DC sweep
... 20) Affiliate cursor A1 with the trace of Ic/Ie by clicking on its icon with the LEFT mouse button (see below) 21) Affiliate cursor A2 with the trace of Vb by clicking on its icon with the RIGHT mouse button (see below) 22) Click on the actual Vb trace with the RIGHT mouse button to define the posit ...
... 20) Affiliate cursor A1 with the trace of Ic/Ie by clicking on its icon with the LEFT mouse button (see below) 21) Affiliate cursor A2 with the trace of Vb by clicking on its icon with the RIGHT mouse button (see below) 22) Click on the actual Vb trace with the RIGHT mouse button to define the posit ...
Low Power State Retention Technique for CMOS VLSI Design
... EDA. Single VT transistors are used in all designs to show the performance benefits and comparison of different techniques. The logical functionality of gates is verified for all input combinations. Static power is calculated for all input combinations during active and sleep (idle) mode as well as ...
... EDA. Single VT transistors are used in all designs to show the performance benefits and comparison of different techniques. The logical functionality of gates is verified for all input combinations. Static power is calculated for all input combinations during active and sleep (idle) mode as well as ...
EMI4184 数据资料DataSheet下载
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
PDF
... 1. Introduction Since the early demonstrations of silicon micro-ring resonant devices researchers have advanced the advantage these devices would have when integrating with existing silicon electronics [1]. For instance, silicon photonic chips have been proposed as optical backplanes for multi-core ...
... 1. Introduction Since the early demonstrations of silicon micro-ring resonant devices researchers have advanced the advantage these devices would have when integrating with existing silicon electronics [1]. For instance, silicon photonic chips have been proposed as optical backplanes for multi-core ...
LabF2005_2 - University of Kentucky College of Engineering
... instantaneous or memoryless systems. Nonlinear instantaneous systems are completely characterized by their transfer characteristic (TC), which describes the amplitude input-output relationship over a range of input amplitudes. Transfer characteristics for linear circuits can be expressed as an expli ...
... instantaneous or memoryless systems. Nonlinear instantaneous systems are completely characterized by their transfer characteristic (TC), which describes the amplitude input-output relationship over a range of input amplitudes. Transfer characteristics for linear circuits can be expressed as an expli ...
LFC789D25 - Texas Instruments
... loading on the output voltage. For the 2.5-V version, this SEN pin sinks a current of approximately 125 µA (including the currents through the internal resistor divider); this results in minimal loading on the output voltage. Although not tested, both of these controllers are designed with very low ...
... loading on the output voltage. For the 2.5-V version, this SEN pin sinks a current of approximately 125 µA (including the currents through the internal resistor divider); this results in minimal loading on the output voltage. Although not tested, both of these controllers are designed with very low ...
Lecture 9 - PIV, Filters and Multiple Diodes
... A capacitor is added in parallel with the load resistor of a half-wave rectifier to form a simple filter circuit. At first there is no charge across the capacitor ...
... A capacitor is added in parallel with the load resistor of a half-wave rectifier to form a simple filter circuit. At first there is no charge across the capacitor ...
Model 6514 Programmable Electrometer
... speed that are equal or superior to our earlier electrometers. The Model 6514’s built-in IEEE-488, RS-232, and digital I/O interfaces make it simple to configure fully automated, high speed systems for low-level testing. The 5½-digit Model 6514 is designed for applications that demand fast, yet pre ...
... speed that are equal or superior to our earlier electrometers. The Model 6514’s built-in IEEE-488, RS-232, and digital I/O interfaces make it simple to configure fully automated, high speed systems for low-level testing. The 5½-digit Model 6514 is designed for applications that demand fast, yet pre ...
Specification Status: Released PolyZen GENERAL DESCRIPTION
... This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as ”tripping”. A tripped ...
... This PTC layer is fully integrated into the device, and is electrically in series between VIN and the diode clamped VOUT. This advanced PTC layer responds to either extended diode heating or overcurrent events by transitioning from a low to high resistance state, also known as ”tripping”. A tripped ...
Temperature sensors and voltage references implemented in CMOS
... be applied to generate the basic signals for temperature sensors and voltage references [1]–[4]. In case of MOS transistors, the basic signals are derived from the threshold voltage and the mobility. In the bipolar transistors the base-emitter voltage and the saturation current is used for the extra ...
