/DC Step-Down Converter  LED Driver for Industrial Applications
									
... Enable Function: With the enable pin (EN) the device can be set in off-state reducing the current consumption to typ. 0.1µA. The enable function features an integrated pull down resistor which ensures that the IC is shut down and the power-switch is off in case the pin EN is not connected. Device Wa ...
                        	... Enable Function: With the enable pin (EN) the device can be set in off-state reducing the current consumption to typ. 0.1µA. The enable function features an integrated pull down resistor which ensures that the IC is shut down and the power-switch is off in case the pin EN is not connected. Device Wa ...
									Varistor Plus Single Layer Technology Varistor Glossary of Terms and Definitions Term
									
... The jump start transient results from the temporary application of an overvoltage in excess of the rated battery voltage. The circuit power supply may be subjected to a temporary over-voltage condition due to the voltage regulation failing or it may be deliberately generated when it becomes necessar ...
                        	... The jump start transient results from the temporary application of an overvoltage in excess of the rated battery voltage. The circuit power supply may be subjected to a temporary over-voltage condition due to the voltage regulation failing or it may be deliberately generated when it becomes necessar ...
									High negative differential resistance in silicon quantum dot metal
									
... negative differential resistance, as a result of the resonant tunneling and the very high peak-to-valley current ratios of 2240 under illumination and 390 in the dark at room temperature, which are much higher than the corresponding values of other Si tunneling devices. The peak voltage was reduced ...
                        	... negative differential resistance, as a result of the resonant tunneling and the very high peak-to-valley current ratios of 2240 under illumination and 390 in the dark at room temperature, which are much higher than the corresponding values of other Si tunneling devices. The peak voltage was reduced ...
									Precision Low Dropout Linear Controllers (Rev. A)
									
... The UC2832 series of precision linear regulators include all the control functions required in the design of very low dropout linear regulators. Additionally, they feature an innovative duty-ratio current limiting technique which provides peak load capability while limiting the average power dissipa ...
                        	... The UC2832 series of precision linear regulators include all the control functions required in the design of very low dropout linear regulators. Additionally, they feature an innovative duty-ratio current limiting technique which provides peak load capability while limiting the average power dissipa ...
									DMMT3904W Features Mechanical Data
									
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
                        	... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
									ZXCT1009 - Diodes Incorporated
									
... This design also uses the Diodes FZT789A high current Super-ß PNP as the switching transistor in the DC-DC step down converter and the FMMT451 as the drive NPN for the FZT789A. The circuit can be configured to charge up to four Li-Ion cells at a charge current of 1.25A. Charge can be terminated on m ...
                        	... This design also uses the Diodes FZT789A high current Super-ß PNP as the switching transistor in the DC-DC step down converter and the FMMT451 as the drive NPN for the FZT789A. The circuit can be configured to charge up to four Li-Ion cells at a charge current of 1.25A. Charge can be terminated on m ...
									FSAV430 Low Voltage 1.1GHz, 4-Channel, 2:1 Video Switch Features
									
... demultiplexer) video switch designed specifically for switching high definition YPbPr and computer RGB (up to UXGA) signals. The bandwidth of this device is 1.1GHz (typical) which allows signals to pass with minimal edge and phase distortion. Image integrity is maintained with low crosstalk, high of ...
                        	... demultiplexer) video switch designed specifically for switching high definition YPbPr and computer RGB (up to UXGA) signals. The bandwidth of this device is 1.1GHz (typical) which allows signals to pass with minimal edge and phase distortion. Image integrity is maintained with low crosstalk, high of ...
									An integrated heterojunction bipolar transistor cascode opto
									
... is shown in Fig. 7(a). This model is similar to the conventional charge control PSPICE large-signal model in the active region. Neglecting the base–collector capacitance, the OEM represented by this model is composed of a nonideal input mixing stage and an ideal amplifier stage with current amplific ...
                        	... is shown in Fig. 7(a). This model is similar to the conventional charge control PSPICE large-signal model in the active region. Neglecting the base–collector capacitance, the OEM represented by this model is composed of a nonideal input mixing stage and an ideal amplifier stage with current amplific ...
									14770 - DSpace at IIT Bombay
									
... converters is excessive switching losses. Fig. I(a) shows one o f the m m o n power conversion schemes based on hard switching. The reason for excessive Iowa during hard switching is the presence of either a non-zero voltage or curate at the time of device switching. Fig. I((b) (d) ) shows another s ...
                        	... converters is excessive switching losses. Fig. I(a) shows one o f the m m o n power conversion schemes based on hard switching. The reason for excessive Iowa during hard switching is the presence of either a non-zero voltage or curate at the time of device switching. Fig. I((b) (d) ) shows another s ...
									NTD24N06 - Power MOSFET, 60 V, 24 A, N-Channel
									
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent ...
                        	... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent ...
									FSDM311A Green Mode Fairchild Power Switch (FPS™) FSD M
									
... protection (OLP). There is a time delay while charging external capacitor CFB from 3V to 4.5V using an internal 5µA current source. This time delay prevents false triggering under transient conditions, but allows the protection mechanism to operate under true overload conditions. ...
                        	... protection (OLP). There is a time delay while charging external capacitor CFB from 3V to 4.5V using an internal 5µA current source. This time delay prevents false triggering under transient conditions, but allows the protection mechanism to operate under true overload conditions. ...
									Application Note
									
... Structurally, all thyristors consist of several alternating layers of opposite P and N silicon, with the exact structure varying with the particular kind of device. The load is applied across the multiple junctions and the trigger current is injected at one of them. The trigger current allows the lo ...
                        	... Structurally, all thyristors consist of several alternating layers of opposite P and N silicon, with the exact structure varying with the particular kind of device. The load is applied across the multiple junctions and the trigger current is injected at one of them. The trigger current allows the lo ...
Transistor
                        A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.