... be applied to generate the basic signals for temperature sensors and voltage references [1]–[4]. In case of MOS transistors, the basic signals are derived from the threshold voltage and the mobility. In the bipolar transistors the base-emitter voltage and the saturation current is used for the extra ...
fuse theory and operation
... ‘Fuse’ refers to a device that opens a circuit with fusible part, which is heated and severed by current flowing through it. The fusible part is also called the “Element”. When current flows in a fuse, heat is generated and its element temperature rises. If the current within(less or equal to) its c ...
... ‘Fuse’ refers to a device that opens a circuit with fusible part, which is heated and severed by current flowing through it. The fusible part is also called the “Element”. When current flows in a fuse, heat is generated and its element temperature rises. If the current within(less or equal to) its c ...
RA07H3340M
... To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following ...
... To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor. When an amplifier circuit around this module shows oscillation, the following ...
Electronic Devices, 9th Edition, Prentice Hall, 2011
... Rationale: This course develops a knowledge base in the fundamentals of electrical engineering, especially in the area of circuit analysis. The topics include circuit elements and Kirchhoff’s law, analysis of resistive circuits, network theorems, alternating current theory, three-phase circuits, ele ...
... Rationale: This course develops a knowledge base in the fundamentals of electrical engineering, especially in the area of circuit analysis. The topics include circuit elements and Kirchhoff’s law, analysis of resistive circuits, network theorems, alternating current theory, three-phase circuits, ele ...
CS5171BSTEVB CS5171/3 3.3 V to 5.0 V/ 400 mA Boost Regulator
... When the VCC voltage is below the minimum supply voltage, the VSW pin is in high impedance. Therefore, current conducts directly from the input power source to the output through the inductor and diode. Once VCC reaches approximately 1.5 V, the internal power switch briefly turns on. This is a part ...
... When the VCC voltage is below the minimum supply voltage, the VSW pin is in high impedance. Therefore, current conducts directly from the input power source to the output through the inductor and diode. Once VCC reaches approximately 1.5 V, the internal power switch briefly turns on. This is a part ...
AND8425 - Detection Voltage Selection Guidelines for Application of
... to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, ...
... to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, ...
Phys405-Chapter6
... unanimous opinion of German physicists that cathode rays were due to some then unknown etheric wave phenomenon. Thomson’s experiments showed that “...cathode rays carry a charge of negative electricity, are deflected by an electrostatic force as if they were negatively electrified, and are acted on ...
... unanimous opinion of German physicists that cathode rays were due to some then unknown etheric wave phenomenon. Thomson’s experiments showed that “...cathode rays carry a charge of negative electricity, are deflected by an electrostatic force as if they were negatively electrified, and are acted on ...
ITN 600-S
... The overload occurs when the primary current IP exceeds a trip level such that the fluxgate detector becomes completely saturated and, consequently, the transducer will switch from normal operation to overload mode. This trip level is guaranteed to be greater than 110 % of IPN DC and its actual valu ...
... The overload occurs when the primary current IP exceeds a trip level such that the fluxgate detector becomes completely saturated and, consequently, the transducer will switch from normal operation to overload mode. This trip level is guaranteed to be greater than 110 % of IPN DC and its actual valu ...
ACS754xCB-050 - Allegro MicroSystems
... Output Voltage versus Sampled Current Accuracy at 0 A and at Full-Scale Current ...
... Output Voltage versus Sampled Current Accuracy at 0 A and at Full-Scale Current ...
Transistor
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A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. It is composed of semiconductor material with at least three terminals for connection to an external circuit. A voltage or current applied to one pair of the transistor's terminals changes the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal. Today, some transistors are packaged individually, but many more are found embedded in integrated circuits.The transistor is the fundamental building block of modern electronic devices, and is ubiquitous in modern electronic systems. Following its development in 1947 by American physicists John Bardeen, Walter Brattain, and William Shockley, the transistor revolutionized the field of electronics, and paved the way for smaller and cheaper radios, calculators, and computers, among other things. The transistor is on the list of IEEE milestones in electronics, and the inventors were jointly awarded the 1956 Nobel Prize in Physics for their achievement.